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M24128-BBN5

STMicroelectronics

M24128-BBN5 by STMicroelectronics

M24128-BBN5 by STMicroelectronics is a 16Kx8 EEPROM with a synchronous operating mode and I2C interface. It operates b/w -20 °C to 85°C, requiring a supply voltage of 4.5V to 5.5V. Ideal for data storage in consumer electronics, it offers hardware write protection and high endurance of 100k cycles.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,260 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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4,260

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Anansix

USA . 2,446 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

-

10k+ parts

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2,446

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Vyrian

USA . 1,290 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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1,290

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,281 parts In-Stock

1+ parts

$4.911

100+ parts

-

1k+ parts

$4.420

10k+ parts

-

1,281

$4.911

-

$4.420

-

MKK Technologies

India . 785 parts In-Stock

1+ parts

$9.235

100+ parts

-

1k+ parts

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10k+ parts

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785

$9.235

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-

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DigiPath Technology Company

USA . 785 parts In-Stock

1+ parts

$9.235

100+ parts

-

1k+ parts

-

10k+ parts

-

785

$9.235

-

-

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Corphita

USA . 1,900 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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1,900

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Parana Technologies

USA . 1,069 parts In-Stock

1+ parts

-

100+ parts

$5.872

1k+ parts

-

10k+ parts

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1,069

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$5.872

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Overview

Unlock the power of reliable memory solutions with the M24128-BBN5 EEPROM from STMicroelectronics. Renowned for their innovation and quality, STMicroelectronics ensures this robust component delivers exceptional performance across diverse applications—from consumer electronics to industrial systems. Experience the advantages of effortless integration, low power consumption, and long data retention, all while enjoying unmatched durability and write protection. Elevate your designs with confidence!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy enhances durability and protects the EEPROM from environmental factors, making it suitable for various applications.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient space utilization on circuit boards, enabling versatile design options.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures faster data transfer rates, improving overall system performance.

Nominal Supply Voltage / Vsup: 5V

A common supply voltage of 5V makes it easy to integrate with a variety of existing systems.

Power Supplies: 5V

Supports efficient power management with a standard voltage level, facilitating easier design integration.

No. of Terminals: 8

Eight terminals provide necessary connectivity while keeping the physical footprint relatively small.

Package Style (Meter): IN-LINE

In-line package style is ideal for through-hole mounting, ensuring reliable mechanical and electrical connections.

Maximum Operating Temperature: 85 °C

Ability to operate at higher temperatures makes it suitable for industrial and automotive applications.

Organization: 16KX8

A memory organization of 16Kx8 allows for effective data structuring, making it versatile for various applications.

Minimum Operating Temperature: -20 °C

A wide operating temperature range ensures reliability in diverse environmental conditions.

Terminal Finish: TIN LEAD

Tin-lead terminal finishes ensure robust solder joint reliability, essential for long-term performance.

I2C Control Byte: 1010DDDR

This control byte pattern simplifies communication protocols, enhancing compatibility with multiple devices.

Terminal Position: DUAL

Dual terminal positioning offers flexible mounting options, accommodating various design requirements.

Write Protection: HARDWARE

Hardware write protection ensures data integrity by preventing accidental writes, crucial for critical applications.

Maximum Seated Height: 5.9 mm

A compact seated height allows for efficient use of space on PCBs, facilitating dense circuit designs.

Width: 7.62 mm

The narrow width is conducive to compact designs, making it beneficial for space-constrained applications.

Minimum Supply Voltage (Vsup): 4.5 V

The reduced minimum supply voltage provides flexibility in power supply design, accommodating a wider range of applications.

Length: 9.55 mm

Short length ensures that the EEPROM can fit into smaller spaces, making it ideal for portable electronics.

Technology: CMOS

CMOS technology offers low power consumption and high density, improving efficiency and performance.

Parallel or Serial: SERIAL

The serial interface reduces pin count and simplifies wiring, enhancing layout efficiency.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide robust physical attachment, making this EEPROM suitable for high-stress environments.

Maximum Supply Current: 2 mA

Low maximum supply current ensures energy efficiency, extending battery life in portable applications.

No. of Words: 16384 words

A capacity of 16384 words allows substantial data storage, suitable for applications requiring moderate memory.

Memory Width: 8

An 8-bit memory width aligns with common data formats, facilitating easier data management and processing.

Minimum Data Retention Time: 40 years

A minimum data retention of 40 years assures long-term data storage reliability, crucial for non-volatile memory applications.

Terminal Pitch: 2.54 mm

Standard 2.54 mm terminal pitch enhances compatibility with a wide range of PCBs and ensures easy assembly.

No. of Words Code: 16K

With 16K words, this EEPROM provides a practical balance of storage capacity and performance.

Maximum Supply Voltage (Vsup): 5.5 V

The tolerance for a higher supply voltage allows for flexibility in system design and power supply configurations.

Endurance: 100000 Write/Erase Cycles

A high endurance rating means this EEPROM can withstand frequent updates, ideal for applications with regular data changes.

Serial Bus Type: I2C

I2C bus type provides a simple and efficient way to connect multiple devices, reducing the complexity of circuit designs.

Memory Density: 131072 bit

A memory density of 131072 bits provides substantial storage capability, fitting various application needs.

Memory IC Type: EEPROM

Being an EEPROM means it retains data without power, essential for non-volatile storage requirements.

Maximum Standby Current: 0.00001 Amp

Minimal standby current ensures that the EEPROM does not drain power in idle mode, improving overall efficiency.

Technical Specifications

EEPROM M24128-BBN5 attributes and parameters. Explore more EEPROM devices from STMicroelectronics

Specs

Minimum Data Retention Time:

40

Endurance:

100000 Write/Erase Cycles

I2C Control Byte:

1010DDDR

JESD-30 Code:

R-PDIP-T8

JESD-609 Code:

e0

Length:

9.55 mm

Memory Density:

131072 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

8

No. of Words:

16384 words

No. of Words Code:

16K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-20 Cel

Organization:

16KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP8,.3

Package Shape:

Package Style (Meter):

IN-LINE

Parallel or Serial:

SERIAL

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

5.9 mm

Serial Bus Type:

I2C

Maximum Standby Current:

.00001 Amp

Sub-Category:

EEPROMs

Maximum Supply Current:

2 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width:

7.62 mm

Write Protection:

HARDWARE

Trade Compliance

M24128-BBN5 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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