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ESDLIN1524BJ(24V)

STMicroelectronics

ESDLIN1524BJ(24V) by STMicroelectronics

The ESDLIN1524BJ (24V) by STMicroelectronics is a bidirectional transient voltage suppressor diode designed for robust circuit protection. It features a max reverse power dissipation of 160W, operates b/w -40 °C to 150°C, and has a breakdown voltage range of 25.4V to 30.3V. Ideal for safeguarding sensitive electronics from voltage spikes in various applications.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,497 parts In-Stock

1+ parts

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1k+ parts

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4,497

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Vyrian

USA . 3,712 parts In-Stock

1+ parts

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3,712

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Anansix

USA . 310 parts In-Stock

1+ parts

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310

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 367 parts In-Stock

1+ parts

$0.151

100+ parts

-

1k+ parts

$0.136

10k+ parts

-

367

$0.151

-

$0.136

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MKK Technologies

India . 424 parts In-Stock

1+ parts

$0.284

100+ parts

-

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424

$0.284

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DigiPath Technology Company

USA . 424 parts In-Stock

1+ parts

$0.284

100+ parts

-

1k+ parts

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424

$0.284

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Native Components

USA . 665 parts In-Stock

1+ parts

$1.925

100+ parts

-

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665

$1.925

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Northwest PG Solutions

USA . 307 parts In-Stock

1+ parts

$2.118

100+ parts

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307

$2.118

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Corphita

USA . 4,662 parts In-Stock

1+ parts

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4,662

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Parana Technologies

USA . 712 parts In-Stock

1+ parts

-

100+ parts

$0.180

1k+ parts

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712

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$0.180

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Overview

Elevate your designs with the ESDLIN1524BJ(24V) from STMicroelectronics, a leader in innovative semiconductor solutions. This robust transient suppression device not only ensures superior protection against voltage spikes but also enhances reliability across various applications, from consumer electronics to industrial machinery. With its exceptional thermal performance and compact surface-mount design, experience peace of mind knowing your systems are safeguarded by a trusted name in technology. Choose quality, choose STMicroelectronics.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body ensures durability and resilience against environmental factors, making it suitable for various applications.

Config: SINGLE

This single configuration facilitates easier integration into circuits, reducing complexity and space requirements.

Surface Mount: YES

Being a surface mount device allows for compact PCB designs and efficient use of board space, enhancing manufacturing productivity.

Maximum Non Repetitive Peak Reverse Power Dissipation: 160 W

A high maximum non-repetitive peak reverse power dissipation capability underscores the device's ability to handle surge events without damage, ensuring reliability.

Package Shape: RECTANGULAR

The rectangular package shape aids in efficient space utilization on PCBs, optimizing layout design.

No. of Terminals: 2

Having only two terminals simplifies the connection process and reduces the likelihood of incorrect installations.

Package Style (Meter): SMALL OUTLINE

The small outline package style contributes to low-profile designs, allowing for versatile applications in space-constrained environments.

Maximum Operating Temperature: 150 °C

A high maximum operating temperature enables the device to function reliably in demanding environments without failure.

Minimum Operating Temperature: -40 °C

The ability to operate at extremely low temperatures makes this device suitable for a wide range of climates and applications.

Terminal Position: DUAL

Dual terminal positioning allows for flexible orientation on the PCB, facilitating design versatility.

Minimum Breakdown Voltage: 25.4 V

A minimum breakdown voltage of 25.4 V ensures effective suppression of transients, protecting sensitive components.

Maximum Breakdown Voltage: 30.3 V

The maximum breakdown voltage of 30.3 V provides a robust safeguard against voltage spikes, increasing circuit reliability.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

As a transient voltage suppressor diode, this device is specifically designed to protect circuits from voltage surges, enhancing system safety.

Technology: AVALANCHE

The avalanche technology utilized in this diode ensures rapid response to voltage transients, minimizing the risk of component damage.

Terminal Form: GULL WING

Gull wing terminal form allows for easy soldering and improves mechanical stability on the PCB.

Maximum Repetitive Peak Reverse Voltage: 24 V

A maximum repetitive peak reverse voltage of 24 V ensures that the device can handle repeated voltage spikes effectively.

Polarity: BIDIRECTIONAL

The bidirectional nature of the device allows it to protect circuits regardless of the direction of the voltage spike.

Diode Element Material: SILICON

Using silicon as the diode element material provides excellent electrical performance and stability across a range of conditions.

Technical Specifications

Transient Suppression Devices ESDLIN1524BJ(24V) attributes and parameters. Explore more Transient Suppression Devices devices from STMicroelectronics

Specs

Maximum Breakdown Voltage:

30.3 V

Minimum Breakdown Voltage:

25.4 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-G2

Maximum Non Repetitive Peak Reverse Power Dissipation:

160 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Polarity:

BIDIRECTIONAL

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

24 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Form:

Terminal Position:

Trade Compliance

ESDLIN1524BJ(24V) Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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