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ESDL3552BPFCT5G

Onsemi

ESDL3552BPFCT5G by Onsemi

ESDL3552BPFCT5G by Onsemi is a Transient Suppression Device with 3 ELEMENTS in COMMON ANODE config. It has a Breakdown Voltage of 10.2V, Max Clamping Voltage of 18V, and operates b/w -55 to 150 °C. Ideal for applications requiring protection against voltage transients like IEC-61000-4-2, 4-5 standards compliance.

Median Price

$0.216

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 8,415 parts In-Stock

1+ parts

$0.370

100+ parts

$0.144

1k+ parts

$0.085

10k+ parts

$0.056

8,415

$0.370

$0.144

$0.085

$0.056

DigiKey

USA . 7,192 parts In-Stock

1+ parts

$0.370

100+ parts

$0.144

1k+ parts

$0.094

10k+ parts

$0.073

7,192

$0.370

$0.144

$0.094

$0.073

Rochester

USA . 699,490 parts In-Stock

1+ parts

-

100+ parts

$0.062

1k+ parts

$0.051

10k+ parts

$0.046

699,490

-

$0.062

$0.051

$0.046

Verical

USA . 690,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.057

690,000

-

-

-

$0.057

Flip Electronics (Authorized)

USA . 640,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

640,000

-

-

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 739 parts In-Stock

1+ parts

$0.048

100+ parts

-

1k+ parts

-

10k+ parts

-

739

$0.048

-

-

-

Vyrian

USA . 2,133 parts In-Stock

1+ parts

$0.050

100+ parts

-

1k+ parts

-

10k+ parts

-

2,133

$0.050

-

-

-

Flip Electronics

USA . 640,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

640,000

-

-

-

-

Chip Stock

USA . 19,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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19,000

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 339,180 parts In-Stock

1+ parts

$0.043

100+ parts

-

1k+ parts

-

10k+ parts

-

339,180

$0.043

-

-

-

Corphita

USA . 1,834 parts In-Stock

1+ parts

$0.045

100+ parts

-

1k+ parts

-

10k+ parts

-

1,834

$0.045

-

-

-

Corohmni

South Africa . 280 parts In-Stock

1+ parts

$0.050

100+ parts

-

1k+ parts

-

10k+ parts

-

280

$0.050

-

-

-

Native Components

USA . 97 parts In-Stock

1+ parts

$6.833

100+ parts

-

1k+ parts

-

10k+ parts

-

97

$6.833

-

-

-

Authorized Procurement Solutions

USA . 7,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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7,000

-

-

-

-

SupplyDigital Components

Austria . 4,714 parts In-Stock

1+ parts

-

100+ parts

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10k+ parts

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4,714

-

-

-

-

Problanco Electronics

Mexico . 3,879 parts In-Stock

1+ parts

-

100+ parts

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3,879

-

-

-

-

Northwest PG Solutions

USA . 714 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$6.697

10k+ parts

-

714

-

-

$6.697

-

UHIMA Technologies

Türkiye . 613 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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613

-

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TANS Electronics

Latvia . 276 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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276

-

-

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Kulean Microsystems

USA . 112 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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112

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Overview

Looking to protect your electronic devices from voltage spikes and transients? The Onsemi ESDL3552BPFCT5G is the perfect solution for you! Manufactured by Onsemi, a trusted name in the industry, this transient suppression device offers unmatched quality and reliability. With its common anode configuration and three elements, this chip carrier package is ideal for a wide range of applications. Ensure the safety and longevity of your electronics with this high-performance diode element material that provides maximum clamping voltage of 18V. Trust Onsemi for superior protection against electrical surges!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material makes the device lightweight and durable, ideal for various mounting applications.

Nominal Breakdown Voltage: 10.2 V

The high nominal breakdown voltage of 10.2 V ensures effective protection against transient voltage spikes and surges.

Maximum Reverse Current: 0.05 uA

The low maximum reverse current of 0.05 uA indicates minimal leakage current, ensuring reliable performance and efficiency.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, the device can withstand high temperature environments without compromising its functionality.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature of -55 °C allows the device to operate effectively even in extreme cold conditions.

Maximum Power Dissipation: 0.3 W

The maximum power dissipation of 0.3 W indicates the device's ability to handle high transient power surges efficiently.

Technical Specifications

Transient Suppression Devices ESDL3552BPFCT5G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY, LOW CAPACITANCE

Maximum Breakdown Voltage:

11.5 V

Minimum Breakdown Voltage:

6.5 V

Nominal Breakdown Voltage:

10.2 V

Case Connection:

ISOLATED

Maximum Clamping Voltage:

18 V

Config:

COMMON ANODE, 3 ELEMENTS

Diode Element Material:

SILICON

JESD-30 Code:

R-PBCC-N3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

3

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.3 W

Reference Standard:

IEC-61000-4-2, 4-5

Maximum Repetitive Peak Reverse Voltage:

5 V

Maximum Reverse Current:

.05 uA

Reverse Test Voltage:

5 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

ESDL3552BPFCT5G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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