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L6390

STMicroelectronics

L6390 by STMicroelectronics

L6390 by STMicroelectronics is a robust half-bridge MOSFET driver designed for automotive applications. It operates at 15V with a peak output current of 0.43A and withstands temperatures from -40 °C to 125°C. Its compact, dual-terminal design ensures reliable performance in demanding environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,902 parts In-Stock

1+ parts

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4,902

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Vyrian

USA . 3,548 parts In-Stock

1+ parts

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3,548

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Anansix

USA . 1,290 parts In-Stock

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1,290

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 62 parts In-Stock

1+ parts

$4.410

100+ parts

-

1k+ parts

$3.969

10k+ parts

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62

$4.410

-

$3.969

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MKK Technologies

India . 922 parts In-Stock

1+ parts

$8.294

100+ parts

-

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922

$8.294

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DigiPath Technology Company

USA . 922 parts In-Stock

1+ parts

$8.294

100+ parts

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922

$8.294

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Corphita

USA . 2,817 parts In-Stock

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2,817

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Parana Technologies

USA . 2,180 parts In-Stock

1+ parts

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$5.273

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2,180

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$5.273

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Overview

Unlock the power of precision with the L6390 from STMicroelectronics, a standout in MOSFET gate drivers. Renowned for quality and reliability, STMicroelectronics ensures superior performance in automotive applications, providing robust solutions for your design challenges. With its high-temperature range and advanced half-bridge technology, the L6390 delivers efficiency and durability, making it the ideal choice for enhancing your systems while maximizing value and operational benefits.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and resistance to environmental factors, making it suitable for various applications.

Package Shape: RECTANGULAR

The rectangular package shape allows for efficient use of space on PCBs, facilitating compact designs.

Power Supplies (V): 15

Operating at a nominal supply voltage of 15 V ensures compatibility with various automotive power systems.

No. of Terminals: 16

With 16 terminals, this driver offers sufficient connectivity options for complex circuits and integrations.

Package Style (Meter): IN-LINE

The in-line package style supports easy integration into existing systems and simplifies the assembly process.

Maximum Operating Temperature: 125 °C

A maximum operating temperature of 125 °C enables reliable performance in high-temperature environments.

Minimum Operating Temperature: -40 °C

Operable at temperatures as low as -40 °C makes this driver ideal for extreme environmental conditions.

Terminal Position: DUAL

Dual terminal positioning enhances flexibility in layout design and electrical connectivity.

Maximum Seated Height: 5.1 mm

With a low seated height, this driver contributes to a more compact overall design while maintaining performance.

Width: 7.62 mm

The width of 7.62 mm allows for efficient usage of board space without compromising on performance.

High Side Driver: YES

Being a high-side driver improves efficiency in automotive applications, allowing for better control and energy savings.

Temperature Grade: AUTOMOTIVE

Designed to meet automotive standards, ensuring reliability and safety in automotive applications.

Technology: BCD

BCD (Bipolar-CMOS-DMOS) technology enables higher efficiency and integration, reducing the overall footprint of the application.

Terminal Form: THROUGH-HOLE

Through-hole terminal form provides robust mechanical and electrical connections, leading to reliability in demanding applications.

Nominal Supply Voltage: 15 V

The nominal supply voltage of 15 V is ideal for a wide range of automotive and industrial applications.

Terminal Pitch: 2.54 mm

A terminal pitch of 2.54 mm offers compatibility with standard PCB designs, easing the integration process.

Nominal Output Peak Current Limit: 0.43 A

The output peak current limit of 0.43 A is suitable for driving various loads effectively, providing flexibility in applications.

Interface IC Type: HALF BRIDGE BASED MOSFET DRIVER

Being a half-bridge based driver enhances versatility in driving configurations, making it a suitable choice for different applications.

Technical Specifications

MOSFET Gate Drivers L6390 attributes and parameters. Explore more MOSFET Gate Drivers devices from STMicroelectronics

Specs

High Side Driver:

YES

Interface IC Type:

JESD-30 Code:

R-PDIP-T16

No. of Functions:

1

No. of Terminals:

16

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Nominal Output Peak Current Limit:

.43 A

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP16,.3

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

15

Qualification:

Not Qualified

Maximum Seated Height:

5.1 mm

Sub-Category:

MOSFET Drivers

Nominal Supply Voltage:

15 V

Surface Mount:

NO

Technology:

BCD

Temperature Grade:

Terminal Form:

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

7.62 mm

Trade Compliance

L6390 Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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