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BYW80F-150

STMicroelectronics

BYW80F-150 by STMicroelectronics

BYW80F-150 by STMicroelectronics is a single rectifier diode designed for high efficiency applications. It features a max reverse recovery time of 0.035 µs, supports up to 10 A output current, and operates at temperatures up to 150 °C. Ideal for power management in electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,995 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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3,995

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-

-

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Anansix

USA . 1,936 parts In-Stock

1+ parts

-

100+ parts

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1,936

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Digiode

USA . 1,777 parts In-Stock

1+ parts

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1,777

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,108 parts In-Stock

1+ parts

$0.178

100+ parts

-

1k+ parts

$0.160

10k+ parts

-

1,108

$0.178

-

$0.160

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MKK Technologies

India . 533 parts In-Stock

1+ parts

$0.334

100+ parts

-

1k+ parts

-

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533

$0.334

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DigiPath Technology Company

USA . 533 parts In-Stock

1+ parts

$0.334

100+ parts

-

1k+ parts

-

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533

$0.334

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-

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Native Components

USA . 440 parts In-Stock

1+ parts

$7.272

100+ parts

-

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440

$7.272

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Corphita

USA . 1,992 parts In-Stock

1+ parts

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1,992

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Parana Technologies

USA . 490 parts In-Stock

1+ parts

-

100+ parts

$0.212

1k+ parts

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490

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$0.212

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Northwest PG Solutions

USA . 45 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$7.127

10k+ parts

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45

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$7.127

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Overview

Elevate your projects with the BYW80F-150 from STMicroelectronics, a top-tier rectifier diode designed for efficiency and reliability. Renowned for their innovative technology, STMicroelectronics delivers unparalleled quality, ensuring your applications perform flawlessly under pressure. With outstanding thermal performance and robust current handling, this diode is perfect for demanding environments, offering seamless integration into power management systems, automotive solutions, and more. Choose BYW80F-150 for superior value and lasting performance!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This durable material enhances protection against environmental factors, increasing the longevity and reliability of the diode.

Config: SINGLE

A single diode configuration simplifies design and reduces component count in circuits, making integration easier.

Maximum Reverse Recovery Time: 0.035 µs

A low reverse recovery time ensures faster switching speeds, improving the overall efficiency of the circuit.

Package Shape: RECTANGULAR

The rectangular shape aids in efficient space utilization on printed circuit boards (PCBs), enabling compact designs.

No. of Terminals: 2

With only two terminals, this diode is straightforward to connect and implement in various applications.

Package Style (Meter): FLANGE MOUNT

Flange mounting adds stability and ease of attachment, which is beneficial in more permanent installations.

Application: EFFICIENCY

Designed for efficient performance, this diode is ideal for applications that require optimum power consumption.

Maximum Operating Temperature: 150 °C

A high operating temperature allows for use in demanding environments without compromising performance.

Terminal Finish: MATTE TIN

The matte tin finish provides good solderability, ensuring reliable connections in various assembly processes.

Terminal Position: SINGLE

A single terminal position promotes simplified layout and design in circuit boards.

Case Connection: ISOLATED

Isolated case connection improves safety by minimizing the risk of short circuits during operation.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it is specifically designed for converting alternating current (AC) to direct current (DC), making it essential for power supply applications.

Maximum Forward Voltage (VF): 1.2 V

The low forward voltage ensures minimal energy loss during operation, contributing to higher overall energy efficiency.

Maximum Output Current: 10 A

Handles up to 10 A of output current, making it suitable for high-power applications without overheating.

Technology: AVALANCHE

Utilizing avalanche technology enhances the diode's performance under reverse conditions, preventing breakdown and failure.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide robust mechanical support and are easy to solder, ensuring strong electrical connections.

Maximum Repetitive Peak Reverse Voltage: 150 V

A high voltage rating makes it capable of withstanding significant reverse voltages, enhancing reliability in power circuits.

Maximum Non Repetitive Peak Forward Current: 100 A

Withstanding peak currents up to 100 A allows for handling high transient loads, contributing to the robustness of the component.

Diode Element Material: SILICON

Silicon is an industry-standard material due to its excellent electrical properties and thermal conductivity, ensuring reliable performance.

Technical Specifications

Diodes & Rectifiers BYW80F-150 attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

FREE WHEELING DIODE

Application:

EFFICIENCY

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.2 V

JESD-30 Code:

R-PSFM-T2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

100 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

10 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

150 V

Maximum Reverse Recovery Time:

.035 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

BYW80F-150 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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