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SMM4F24A-TR

STMicroelectronics

SMM4F24A-TR by STMicroelectronics

SMM4F24A-TR by STMicroelectronics is a unidirectional avalanche diode with 400W peak power dissipation, 28.01V breakdown voltage, and 38.9V clamping voltage. Ideal for transient suppression in electronics to protect against voltage spikes during operation.

Median Price

$0.625

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 395 parts In-Stock

1+ parts

$0.340

100+ parts

$0.235

1k+ parts

$0.183

10k+ parts

-

395

$0.340

$0.235

$0.183

-

DigiKey

USA . 14,087 parts In-Stock

1+ parts

$0.910

100+ parts

$0.368

1k+ parts

$0.255

10k+ parts

$0.207

14,087

$0.910

$0.368

$0.255

$0.207

Avnet

USA . 324,000 parts In-Stock

1+ parts

-

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-

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324,000

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-

-

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Arrow

USA . 96,000 parts In-Stock

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96,000

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-

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Verical

USA . 96,000 parts In-Stock

1+ parts

-

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96,000

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-

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Chip1Stop

Japan . 24,000 parts In-Stock

1+ parts

-

100+ parts

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24,000

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-

-

-

Distributors (In-Stock)

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Digiode

USA . 2,799 parts In-Stock

1+ parts

$0.145

100+ parts

-

1k+ parts

-

10k+ parts

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2,799

$0.145

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-

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Vyrian

USA . 3,210 parts In-Stock

1+ parts

$0.153

100+ parts

-

1k+ parts

-

10k+ parts

-

3,210

$0.153

-

-

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Anansix

USA . 2,232 parts In-Stock

1+ parts

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2,232

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 4,136 parts In-Stock

1+ parts

$0.138

100+ parts

-

1k+ parts

-

10k+ parts

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4,136

$0.138

-

-

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IDEA Electronic Components Group

UK . 180 parts In-Stock

1+ parts

$0.167

100+ parts

-

1k+ parts

$0.151

10k+ parts

-

180

$0.167

-

$0.151

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Component Stockers USA

USA . 78,417 parts In-Stock

1+ parts

$0.270

100+ parts

$0.220

1k+ parts

$0.210

10k+ parts

$0.180

78,417

$0.270

$0.220

$0.210

$0.180

MKK Technologies

India . 454 parts In-Stock

1+ parts

$0.315

100+ parts

-

1k+ parts

-

10k+ parts

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454

$0.315

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-

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DigiPath Technology Company

USA . 454 parts In-Stock

1+ parts

$0.315

100+ parts

-

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454

$0.315

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-

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Perfect Parts

USA . 204,015 parts In-Stock

1+ parts

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204,015

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Parana Technologies

USA . 1,663 parts In-Stock

1+ parts

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100+ parts

$0.200

1k+ parts

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10k+ parts

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1,663

-

$0.200

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Overview

Experience the superior quality and reliability of STMicroelectronics with the SMM4F24A-TR transient suppression device. This single-configured, surface-mount device offers unmatched protection against voltage spikes and surges, making it ideal for a wide range of applications. With a nominal breakdown voltage of 28.01V and a maximum clamping voltage of 38.9V, this diode ensures your sensitive electronics stay safe from harmful transients. Trust STMicroelectronics to deliver innovative solutions that provide peace of mind and value to customers.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transient suppression device.

Config: SINGLE

Simplified design and installation for ease of use.

Surface Mount: YES

Allows for easy and convenient mounting on PCBs.

Maximum Non Repetitive Peak Reverse Power Dissipation: 400 W

Can handle high power surges, ensuring reliable protection.

Nominal Breakdown Voltage: 28.01 V

Provides precise protection voltage for the circuit.

Minimum Breakdown Voltage: 26.6 V

Ensures consistent and reliable protection against overvoltage.

Maximum Operating Temperature: 175 °C

Can withstand high operating temperatures for versatile applications.

Minimum Operating Temperature: -55 °C

Suitable for use in a wide range of temperature environments.

Terminal Finish: Matte Tin (Sn)

Ensures good conductivity and corrosion resistance.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Specifically designed for transient suppression applications.

Technical Specifications

Transient Suppression Devices SMM4F24A-TR attributes and parameters. Explore more Transient Suppression Devices devices from STMicroelectronics

Specs

Maximum Breakdown Voltage:

29.4 V

Minimum Breakdown Voltage:

26.6 V

Nominal Breakdown Voltage:

28.01 V

Maximum Clamping Voltage:

38.9 V

Config:

SINGLE

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-222AA

JESD-30 Code:

R-PDSO-F2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

400 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

2.5 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

24 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SMM4F24A-TR Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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