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L6390N

STMicroelectronics

L6390N by STMicroelectronics

L6390N by STMicroelectronics is a MOSFET gate driver with 15V power supply, 20V max supply voltage, and 0.43A output peak current limit. Ideal for automotive applications, it features BCD technology, half bridge based interface IC type, and operates b/w -40 to 125 °C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,645 parts In-Stock

1+ parts

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4,645

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Anansix

USA . 1,520 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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1,520

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-

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Digiode

USA . 801 parts In-Stock

1+ parts

-

100+ parts

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801

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,119 parts In-Stock

1+ parts

$9.953

100+ parts

-

1k+ parts

$8.958

10k+ parts

-

1,119

$9.953

-

$8.958

-

MKK Technologies

India . 174 parts In-Stock

1+ parts

$18.717

100+ parts

-

1k+ parts

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10k+ parts

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174

$18.717

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DigiPath Technology Company

USA . 174 parts In-Stock

1+ parts

$18.717

100+ parts

-

1k+ parts

-

10k+ parts

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174

$18.717

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-

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Corphita

USA . 372 parts In-Stock

1+ parts

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372

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Parana Technologies

USA . 97 parts In-Stock

1+ parts

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100+ parts

$11.901

1k+ parts

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10k+ parts

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97

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$11.901

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Overview

Looking for a reliable MOSFET gate driver that delivers exceptional performance and quality? Look no further than the L6390N by STMicroelectronics. With its innovative BCD technology and automotive-grade temperature grade, this driver offers unparalleled reliability and efficiency. Whether you're designing automotive applications, industrial automation systems, or power supplies, the L6390N provides the perfect solution with its high side driver capability and fast turn-on/off times. Trust STMicroelectronics to bring you cutting-edge technology that meets your needs and exceeds your expectations. Elevate your designs with the L6390N today!

Feature Benefit Bullets

Maximum Supply Voltage: 20 V

With a high maximum supply voltage, this gate driver can handle a wide range of power supply inputs, making it versatile and reliable.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy integration and compact placement within electronic circuits.

Minimum Operating Temperature: -40 °C

With a low minimum operating temperature, this gate driver is suitable for use in harsh environments or extreme temperature conditions.

High Side Driver: YES

Having a high side driver capability allows for efficient and effective control of power MOSFETs in high-side switching applications.

Temperature Grade: AUTOMOTIVE

Being designed for automotive applications, this gate driver meets strict automotive industry standards for reliability and performance.

Technology: BCD

Utilizing Bipolar-CMOS-DMOS (BCD) technology, this gate driver offers high integration, low power consumption, and high performance for driving MOSFETs.

Turn-on Time: 0.2 us

With a fast turn-on time, this gate driver can quickly switch on MOSFETs, reducing switching losses and improving efficiency.

Technical Specifications

MOSFET Gate Drivers L6390N attributes and parameters. Explore more MOSFET Gate Drivers devices from STMicroelectronics

Specs

High Side Driver:

YES

Interface IC Type:

JESD-30 Code:

R-XDIP-T16

JESD-609 Code:

e4

No. of Functions:

1

No. of Terminals:

16

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Nominal Output Peak Current Limit:

.43 A

Package Body Material:

UNSPECIFIED

Package Code:

DIP

Package Equivalence Code:

DIP16,.3

Package Shape:

Package Style (Meter):

IN-LINE

Power Supplies (V):

15

Qualification:

Not Qualified

Maximum Seated Height:

5.1 mm

Sub-Category:

MOSFET Drivers

Maximum Supply Voltage:

20 V

Minimum Supply Voltage:

12.5 V

Nominal Supply Voltage:

15 V

Surface Mount:

NO

Technology:

BCD

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Turn-off Time:

.2 us

Turn-on Time:

.2 us

Width:

7.62 mm

Trade Compliance

L6390N Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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