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SMM4F8.5A-TR

STMicroelectronics

SMM4F8.5A-TR by STMicroelectronics

SMM4F8.5A-TR by STMicroelectronics is a unidirectional transient voltage suppressor diode designed for surface mount applications. It features a max reverse power dissipation of 400 W, breakdown voltage of 10 V, and operates b/w -55 °C to 175°C. Ideal for protecting sensitive electronics from voltage spikes.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,259 parts In-Stock

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3,259

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Vyrian

USA . 2,405 parts In-Stock

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2,405

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Anansix

USA . 645 parts In-Stock

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645

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,204 parts In-Stock

1+ parts

$0.048

100+ parts

-

1k+ parts

$0.043

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1,204

$0.048

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$0.043

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MKK Technologies

India . 1,230 parts In-Stock

1+ parts

$0.090

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1,230

$0.090

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DigiPath Technology Company

USA . 1,230 parts In-Stock

1+ parts

$0.090

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1,230

$0.090

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Kepictronics

USA . 85,000 parts In-Stock

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85,000

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Metaverse IC Inc.

Canada . 85,000 parts In-Stock

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85,000

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Corphita

USA . 4,418 parts In-Stock

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4,418

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Parana Technologies

USA . 718 parts In-Stock

1+ parts

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$0.057

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718

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$0.057

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Overview

Protect your designs with the SMM4F8.5A-TR from STMicroelectronics, a trusted leader in semiconductor innovation. This robust transient suppression device ensures superior reliability and performance across a wide range of applications, keeping sensitive electronics safe from voltage spikes. With its compact design and high-temperature resilience, it offers exceptional value, giving you peace of mind while enhancing the longevity of your products. Choose STMicroelectronics for quality you can trust!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material provides durability and resistance to mechanical stress, making it suitable for various applications.

Config: SINGLE

The single configuration maximizes design simplicity and minimizes footprint, ideal for space-constrained applications.

Surface Mount: YES

As a surface mount device, it facilitates automated assembly and helps to save board space, streamlining production.

Maximum Non Repetitive Peak Reverse Power Dissipation: 400 W

A high power dissipation capability allows it to handle transient events effectively without damage, enhancing reliability.

Nominal Breakdown Voltage: 10 V

The nominal breakdown voltage is well-suited for protecting sensitive electronic components in low-voltage applications.

Package Shape: RECTANGULAR

The rectangular package shape ensures efficient use of PCB space and optimal thermal performance.

No. of Terminals: 2

With only two terminals, this device simplifies circuit design and reduces the complexity of connections.

Package Style (Meter): SMALL OUTLINE

The small outline package style contributes to overall compactness and compatibility in various designs and layouts.

Maximum Operating Temperature: 175 °C

A high maximum operating temperature ensures reliable performance in demanding environments, extending operational life.

Minimum Operating Temperature: -55 °C

With a wide operating temperature range, this device is suitable for extreme environmental conditions, making it versatile.

Terminal Position: DUAL

The dual terminal position enhances flexibility in mounting options, ensuring adaptability in different layouts.

Maximum Power Dissipation: 2.5 W

A moderate maximum power dissipation rating enables adequate performance in various transient suppression scenarios.

Minimum Breakdown Voltage: 9.5 V

The minimum breakdown voltage guarantees effective clamping and protection for circuits that operate close to 10 V.

Maximum Breakdown Voltage: 10.5 V

The maximum breakdown voltage ensures that the device can handle peak voltages safely, preventing component damage.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

This specific diode type effectively suppresses voltage transients, ensuring the protection of connected components.

Technology: AVALANCHE

Avalanche technology ensures fast response and reliable clamping in transient situations, enhancing overall circuit protection.

Terminal Form: FLAT

Flat terminals are optimized for surface mounting, ensuring a solid connection and efficient thermal management.

Maximum Repetitive Peak Reverse Voltage: 8.5 V

This voltage rating offers a reliable limit for repetitive transients, ensuring consistent performance and protection.

Polarity: UNIDIRECTIONAL

Unidirectional polarity simplifies design requirements and targeted protection in specific circuit configurations.

Maximum Clamping Voltage: 14.4 V

The max clamping voltage helps ensure components are shielded from voltage spikes effectively, safeguarding sensitive electronics.

Diode Element Material: SILICON

The use of silicon ensures excellent thermal stability and performance, promoting long-term reliability in electronic applications.

Technical Specifications

Transient Suppression Devices SMM4F8.5A-TR attributes and parameters. Explore more Transient Suppression Devices devices from STMicroelectronics

Specs

Maximum Breakdown Voltage:

10.5 V

Minimum Breakdown Voltage:

9.5 V

Nominal Breakdown Voltage:

10 V

Maximum Clamping Voltage:

14.4 V

Config:

SINGLE

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-222AA

JESD-30 Code:

R-PDSO-F2

Maximum Non Repetitive Peak Reverse Power Dissipation:

400 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

2.5 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

8.5 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

SMM4F8.5A-TR Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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