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ESDL4151MX4T5G

Onsemi

ESDL4151MX4T5G by Onsemi

ESDL4151MX4T5G by Onsemi is a single transient suppression device with a breakdown voltage of 16.6V and max clamping voltage of 26V. It is ideal for applications requiring bidirectional protection against voltage transients, meeting IEC-61000-4-2 and 4-5 standards. The diode type is TRANS VOLTAGE SUPPRESSOR DIODE using AVALANCHE technology in a chip carrier package style.

Median Price

$0.093

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 64,070 parts In-Stock

1+ parts

-

100+ parts

$0.097

1k+ parts

$0.080

10k+ parts

$0.072

64,070

-

$0.097

$0.080

$0.072

Verical

USA . 39,528 parts In-Stock

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$0.089

39,528

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$0.089

Distributors (In-Stock)

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Digiode

USA . 1,884 parts In-Stock

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$0.079

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$0.079

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Vyrian

USA . 678 parts In-Stock

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$0.083

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678

$0.083

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Chip Stock

USA . 50,000 parts In-Stock

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Flip Electronics

USA . 24,517 parts In-Stock

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Nova Conductors

Japan . 870 parts In-Stock

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870

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Distributors (Availability)

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Ampacity Inc.

Singapore . 143,297 parts In-Stock

1+ parts

$0.071

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143,297

$0.071

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Corphita

USA . 1,071 parts In-Stock

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$0.075

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1,071

$0.075

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Corohmni

South Africa . 393 parts In-Stock

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$0.083

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393

$0.083

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Modulus Dynamics

Lithuania . 7,205 parts In-Stock

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$0.099

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$0.099

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$0.099

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7,205

$0.099

$0.099

$0.099

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Component Stockers USA

USA . 5,113 parts In-Stock

1+ parts

$0.460

100+ parts

$0.160

1k+ parts

$0.110

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5,113

$0.460

$0.160

$0.110

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Authorized Procurement Solutions

USA . 90,000 parts In-Stock

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Kepictronics

USA . 55,900 parts In-Stock

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iodParts Technologies Inc.

India . 16,000 parts In-Stock

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Lixinc

USA . 10,774 parts In-Stock

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Problanco Electronics

Mexico . 7,619 parts In-Stock

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TANS Electronics

Latvia . 7,426 parts In-Stock

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SupplyDigital Components

Austria . 4,002 parts In-Stock

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Kulean Microsystems

USA . 3,846 parts In-Stock

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Continental Prestige Electronics

USA . 2,673 parts In-Stock

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A-Z Elektronik GmbH

Germany . 1,920 parts In-Stock

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Argo Parts USA

USA . 1,685 parts In-Stock

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Alle Elektronik GmbH

Germany . 1,280 parts In-Stock

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UHIMA Technologies

Türkiye . 442 parts In-Stock

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Aranea Global

USA . 100 parts In-Stock

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Overview

Enhance your electronic devices with the ESDL4151MX4T5G by Onsemi, a top-quality transient suppression device designed for superior performance and reliability. Manufactured by Onsemi, a trusted industry leader, this product offers advanced protection against voltage spikes and surges, ensuring the safety and longevity of your equipment. Ideal for a wide range of applications, this single-config chip carrier is easy to install and provides maximum protection with minimal maintenance. Upgrade your electronics with the ESDL4151MX4T5G and experience peace of mind knowing your devices are safeguarded from unexpected power fluctuations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides good thermal and mechanical properties, making the device durable and reliable.

Config: SINGLE

Single configuration simplifies installation and reduces complexity in circuit design.

Surface Mount: YES

Surface mount capability makes it easier to integrate into a variety of electronic devices.

Nominal Breakdown Voltage: 16.6 V

Provides effective protection by clamping voltages above 16.6V to protect sensitive components in the circuit.

Maximum Reverse Current: 1 uA

Low maximum reverse current ensures minimal leakage when the device is not actively clamping voltage spikes.

Package Shape: RECTANGULAR

Rectangular shape allows for easy placement on circuit boards and efficient use of space.

Reverse Test Voltage: 15 V

The reverse test voltage of 15V indicates the device's ability to withstand a reverse voltage without breakdown.

No. of Terminals: 2

Having just 2 terminals simplifies connection to the circuit, reducing installation errors.

Package Style (Meter): CHIP CARRIER

The chip carrier package style is compact and ideal for surface mounting, contributing to space-saving designs.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150°C, the device can withstand harsh environmental conditions.

Minimum Operating Temperature: -55 °C

The wide operating temperature range from -55°C to 150°C ensures reliable operation in various environments.

Terminal Finish: MATTE TIN

Matte tin terminal finish provides good solderability and corrosion resistance for long-term reliability.

Terminal Position: BOTTOM

Bottom terminal position facilitates easy PCB mounting and minimizes signal path lengths for improved performance.

Minimum Breakdown Voltage: 15.5 V

The minimum breakdown voltage of 15.5V ensures efficient protection against voltage surges within this range.

Maximum Time At Peak Reflow Temperature (s): 30

The device can withstand peak reflow temperatures for up to 30 seconds, ensuring proper soldering during assembly.

Peak Reflow Temperature °C: 260

The device can withstand high peak reflow temperatures of 260°C, suitable for lead-free soldering processes.

Maximum Breakdown Voltage: 19.5 V

The maximum breakdown voltage of 19.5V ensures effective protection against higher voltage surges.

Reference Standard: IEC-61000-4-2, 4-5

Compliance with IEC standards ensures that the device meets performance and safety requirements for transient suppression.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Trans voltage suppressor diode provides efficient clamping of voltage spikes to protect sensitive components in the circuit.

Technology: AVALANCHE

Avalanche technology enhances the device's clamping capability and ensures reliable protection against transient voltage spikes.

Terminal Form: NO LEAD

No lead terminal form simplifies surface mounting and improves thermal performance during operation.

Maximum Repetitive Peak Reverse Voltage: 15 V

The device can handle repetitive peak reverse voltages of up to 15V without compromising performance or reliability.

Polarity: BIDIRECTIONAL

Bidirectional polarity allows the device to protect against voltage spikes in both directions, enhancing overall circuit protection.

Maximum Clamping Voltage: 26 V

The maximum clamping voltage of 26V ensures that voltage spikes are limited to a safe level, protecting downstream components.

Diode Element Material: SILICON

Silicon diode element material offers high reliability and performance in clamping voltage spikes effectively.

Technical Specifications

Transient Suppression Devices ESDL4151MX4T5G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY, LOW CAPACITANCE

Maximum Breakdown Voltage:

19.5 V

Minimum Breakdown Voltage:

15.5 V

Nominal Breakdown Voltage:

16.6 V

Maximum Clamping Voltage:

26 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PBCC-N2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

260

Polarity:

BIDIRECTIONAL

Reference Standard:

IEC-61000-4-2, 4-5

Maximum Repetitive Peak Reverse Voltage:

15 V

Maximum Reverse Current:

1 uA

Reverse Test Voltage:

15 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

ESDL4151MX4T5G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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