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SMM4F13A-TR

STMicroelectronics

SMM4F13A-TR by STMicroelectronics

SMM4F13A-TR by STMicroelectronics is a unidirectional transient voltage suppressor diode designed for robust circuit protection. It features a breakdown voltage of 15 V, max power dissipation of 2.5 W, and operates b/w -55 °C to 175°C. Ideal for safeguarding sensitive electronics from voltage spikes.

Median Price

$0.180

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 18,090 parts In-Stock

1+ parts

-

100+ parts

$0.188

1k+ parts

$0.156

10k+ parts

$0.139

18,090

-

$0.188

$0.156

$0.139

Verical

USA . 18,090 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.173

18,090

-

-

-

$0.173

Distributors (In-Stock)

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Digiode

USA . 2,974 parts In-Stock

1+ parts

$0.140

100+ parts

-

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2,974

$0.140

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Vyrian

USA . 8,375 parts In-Stock

1+ parts

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8,375

-

-

-

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Anansix

USA . 2,823 parts In-Stock

1+ parts

-

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2,823

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Sensible Micro Corp

USA . 994 parts In-Stock

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994

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Chip Stock

USA . 929 parts In-Stock

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929

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-

Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,045 parts In-Stock

1+ parts

$0.027

100+ parts

-

1k+ parts

$0.024

10k+ parts

-

1,045

$0.027

-

$0.024

-

MKK Technologies

India . 672 parts In-Stock

1+ parts

$0.050

100+ parts

-

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672

$0.050

-

-

-

DigiPath Technology Company

USA . 672 parts In-Stock

1+ parts

$0.050

100+ parts

-

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672

$0.050

-

-

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Corphita

USA . 3,789 parts In-Stock

1+ parts

$0.132

100+ parts

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3,789

$0.132

-

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Advanced Electronics

New Zealand . 3,000 parts In-Stock

1+ parts

$0.201

100+ parts

$0.183

1k+ parts

$0.165

10k+ parts

-

3,000

$0.201

$0.183

$0.165

-

AZTECH Wire

Italy . 196 parts In-Stock

1+ parts

$8.880

100+ parts

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196

$8.880

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Kepictronics

USA . 90,000 parts In-Stock

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90,000

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iodParts Technologies Inc.

India . 80,910 parts In-Stock

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80,910

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Perfect Parts

USA . 23,579 parts In-Stock

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23,579

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A-Z Elektronik GmbH

Germany . 2,427 parts In-Stock

1+ parts

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2,427

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-

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Parana Technologies

USA . 2,096 parts In-Stock

1+ parts

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100+ parts

$0.032

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2,096

-

$0.032

-

-

Overview

Elevate your designs with the SMM4F13A-TR from STMicroelectronics, a leader in high-quality electronic components. This advanced transient suppression device ensures robust protection against voltage spikes, enhancing reliability across various applications—from automotive to consumer electronics. With unmatched performance and a compact surface-mount package, it delivers exceptional value, ensuring longevity and peace of mind for your projects. Trust in ST's commitment to innovation and quality for superior results.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy ensures durability and reliability in various environmental conditions.

Config: SINGLE

A single configuration simplifies the integration into circuits, making it easy to use.

Surface Mount: YES

Surface mount capability allows for compact designs, saving space on PCBs.

Maximum Non Repetitive Peak Reverse Power Dissipation: 400 W

High power dissipation capability handles transient surges effectively, ensuring device protection.

Nominal Breakdown Voltage: 15 V

The nominal breakdown voltage provides a reliable clamping action to protect sensitive components.

Package Shape: RECTANGULAR

The rectangular shape is well-suited for various mounting requirements and layouts.

No. of Terminals: 2

Two terminals facilitate easy installation and consistent electrical connection.

Package Style (Meter): SMALL OUTLINE

The small outline package style is ideal for high-density circuit boards.

Maximum Operating Temperature: 175 °C

A high maximum operating temperature makes this device suitable for harsh thermal environments.

Minimum Operating Temperature: -55 °C

Operating at low temperatures ensures reliability in extreme conditions.

Terminal Finish: Matte Tin (Sn)

Matte tin finish enhances solderability, improving assembly processes.

Terminal Position: DUAL

Dual terminal positioning aids in versatile layout designs.

Maximum Power Dissipation: 2.5 W

This level of power dissipation helps manage thermal performance in real-world applications.

Minimum Breakdown Voltage: 14.3 V

Ensures consistent performance under varying voltage conditions.

Maximum Time At Peak Reflow Temperature: 30 s

Optimized reflow time ensures solder joints are reliable while minimizing thermal stress.”

Peak Reflow Temperature: 260 °C

Supports higher soldering temperatures, making it suitable for modern assembly techniques.

Maximum Breakdown Voltage: 15.8 V

Provides robust protection for sensitive circuits from overvoltage conditions.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Specifically designed for transient voltage suppression, ensuring optimal device performance.

Technology: AVALANCHE

Avalanche technology provides fast response times, critical for voltage spike protection.

Terminal Form: FLAT

Flat terminal design is easier to mount and offers better thermal performance.

Maximum Repetitive Peak Reverse Voltage: 13 V

High peak reverse voltage handling prevents damage from transient voltages.

Polarity: UNIDIRECTIONAL

Unidirectional device simplifies circuit design and protection for DC applications.

Maximum Clamping Voltage: 21.5 V

The clamping voltage protects sensitive components from high voltage transients effectively.

Diode Element Material: SILICON

Silicon construction provides excellent electrical characteristics and long-term reliability.

Technical Specifications

Transient Suppression Devices SMM4F13A-TR attributes and parameters. Explore more Transient Suppression Devices devices from STMicroelectronics

Specs

Maximum Breakdown Voltage:

15.8 V

Minimum Breakdown Voltage:

14.3 V

Nominal Breakdown Voltage:

15 V

Maximum Clamping Voltage:

21.5 V

Config:

SINGLE

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-222AA

JESD-30 Code:

R-PDSO-F2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

400 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

2.5 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

13 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SMM4F13A-TR Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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