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BYW80F-50

STMicroelectronics

BYW80F-50 by STMicroelectronics

BYW80F-50 by STMicroelectronics is a single rectifier diode designed for high efficiency applications. It features a max reverse recovery time of 0.035 µs, supports up to 10 A output current, and operates at temperatures up to 150 °C. Ideal for power management in electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,300 parts In-Stock

1+ parts

-

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2,300

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Anansix

USA . 1,062 parts In-Stock

1+ parts

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1,062

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Vyrian

USA . 376 parts In-Stock

1+ parts

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376

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,197 parts In-Stock

1+ parts

$0.089

100+ parts

-

1k+ parts

$0.080

10k+ parts

-

1,197

$0.089

-

$0.080

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MKK Technologies

India . 2,002 parts In-Stock

1+ parts

$0.168

100+ parts

-

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2,002

$0.168

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DigiPath Technology Company

USA . 2,002 parts In-Stock

1+ parts

$0.168

100+ parts

-

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2,002

$0.168

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Native Components

USA . 633 parts In-Stock

1+ parts

$139.210

100+ parts

-

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10k+ parts

$133.642

633

$139.210

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-

$133.642

Northwest PG Solutions

USA . 447 parts In-Stock

1+ parts

$153.131

100+ parts

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447

$153.131

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Parana Technologies

USA . 1,829 parts In-Stock

1+ parts

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100+ parts

$0.107

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1,829

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$0.107

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Corphita

USA . 221 parts In-Stock

1+ parts

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221

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Overview

Unlock unparalleled efficiency with the BYW80F-50 diode from STMicroelectronics, a leader in innovation and reliability. This exceptional rectifier diode ensures peak performance across demanding applications, delivering rapid recovery times and robust thermal stability. Its durable plastic/epoxy construction promises longevity, making it an ideal choice for power management in both industrial and consumer electronics. Elevate your projects with the unmatched quality and expertise that only STMicroelectronics can provide!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This durable material ensures reliable performance and protection against environmental factors, increasing the longevity of the diode.

Config: SINGLE

The single configuration simplifies circuit design and reduces space requirements on the PCB.

Maximum Reverse Recovery Time: 0.035 us

A low reverse recovery time enhances switching efficiency, making it suitable for high-frequency applications.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient PCB layout and better heat dissipation.

No. of Terminals: 2

With only two terminals, this diode is easy to integrate into various circuits, reducing assembly complexity.

Package Style (Meter): FLANGE MOUNT

The flange mount style provides a secure installation, ensuring stable performance in demanding applications.

Application: EFFICIENCY

Designed specifically for efficiency, this diode optimizes energy conversion and minimizes losses in power systems.

Maximum Operating Temperature: 150 °C

A high operating temperature rating enables reliable use in demanding environments, ensuring consistent performance.

Terminal Finish: MATTE TIN

The matte tin finish provides excellent corrosion resistance and improved solderability for reliable electrical connections.

Terminal Position: SINGLE

A single terminal position simplifies installation and wiring, enhancing ease of use.

Case Connection: ISOLATED

Isolated case connection minimizes the risk of ground loops and enhances safety in applications.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it effectively converts AC to DC, making it essential for power supply circuits.

Maximum Forward Voltage (VF): 1.2 V

A low forward voltage drop enhances efficiency, reducing energy losses during operation.

Maximum Output Current: 10 A

Supporting a substantial output current, this diode is ideal for high-load applications requiring reliable power delivery.

Technology: AVALANCHE

Avalanche technology enhances the diode's reliability and performance under high-stress conditions.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide robust mechanical support and are well-suited for high-power applications.

Maximum Repetitive Peak Reverse Voltage: 50 V

The ability to withstand high reverse voltages makes this diode suitable for various power applications.

Maximum Non-Repetitive Peak Forward Current: 100 A

A high non-repetitive peak forward current rating ensures robustness during transient load conditions.

Diode Element Material: SILICON

Silicon as a diode element material enhances efficiency and thermal performance, making it widely used in electronic applications.

Technical Specifications

Diodes & Rectifiers BYW80F-50 attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

FREE WHEELING DIODE

Application:

EFFICIENCY

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.2 V

JESD-30 Code:

R-PSFM-T2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

100 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

10 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

50 V

Maximum Reverse Recovery Time:

.035 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

BYW80F-50 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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