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L6392

STMicroelectronics

L6392 by STMicroelectronics

L6392 by STMicroelectronics is a robust half-bridge MOSFET driver designed for automotive applications. It operates at 15V with a peak output current of 0.43A and withstands temperatures from -40 °C to 125°C. Its dual terminal design ensures reliable performance in demanding environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,809 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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4,809

-

-

-

-

Digiode

USA . 300 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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300

-

-

-

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Anansix

USA . 248 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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248

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-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,631 parts In-Stock

1+ parts

$4.930

100+ parts

-

1k+ parts

$4.437

10k+ parts

-

1,631

$4.930

-

$4.437

-

MKK Technologies

India . 2,045 parts In-Stock

1+ parts

$9.271

100+ parts

-

1k+ parts

-

10k+ parts

-

2,045

$9.271

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-

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DigiPath Technology Company

USA . 2,045 parts In-Stock

1+ parts

$9.271

100+ parts

-

1k+ parts

-

10k+ parts

-

2,045

$9.271

-

-

-

Corphita

USA . 2,910 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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2,910

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-

-

-

Parana Technologies

USA . 1,314 parts In-Stock

1+ parts

-

100+ parts

$5.895

1k+ parts

-

10k+ parts

-

1,314

-

$5.895

-

-

Overview

Unlock unparalleled performance with the L6392 from STMicroelectronics, your go-to solution for robust MOSFET gate driving. Renowned for their cutting-edge technology and commitment to quality, STMicroelectronics ensures reliability in automotive applications even under extreme conditions. With its dual high-side driver design, the L6392 enhances efficiency, reduces energy losses, and drives innovation, empowering customers to elevate their projects to new heights. Trust in a product that combines durability with outstanding value for your designs!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy enhances durability and provides protection against environmental factors, making it suitable for various applications.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient use of PCB space and easy integration into designs.

Power Supplies (V): 15V

The 15V power supply capability ensures compatibility with a wide range of power systems commonly used in automotive applications.

No. of Terminals: 14

With 14 terminals, this driver offers sufficient connection points for control and feedback, facilitating complex circuit designs.

Package Style (Meter): IN-LINE

The in-line package style allows for easy assembly and minimizes footprint, which is advantageous for compact designs.

Maximum Operating Temperature: 125 °C

A high maximum operating temperature of 125 °C makes this driver reliable for high-performance and demanding environments.

Minimum Operating Temperature: -40 °C

The capability to operate down to -40 °C ensures reliability in harsh conditions, typical of automotive applications.

Terminal Finish: NICKEL PALLADIUM GOLD

This terminal finish enhances solderability and provides long-lasting connection integrity, which is critical in automotive electronics.

Terminal Position: DUAL

Dual terminal positioning provides flexibility in layout design, allowing for optimized routing on circuit boards.

Maximum Seated Height: 5.1 mm

The compact seated height of 5.1 mm allows this device to fit into low-profile designs, contributing to overall system compactness.

Width: 7.62 mm

With a width of 7.62 mm, this driver can be used in space-constrained environments without compromising performance.

High Side Driver: YES

As a high side driver, it provides efficient control of high side MOSFETs, which is essential in power management applications.

Temperature Grade: AUTOMOTIVE

Designed to meet automotive standards, this driver offers high reliability and robustness required in vehicle applications.

Technology: BCD

BCD technology enables efficient power handling and smaller chip sizes, enhancing overall performance and cost-effectiveness.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide mechanical stability and ease of soldering, which is important for robust applications.

Nominal Supply Voltage: 15 V

The nominal supply voltage aligns with standard automotive system voltages, facilitating easy integration and design.

Terminal Pitch: 2.54 mm

A standard terminal pitch of 2.54 mm simplifies PCB design and manufacturing, making it widely compatible.

Nominal Output Peak Current Limit: 0.43 A

The output peak current limit of 0.43 A ensures sufficient drive capability for controlling external MOSFETs in various applications.

Interface IC Type: HALF BRIDGE BASED MOSFET DRIVER

The half bridge design provides versatility in driving configurations, supporting various motor control and power management tasks.

Technical Specifications

MOSFET Gate Drivers L6392 attributes and parameters. Explore more MOSFET Gate Drivers devices from STMicroelectronics

Specs

High Side Driver:

YES

Interface IC Type:

JESD-30 Code:

R-PDIP-T14

JESD-609 Code:

e4

No. of Functions:

1

No. of Terminals:

14

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Nominal Output Peak Current Limit:

.43 A

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP14,.3

Package Shape:

Package Style (Meter):

IN-LINE

Power Supplies (V):

15

Qualification:

Not Qualified

Maximum Seated Height:

5.1 mm

Sub-Category:

MOSFET Drivers

Nominal Supply Voltage:

15 V

Surface Mount:

NO

Technology:

BCD

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width:

7.62 mm

Trade Compliance

L6392 Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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