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M95256-WMN6T

STMicroelectronics

M95256-WMN6T by STMicroelectronics

M95256-WMN6T by STMicroelectronics is a 32KX8 EEPROM with SPI serial bus type, 262144 bit memory density, and 100000 write/erase cycles endurance. It operates at a max clock frequency of 5 MHz and has a small outline package style. Ideal for industrial applications requiring reliable non-volatile memory storage.

Median Price

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Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

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Chip Stock

USA . 66,750 parts In-Stock

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Digiode

USA . 1,776 parts In-Stock

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J2 Sourcing AB

Sweden . 1,214 parts In-Stock

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Anansix

USA . 1,030 parts In-Stock

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Prism Electronics

USA . 928 parts In-Stock

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928

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Vyrian

USA . 446 parts In-Stock

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446

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Nova Conductors

Japan . 300 parts In-Stock

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300

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LWI Electronics Inc

India . 195 parts In-Stock

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195

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IDEA Electronic Components Group

UK . 2,018 parts In-Stock

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$2.943

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$2.649

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2,018

$2.943

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$2.649

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Aztec Data Supply Inc.

USA . 5,681 parts In-Stock

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$3.047

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5,681

$3.047

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Corohmni

South Africa . 114 parts In-Stock

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$4.986

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$4.986

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MKK Technologies

India . 1,260 parts In-Stock

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$5.534

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$5.534

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DigiPath Technology Company

USA . 1,260 parts In-Stock

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$5.534

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Ampacity Inc.

Singapore . 435 parts In-Stock

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$13.000

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435

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AZTECH Wire

Italy . 579 parts In-Stock

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$13.384

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Lixinc

USA . 16,908 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,247 parts In-Stock

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Continental Prestige Electronics

USA . 4,196 parts In-Stock

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Argo Parts USA

USA . 4,003 parts In-Stock

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Corphita

USA . 3,915 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,498 parts In-Stock

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Authorized Procurement Solutions

USA . 1,561 parts In-Stock

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Perfect Parts

USA . 1,039 parts In-Stock

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Parana Technologies

USA . 635 parts In-Stock

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$3.519

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Aranea Global

USA . 500 parts In-Stock

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Kepictronics

USA . 210 parts In-Stock

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Overview

Unlock the power of reliable data storage with the M95256-WMN6T EEPROM by STMicroelectronics. Crafted with precision and expertise, this high-quality memory IC offers 32Kx8 organization, ensuring seamless performance in industrial applications. With a durable plastic/epoxy package body and hardware/software write protection, this EEPROM guarantees data integrity and security. Experience the benefits of parallel or serial operation, small outline packaging, and a wide operating temperature range, making it the perfect choice for your electronic design needs. Trust STMicroelectronics for exceptional quality and performance that exceeds expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures a lightweight and durable construction, making it ideal for various applications.

Surface Mount: YES

Being surface mountable makes installation and integration easier, making this product a convenient choice for circuit design.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient use of space on a circuit board, maximizing the layout flexibility.

Operating Mode: SYNCHRONOUS

The synchronous operation ensures precise and synchronized data transfers, enhancing overall performance.

Nominal Supply Voltage / Vsup (V): 5

The nominal supply voltage of 5V provides stable power to the EEPROM, ensuring reliable operation.

Power Supplies (V): 3/5

Compatibility with both 3V and 5V power supplies makes this EEPROM versatile and suitable for a wide range of applications.

No. of Terminals: 8

With 8 terminals, this EEPROM offers easy connectivity and integration within a circuit setup.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB and allows for compact designs.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature ensures reliable performance even in harsh environments.

Organization: 32KX8

The 32KX8 organization provides a large memory capacity with efficient data storage capabilities.

Minimum Operating Temperature: -40 °C

The EEPROM can operate in low temperatures, making it suitable for a variety of applications in different environments.

Terminal Position: DUAL

The dual terminal position offers flexibility in installation and ensures secure connections.

Write Protection: HARDWARE/SOFTWARE

The option of hardware/software write protection enhances data security and prevents accidental data loss.

Maximum Seated Height: 1.75 mm

The low seated height profile makes it suitable for slim and compact designs.

Maximum Clock Frequency (fCLK): 5 MHz

The high clock frequency enables fast data transfer rates, enhancing overall efficiency.

Width: 3.9 mm

The compact width of the EEPROM allows for efficient use of space on the PCB.

Minimum Supply Voltage (Vsup): 2.5 V

The low minimum supply voltage ensures compatibility with a wide range of power sources.

Length: 4.9 mm

The small length of the EEPROM contributes to a space-saving design on the PCB.

Temperature Grade: INDUSTRIAL

The industrial temperature grade ensures reliable performance in demanding industrial environments.

Technology: CMOS

The CMOS technology offers low power consumption and high-speed operation, making it an energy-efficient choice.

Parallel or Serial: SERIAL

The serial interface allows for easy integration and communication with other digital systems.

Terminal Form: GULL WING

The gull wing terminal form provides secure connections and ease of soldering during installation.

Maximum Supply Current: 3 mA

The low maximum supply current helps in conserving power and reducing energy consumption.

No. of Words: 32768 words

The large number of words allows for ample data storage capacity, suitable for various applications.

Memory Width: 8

The 8-bit memory width ensures efficient data storage and retrieval processes.

Minimum Data Retention Time: 40

The EEPROM can retain data for a minimum of 40 ms, ensuring data reliability and integrity.

Terminal Pitch: 1.27 mm

The small terminal pitch simplifies PCB design and offers ease of assembly.

No. of Words Code: 32K

The 32K words code provides a clear indication of the EEPROM's memory capacity.

Maximum Supply Voltage (Vsup): 5.5 V

The high maximum supply voltage allows for compatibility with a wide range of power sources.

Endurance: 100000 Write/Erase Cycles

The high endurance rating ensures long-lasting performance and reliability.

Serial Bus Type: SPI

The SPI serial bus type enables easy communication and integration with other SPI-compatible devices.

Maximum Write Cycle Time (tWC): 5 ms

The fast write cycle time of 5 ms enhances efficiency and data processing speed.

Memory Density: 262144 bit

The high memory density provides ample storage capacity for various data-intensive applications.

Memory IC Type: EEPROM

The EEPROM memory IC type offers non-volatile storage capabilities, suitable for data retention and retrieval tasks.

Maximum Standby Current: 0.000001 Amp

The low maximum standby current ensures minimal power consumption during idle periods.

Technical Specifications

EEPROM M95256-WMN6T attributes and parameters. Explore more EEPROM devices from STMicroelectronics

Specs

Maximum Clock Frequency (fCLK):

5 MHz

Minimum Data Retention Time:

40

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e0

Length:

4.9 mm

Memory Density:

262144 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

8

No. of Words:

32768 words

No. of Words Code:

32K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

32KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

3/5

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Serial Bus Type:

SPI

Maximum Standby Current:

.000001 Amp

Sub-Category:

EEPROMs

Maximum Supply Current:

3 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

3.9 mm

Maximum Write Cycle Time (tWC):

5 ms

Write Protection:

HARDWARE/SOFTWARE

Trade Compliance

M95256-WMN6T Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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