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ESDL2012MX4T5G

Onsemi

ESDL2012MX4T5G by Onsemi

ESDL2012MX4T5G by Onsemi is a single transient suppression device with a breakdown voltage of 1.6V and max clamping voltage of 7.5V. It is a bidirectional diode ideal for protecting electronic circuits from voltage spikes in applications such as consumer electronics and industrial equipment.

Median Price

$0.140

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 159,865 parts In-Stock

1+ parts

$0.240

100+ parts

$0.068

1k+ parts

$0.054

10k+ parts

$0.037

159,865

$0.240

$0.068

$0.054

$0.037

DigiKey

USA . 207,304 parts In-Stock

1+ parts

$0.270

100+ parts

$0.102

1k+ parts

$0.066

10k+ parts

$0.051

207,304

$0.270

$0.102

$0.066

$0.051

Flip Electronics (Authorized)

USA . 986,458 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

986,458

-

-

-

-

Verical

USA . 762,950 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.040

762,950

-

-

-

$0.040

Rochester

USA . 756,802 parts In-Stock

1+ parts

-

100+ parts

$0.039

1k+ parts

$0.032

10k+ parts

$0.029

756,802

-

$0.039

$0.032

$0.029

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,193 parts In-Stock

1+ parts

$0.053

100+ parts

-

1k+ parts

-

10k+ parts

-

2,193

$0.053

-

-

-

Digiode

USA . 2,106 parts In-Stock

1+ parts

$0.285

100+ parts

-

1k+ parts

-

10k+ parts

-

2,106

$0.285

-

-

-

Chip Stock

USA . 33,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

33,500

-

-

-

-

Flip Electronics

USA . 26,458 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

26,458

-

-

-

-

IBS Electronics

USA . 20,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.075

20,000

-

-

-

$0.075

NAC Semi

USA . 20,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.119

20,000

-

-

-

$0.119

Nova Conductors

Japan . 10 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

10

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 258,763 parts In-Stock

1+ parts

$0.045

100+ parts

-

1k+ parts

-

10k+ parts

-

258,763

$0.045

-

-

-

Corohmni

South Africa . 76 parts In-Stock

1+ parts

$0.053

100+ parts

-

1k+ parts

-

10k+ parts

-

76

$0.053

-

-

-

Corphita

USA . 1,473 parts In-Stock

1+ parts

$0.270

100+ parts

-

1k+ parts

-

10k+ parts

-

1,473

$0.270

-

-

-

iodParts Technologies Inc.

India . 8,980 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8,980

-

-

-

-

SupplyDigital Components

Austria . 8,284 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8,284

-

-

-

-

Problanco Electronics

Mexico . 8,222 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8,222

-

-

-

-

Kulean Microsystems

USA . 7,251 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,251

-

-

-

-

TANS Electronics

Latvia . 6,476 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,476

-

-

-

-

Netroflash

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,000

-

-

-

-

UHIMA Technologies

Türkiye . 296 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

296

-

-

-

-

Overview

Experience peace of mind with the ESDL2012MX4T5G by Onsemi, a top-of-the-line transient suppression device that guarantees superior quality and reliability. Manufactured by industry leader Onsemi, this product is designed to protect your sensitive electronic equipment from voltage spikes and surges, ensuring uninterrupted performance and longevity. Ideal for a wide range of applications, this single-configured, surface-mountable device offers unparalleled value and benefits, making it the perfect choice for customers who prioritize safety and efficiency. Trust in Onsemi to deliver cutting-edge solutions that exceed expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides reliable and durable housing for the device, ensuring long-term performance and protection.

Nominal Breakdown Voltage: 1.6 V

Suitable for protecting sensitive electronic components by efficiently clamping voltage spikes above this level.

Maximum Reverse Current: 0.5 uA

Provides excellent leakage current characteristics, ensuring minimal power loss and efficient operation.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, making it suitable for various industrial applications.

Minimum Operating Temperature: -55 °C

Can operate in very low temperatures, offering flexibility for different environmental conditions.

Maximum Power Dissipation: 0.313 W

Efficiently dissipates power to prevent overheating and ensure stable performance under high power conditions.

Technical Specifications

Transient Suppression Devices ESDL2012MX4T5G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY, LOW CAPACITANCE

Maximum Breakdown Voltage:

2.1 V

Minimum Breakdown Voltage:

1.4 V

Nominal Breakdown Voltage:

1.6 V

Maximum Clamping Voltage:

7.5 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PBCC-N2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

260

Polarity:

BIDIRECTIONAL

Maximum Power Dissipation:

.313 W

Reference Standard:

IEC-61000-4-2, 4-5

Maximum Repetitive Peak Reverse Voltage:

1 V

Maximum Reverse Current:

.5 uA

Reverse Test Voltage:

1 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

ESDL2012MX4T5G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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