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M95256-BN3G

STMicroelectronics

M95256-BN3G by STMicroelectronics

M95256-BN3G by STMicroelectronics is a 32Kx8 EEPROM with a max operating temp of 125 °C and operates at 5V. It features hardware/software write protection and supports SPI for synchronous communication. Ideal for automotive applications, it ensures reliable data retention and endurance.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,992 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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3,992

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Anansix

USA . 2,796 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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2,796

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Vyrian

USA . 2,660 parts In-Stock

1+ parts

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2,660

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,226 parts In-Stock

1+ parts

$4.645

100+ parts

-

1k+ parts

$4.181

10k+ parts

-

1,226

$4.645

-

$4.181

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MKK Technologies

India . 2,205 parts In-Stock

1+ parts

$8.735

100+ parts

-

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2,205

$8.735

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DigiPath Technology Company

USA . 2,205 parts In-Stock

1+ parts

$8.735

100+ parts

-

1k+ parts

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10k+ parts

-

2,205

$8.735

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Corphita

USA . 2,488 parts In-Stock

1+ parts

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2,488

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Parana Technologies

USA . 279 parts In-Stock

1+ parts

-

100+ parts

$5.554

1k+ parts

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10k+ parts

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279

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$5.554

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Overview

Unlock unparalleled reliability with the M95256-BN3G EEPROM from STMicroelectronics, a leader in innovative semiconductor solutions. Designed for automotive and industrial applications, this high-performance memory offers robust data retention even in extreme conditions, ensuring your projects run smoothly. Enjoy the benefits of easy integration, enhanced durability, and superior write protection, making it the perfect choice for mission-critical systems where quality and efficiency are paramount.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of durable plastic/epoxy materials ensures that the product is robust and can withstand various environmental conditions.

Package Shape: RECTANGULAR

The rectangular shape facilitates efficient layout in electronic circuits, making it space-efficient.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for faster data transfer rates, improving overall system performance.

Nominal Supply Voltage / Vsup: 5V

A nominal supply voltage of 5V is standard in many applications, ensuring compatibility with a wide range of devices.

Power Supplies (V): 5V

Utilizing a 5V power supply means the product can be easily integrated into existing systems with minimal modification.

No. of Terminals: 8

Having 8 terminals provides versatility in interfacing and eases the integration process.

Package Style (Meter): IN-LINE

An in-line package style promotes ease of handling and installation in various circuit designs.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, the product is suited for automotive and industrial applications in harsh environments.

Organization: 32KX8

A 32KX8 organization offers a balance between capacity and performance, meeting the needs of many applications.

Minimum Operating Temperature: -40 °C

The -40 °C minimum operating temperature allows for use in extreme conditions, making it ideal for automotive applications.

Terminal Finish: MATTE TIN

Matte tin terminal finish ensures good solderability and corrosion resistance, enhancing longevity.

Terminal Position: DUAL

Dual terminal positioning allows for more flexible mounting options in circuit designs.

Write Protection: HARDWARE/SOFTWARE

Hybrid write protection mechanisms enhance data security, making it suitable for critical applications.

Maximum Seated Height: 5.33 mm

With a maximum seated height of 5.33 mm, this product is compact and space-efficient.

Maximum Clock Frequency (fCLK): 5 MHz

A 5 MHz maximum clock frequency helps to achieve high-speed data transfer, improving performance.

Width: 7.62 mm

A width of 7.62 mm allows for flexible design choices and easy integration into various layouts.

Minimum Supply Voltage (Vsup): 4.5V

A minimum supply voltage of 4.5V ensures versatility in operation, allowing for compatibility with varying power sources.

Length: 9.27 mm

With a length of 9.27 mm, the product maintains a compact profile suitable for space-constrained applications.

Temperature Grade: AUTOMOTIVE

Designed to meet automotive temperature grades, ensuring reliability and performance in demanding environments.

Technology: CMOS

Using CMOS technology results in low power consumption and high-speed operation, making it efficient.

Parallel or Serial: SERIAL

A serial interface simplifies connections and reduces wiring complexity in circuit designs.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide robust mechanical support and are proven reliable in various applications.

Maximum Supply Current: 4 mA

With a maximum supply current of only 4 mA, the device contributes to power efficiency in battery-operated applications.

No. of Words: 32768 words

Offering 32,768 words gives a substantial amount of memory, making it suitable for a variety of data storage tasks.

Memory Width: 8

An 8-bit memory width provides compatibility with common data formats, simplifying application design.

Minimum Data Retention Time: 40 years

A minimum data retention time of 40 years ensures long-term data integrity, making it perfect for critical applications.

Terminal Pitch: 2.54 mm

A terminal pitch of 2.54 mm is standard in electronics, promoting easy integration with existing products.

No. of Words Code: 32K

A 32K word code is suitable for a wide range of use cases, balancing memory capacity and cost.

Maximum Supply Voltage (Vsup): 5.5V

With a maximum supply voltage of 5.5V, it offers flexibility in supply voltage options.

Endurance: 100000 Write/Erase Cycles

An endurance of 100,000 write/erase cycles ensures long-lasting performance in data-heavy applications.

Serial Bus Type: SPI

Using the SPI serial bus type facilitates high-speed communication and easy integration with microcontrollers.

Maximum Write Cycle Time (tWC): 5 ms

A maximum write cycle time of 5 ms ensures quick data updating capabilities, enhancing performance.

Memory Density: 262144 bit

With a memory density of 262,144 bits, it provides ample storage capacity for complex applications.

Memory IC Type: EEPROM

As an EEPROM memory IC, it offers non-volatile storage, retaining data even without power.

Maximum Standby Current: 0.000005 Amp

A maximum standby current of only 0.000005 amps contributes to low power consumption, ideal for energy-efficient designs.

Technical Specifications

EEPROM M95256-BN3G attributes and parameters. Explore more EEPROM devices from STMicroelectronics

Specs

Maximum Clock Frequency (fCLK):

5 MHz

Minimum Data Retention Time:

40

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PDIP-T8

JESD-609 Code:

e3

Length:

9.27 mm

Memory Density:

262144 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

8

No. of Words:

32768 words

No. of Words Code:

32K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

32KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP8,.3

Package Shape:

Package Style (Meter):

IN-LINE

Parallel or Serial:

SERIAL

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

5.33 mm

Serial Bus Type:

SPI

Maximum Standby Current:

.000005 Amp

Sub-Category:

EEPROMs

Maximum Supply Current:

4 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width:

7.62 mm

Maximum Write Cycle Time (tWC):

5 ms

Write Protection:

HARDWARE/SOFTWARE

Trade Compliance

M95256-BN3G Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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