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BYW80-50

STMicroelectronics

BYW80-50 by STMicroelectronics

BYW80-50 by STMicroelectronics is a single rectifier diode designed for high efficiency applications. It features a max reverse recovery time of 0.035 µs, operates at up to 150 °C, and supports a peak reverse voltage of 50 V with a forward current of 10 A. Ideal for power management in electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 4,410 parts In-Stock

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Digiode

USA . 3,087 parts In-Stock

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Anansix

USA . 1,555 parts In-Stock

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1,555

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ComSIT Distribution GmbH

Germany . 988 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 19 parts In-Stock

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Fibra_Brandt Electronic GMBH

Germany . 11 parts In-Stock

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LittleDiode

UK . 8 parts In-Stock

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GES GmbH

Germany . 5 parts In-Stock

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ECAB

Sweden . 1 parts In-Stock

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IDEA Electronic Components Group

UK . 1,694 parts In-Stock

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$0.028

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$0.025

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1,694

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MKK Technologies

India . 931 parts In-Stock

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$0.052

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931

$0.052

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DigiPath Technology Company

USA . 931 parts In-Stock

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$0.052

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$0.052

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Native Components

USA . 241 parts In-Stock

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$9.408

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Northwest PG Solutions

USA . 49 parts In-Stock

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$10.349

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$9.314

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49

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Corphita

USA . 1,471 parts In-Stock

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Parana Technologies

USA . 189 parts In-Stock

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$0.033

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Assy Fe

Spain . 65 parts In-Stock

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Overview

Unlock unparalleled efficiency with the BYW80-50 from STMicroelectronics—a trusted leader in innovative electronic components. Designed for superior performance in demanding applications, this rectifier diode delivers swift recovery and robust reliability, making it ideal for power conversion and energy management. With a compact and durable package, it effortlessly integrates into diverse systems, providing exceptional value and long-lasting benefits for your projects. Experience the quality you can trust!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides excellent durability and resistance to environmental factors, making this diode suitable for various applications.

Config: SINGLE

A single configuration simplifies the design and integration process for users looking for a straightforward solution.

Maximum Reverse Recovery Time: 0.035 us

A low reverse recovery time enhances switching efficiency, making this rectifier ideal for high-frequency applications.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient use of PCB space and better thermal management within the circuit.

No. of Terminals: 2

Having two terminals provides straightforward connectivity and simplifies circuit design.

Package Style (Meter): FLANGE MOUNT

Flange mounting offers robust mechanical stability and facilitates heat dissipation, contributing to improved reliability.

Application: EFFICIENCY

Designed for efficiency, this product is perfect for applications where power loss needs to be minimized.

Maximum Operating Temperature: 150 °C

A high maximum operating temperature allows this diode to function in a wide range of environments, ensuring reliability in demanding conditions.

Terminal Finish: MATTE TIN

The matte tin finish enhances solderability, ensuring reliable connections in assembly processes.

Terminal Position: SINGLE

Single terminal positioning provides ease of installation and makes it user-friendly for designers.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it is specifically designed to convert AC to DC efficiently, making it suitable for power supply applications.

Maximum Forward Voltage (VF): 1.2 V

A low forward voltage offers minimal power loss during operation, enhancing overall circuit efficiency.

Maximum Output Current: 10 A

A maximum output current of 10 A indicates the diode's capability to handle substantial loads, making it suitable for various applications.

Technology: AVALANCHE

Utilizing avalanche technology allows for high voltage operation and enhanced performance in demanding applications.

Terminal Form: THROUGH-HOLE

Through-hole design provides excellent mechanical strength and stability, ensuring reliable performance in various mounting conditions.

Maximum Repetitive Peak Reverse Voltage: 50 V

A peak reverse voltage of 50 V makes this diode suitable for applications that require handling substantial voltage spikes.

Maximum Non-Repetitive Peak Forward Current: 100 A

The ability to handle high peak forward currents allows for versatility in demanding applications and protects the circuit from overload.

Diode Element Material: SILICON

Silicon as a diode element material ensures a balance of performance, reliability, and cost-effectiveness in various applications.

Technical Specifications

Diodes & Rectifiers BYW80-50 attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

FREE WHEELING DIODE

Application:

EFFICIENCY

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.2 V

JESD-30 Code:

R-PSFM-T2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

100 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

10 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

50 V

Maximum Reverse Recovery Time:

.035 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

BYW80-50 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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