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BYW80-200

Onsemi

BYW80-200 by Onsemi

BYW80-200 by Onsemi is a single rectifier diode with a max reverse recovery time of 0.035 us and a max output current of 8A. It is designed for ultra-fast recovery power applications, operating at temperatures up to 150 °C. The diode has a peak repetitive reverse voltage of 200V and features a plastic/epoxy package body material with tin lead terminal finish.

Median Price

$0.260

Lifecycle Status

Suppliers In-Stock

36

In-Stock Inventory

1k+

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Adafruit Industries

USA . 300 parts In-Stock

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$0.110

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$0.109

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Rochester

USA . 349 parts In-Stock

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$0.260

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$0.250

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$0.250

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349

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Bürklin Elektronik

Germany . 17 parts In-Stock

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$0.540

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Digiode

USA . 4,905 parts In-Stock

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EXC GmbH

Germany . 355 parts In-Stock

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American Microsemiconductor Inc.

USA . 5 parts In-Stock

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$15.620

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LIBRA Elektronik GmbH

Germany . 34,400 parts In-Stock

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Vyrian

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Cogito LLC

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Chip Stock

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ICP Electronique

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ECAB

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Fibra_Brandt Electronic GMBH

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Kiltronic GmbH

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Freddi Giovanni

Italy . 300 parts In-Stock

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Corel Iberica Componentes, S.L.

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ComSIT Distribution GmbH

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ABC Electronics Ltd.

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PUI

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Martec Srl

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Cyclops Electronics Ltd

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LittleDiode

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Goldney Electronics S.L.

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Manotoh

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ACDS - Activité Composants Distribution Service

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IDEA Electronic Components Group

UK . 2,109 parts In-Stock

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$0.092

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$0.083

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Ampacity Inc.

Singapore . 215 parts In-Stock

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$0.093

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Corphita

USA . 2,875 parts In-Stock

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$0.099

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Corohmni

South Africa . 428 parts In-Stock

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Advanced Electronics

New Zealand . 300 parts In-Stock

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MKK Technologies

India . 88 parts In-Stock

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$0.173

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DigiPath Technology Company

USA . 88 parts In-Stock

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Native Components

USA . 134 parts In-Stock

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$8.970

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Northwest PG Solutions

USA . 1,103 parts In-Stock

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$9.867

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$8.880

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Component Stockers USA

USA . 3,592 parts In-Stock

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$14.760

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$14.020

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$13.580

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QUARKTWIN TECHNOLOGY LTD

USA . 26,054 parts In-Stock

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Kepictronics

USA . 13,000 parts In-Stock

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TANS Electronics

Latvia . 6,210 parts In-Stock

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A-Z Elektronik GmbH

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SupplyDigital Components

Austria . 3,859 parts In-Stock

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Problanco Electronics

Mexico . 2,809 parts In-Stock

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Authorized Procurement Solutions

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iodParts Technologies Inc.

India . 900 parts In-Stock

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UHIMA Technologies

Türkiye . 628 parts In-Stock

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Kulean Microsystems

USA . 618 parts In-Stock

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Perfect Parts

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Assy Fe

Spain . 520 parts In-Stock

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EMSNET (Excess)

USA . 450 parts In-Stock

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Parana Technologies

USA . 339 parts In-Stock

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Glotronic Ltd.

UK . 170 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 79 parts In-Stock

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Overview

Unleash the power of innovation with the Onsemi BYW80-200 diode rectifier. Designed for ultra fast recovery power applications, this high-quality product offers unmatched performance and reliability. With a maximum output current of 8A and a peak repetitive peak reverse voltage of 200V, the BYW80-200 is the perfect solution for your electronic needs. Trust in Onsemi's expertise and experience in manufacturing top-of-the-line diodes and rectifiers to take your projects to the next level. Experience the value and benefits that the BYW80-200 can bring to your designs today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection, making the diode long-lasting and reliable.

Maximum Reverse Recovery Time: 0.035 us

Ultra fast recovery time ensures efficient and quick operation, suitable for high-speed applications.

Maximum Operating Temperature: 150 °C

Capable of operating at high temperatures, making it suitable for various industrial environments.

Maximum Output Current: 8 A

Can handle high currents, making it suitable for power applications.

Maximum Repetitive Peak Reverse Voltage: 200 V

High reverse voltage capability makes it suitable for voltage regulation and protection applications.

Diode Element Material: SILICON

Silicon diodes offer high efficiency and reliability, making them a preferred choice for many applications.

Technical Specifications

Diodes & Rectifiers BYW80-200 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

LOW LEAKAGE CURRENT

Application:

ULTRA FAST RECOVERY POWER

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.2 V

JEDEC-95 Code:

TO-220AC

JESD-30 Code:

R-PSFM-T2

JESD-609 Code:

e0

Maximum Non Repetitive Peak Forward Current:

100 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

8 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

235

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

200 V

Maximum Reverse Recovery Time:

.035 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

BYW80-200 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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