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L6393N

STMicroelectronics

L6393N by STMicroelectronics

L6393N by STMicroelectronics is a MOSFET gate driver with a max supply voltage of 20V and power supplies up to 15V. It features an interface IC type of half bridge based MOSFET driver, making it ideal for automotive applications due to its temperature grade and BCD technology. With a turn-on/off time of 0.2 us, this rectangular package style driver is suitable for various high side driving needs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,415 parts In-Stock

1+ parts

-

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2,415

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Anansix

USA . 2,347 parts In-Stock

1+ parts

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1k+ parts

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2,347

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Vyrian

USA . 385 parts In-Stock

1+ parts

-

100+ parts

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385

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 193 parts In-Stock

1+ parts

$5.553

100+ parts

-

1k+ parts

$4.998

10k+ parts

-

193

$5.553

-

$4.998

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MKK Technologies

India . 2,371 parts In-Stock

1+ parts

$10.442

100+ parts

-

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2,371

$10.442

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DigiPath Technology Company

USA . 2,371 parts In-Stock

1+ parts

$10.442

100+ parts

-

1k+ parts

-

10k+ parts

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2,371

$10.442

-

-

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Parana Technologies

USA . 1,896 parts In-Stock

1+ parts

-

100+ parts

$6.640

1k+ parts

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1,896

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$6.640

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Corphita

USA . 405 parts In-Stock

1+ parts

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405

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Overview

Unlock the power of efficient and reliable MOSFET gate driving with the L6393N by STMicroelectronics. With a reputation for top-quality manufacturing, STMicroelectronics delivers cutting-edge technology in a compact rectangular package. Ideal for automotive applications, this half-bridge based driver offers fast turn-on and turn-off times, a nominal output peak current limit of 0.43 A, and a wide operating temperature range. Experience the value of seamless performance and precision control with the L6393N - the ultimate solution for your power management needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material is known for its durability and resistance to heat, making this product reliable for long-term use.

Maximum Supply Voltage: 20 V

With a high maximum supply voltage, this gate driver can handle a wide range of power supplies, making it versatile for various applications.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy integration into existing electronic systems, saving space and simplifying installation.

Power Supplies (V): 15

The 15V power supply capability ensures compatibility with standard power sources, making it easy to incorporate into existing setups.

Terminal Position: DUAL

The dual terminal position provides flexibility in connecting the gate driver to other components, allowing for versatile configurations.

Maximum Seated Height: 5.1 mm

The low seated height makes this gate driver suitable for compact designs where space is limited, without sacrificing performance.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this gate driver can withstand elevated heat levels, ensuring reliable operation in harsh environments.

Technology: BCD

The BCD technology used in this gate driver offers efficiency and accuracy in driving MOSFETs, enhancing overall performance and reliability.

Nominal Output Peak Current Limit: 0.43 A

The high nominal output peak current limit allows for powerful and efficient operation of MOSFETs, making this gate driver suitable for demanding applications.

Technical Specifications

MOSFET Gate Drivers L6393N attributes and parameters. Explore more MOSFET Gate Drivers devices from STMicroelectronics

Specs

High Side Driver:

YES

Interface IC Type:

JESD-30 Code:

R-PDIP-T14

JESD-609 Code:

e4

No. of Functions:

1

No. of Terminals:

14

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Nominal Output Peak Current Limit:

.43 A

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP14,.3

Package Shape:

Package Style (Meter):

IN-LINE

Power Supplies (V):

15

Qualification:

Not Qualified

Maximum Seated Height:

5.1 mm

Sub-Category:

MOSFET Drivers

Maximum Supply Voltage:

20 V

Minimum Supply Voltage:

10 V

Nominal Supply Voltage:

15 V

Surface Mount:

NO

Technology:

BCD

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Turn-off Time:

.2 us

Turn-on Time:

.2 us

Width:

7.62 mm

Trade Compliance

L6393N Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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