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ESDL3552PFCT5G

Onsemi

ESDL3552PFCT5G by Onsemi

ESDL3552PFCT5G by Onsemi is a transient suppression device with common anode configuration, 3 elements, and breakdown voltage of 10.2V. It is used for protecting electronic circuits from voltage spikes in applications such as consumer electronics and industrial equipment.

Median Price

$0.216

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 9,434 parts In-Stock

1+ parts

$0.370

100+ parts

$0.144

1k+ parts

$0.094

10k+ parts

$0.073

9,434

$0.370

$0.144

$0.094

$0.073

Mouser Electronics

USA . 7,905 parts In-Stock

1+ parts

$0.370

100+ parts

$0.144

1k+ parts

$0.085

10k+ parts

$0.056

7,905

$0.370

$0.144

$0.085

$0.056

Rochester

USA . 49,430,000 parts In-Stock

1+ parts

-

100+ parts

$0.062

1k+ parts

$0.051

10k+ parts

$0.046

49,430,000

-

$0.062

$0.051

$0.046

Verical

USA . 36,940,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.057

36,940,000

-

-

-

$0.057

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,240 parts In-Stock

1+ parts

$0.048

100+ parts

-

1k+ parts

-

10k+ parts

-

1,240

$0.048

-

-

-

Vyrian

USA . 1,323 parts In-Stock

1+ parts

$0.050

100+ parts

-

1k+ parts

-

10k+ parts

-

1,323

$0.050

-

-

-

Flip Electronics

USA . 3,400,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,400,000

-

-

-

-

PC Components Company LLC

USA . 117,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

117,000

-

-

-

-

Bristol Electronics

USA . 117,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

117,000

-

-

-

-

Chip Stock

USA . 50,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

50,000

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,820 parts In-Stock

1+ parts

$0.045

100+ parts

-

1k+ parts

-

10k+ parts

-

1,820

$0.045

-

-

-

Corohmni

South Africa . 148 parts In-Stock

1+ parts

$0.050

100+ parts

-

1k+ parts

-

10k+ parts

-

148

$0.050

-

-

-

Northwest PG Solutions

USA . 1,960 parts In-Stock

1+ parts

$2.952

100+ parts

-

1k+ parts

-

10k+ parts

-

1,960

$2.952

-

-

-

Authorized Procurement Solutions

USA . 90,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

90,000

-

-

-

-

TANS Electronics

Latvia . 6,751 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,751

-

-

-

-

Kulean Microsystems

USA . 6,210 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,210

-

-

-

-

SupplyDigital Components

Austria . 3,224 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,224

-

-

-

-

Problanco Electronics

Mexico . 485 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

485

-

-

-

-

Native Components

USA . 317 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$2.603

10k+ parts

-

317

-

-

$2.603

-

UHIMA Technologies

Türkiye . 129 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

129

-

-

-

-

Overview

Unlock unparalleled protection and reliability with the ESDL3552PFCT5G by Onsemi. Crafted with precision by a trusted manufacturer, this transient suppression device offers cutting-edge technology for safeguarding your electronic components. Ideal for a wide range of applications, this product ensures peace of mind with its superior quality and performance. Experience the value and benefits of investing in the ESDL3552PFCT5G for your protection needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good protection and durability for the device, making it suitable for various applications.

Nominal Breakdown Voltage: 10.2 V

The high breakdown voltage ensures effective protection against transient voltage spikes, making it reliable for use in sensitive electronic components.

Maximum Reverse Current: 0.05 uA

Low reverse current ensures minimal power loss and efficient operation of the device in suppressing transient voltage events.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this device can withstand harsh environmental conditions and prolonged use without compromising performance.

Technology: AVALANCHE

The avalanche technology used in this device allows for high energy handling capacity and fast response time in clamping voltage spikes, providing reliable protection for connected equipment.

Technical Specifications

Transient Suppression Devices ESDL3552PFCT5G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY

Maximum Breakdown Voltage:

11.5 V

Minimum Breakdown Voltage:

6.5 V

Nominal Breakdown Voltage:

10.2 V

Case Connection:

ISOLATED

Maximum Clamping Voltage:

18 V

Config:

COMMON ANODE, 3 ELEMENTS

Diode Element Material:

SILICON

JESD-30 Code:

R-PBCC-N3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

3

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.3 W

Reference Standard:

IEC-61000-4-2, 4-5

Maximum Repetitive Peak Reverse Voltage:

5 V

Maximum Reverse Current:

.05 uA

Reverse Test Voltage:

5 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

ESDL3552PFCT5G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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