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BYW80-100

STMicroelectronics

BYW80-100 by STMicroelectronics

BYW80-100 by STMicroelectronics is a single rectifier diode designed for high efficiency applications. It features a max reverse recovery time of 0.035 µs, operates at up to 150 °C, and handles currents up to 10 A with a peak reverse voltage of 100 V. Ideal for power management in various electronic devices.

Median Price

$0.277

Lifecycle Status

Suppliers In-Stock

15

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 360 parts In-Stock

1+ parts

-

100+ parts

$0.277

1k+ parts

$0.230

10k+ parts

$0.205

360

-

$0.277

$0.230

$0.205

Distributors (In-Stock)

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Digiode

USA . 3,365 parts In-Stock

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$0.217

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3,365

$0.217

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Vyrian

USA . 8,668 parts In-Stock

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8,668

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Anansix

USA . 1,459 parts In-Stock

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1,459

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ACDS - Activité Composants Distribution Service

France . 1,141 parts In-Stock

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1,141

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Prism Electronics

USA . 718 parts In-Stock

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718

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Fibra_Brandt Electronic GMBH

Germany . 509 parts In-Stock

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509

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ECAB

Sweden . 193 parts In-Stock

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193

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ComSIT Distribution GmbH

Germany . 188 parts In-Stock

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Bristol Electronics

USA . 171 parts In-Stock

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Atlantic Semiconductor

USA . 171 parts In-Stock

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LWI Electronics Inc

India . 95 parts In-Stock

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95

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ABC Electronics Ltd.

UK . 77 parts In-Stock

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MISTER SPROCKETS

USA . 50 parts In-Stock

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50

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Semi Source

USA . 10 parts In-Stock

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10

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 2,257 parts In-Stock

1+ parts

$0.179

100+ parts

-

1k+ parts

$0.161

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2,257

$0.179

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$0.161

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Corphita

USA . 4,129 parts In-Stock

1+ parts

$0.205

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4,129

$0.205

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MKK Technologies

India . 979 parts In-Stock

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$0.337

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979

$0.337

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DigiPath Technology Company

USA . 979 parts In-Stock

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$0.337

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979

$0.337

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Native Components

USA . 403 parts In-Stock

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$67.740

100+ parts

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$65.030

403

$67.740

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$65.030

Northwest PG Solutions

USA . 554 parts In-Stock

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$74.514

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554

$74.514

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QUARKTWIN TECHNOLOGY LTD

USA . 4,958 parts In-Stock

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Assy Fe

Spain . 3,700 parts In-Stock

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Perfect Parts

USA . 2,556 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 1,935 parts In-Stock

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1,935

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Parana Technologies

USA . 1,421 parts In-Stock

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$0.214

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1,421

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$0.214

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Overview

Elevate your applications with the BYW80-100 diode by STMicroelectronics, where reliability meets performance. Designed for efficiency in demanding environments, this rectifier diode ensures superior thermal management and swift recovery times. With a robust design tailored for diverse uses, from power supplies to industrial devices, it guarantees peace of mind and long-lasting operation. Trust STMicroelectronics’ legacy of innovation to enhance your projects today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material offers good thermal stability and protection against environmental factors, making this diode suitable for a variety of applications.

Config: SINGLE

A single configuration simplifies incorporation into circuits, ensuring efficient design without unnecessary complexity.

Maximum Reverse Recovery Time: 0.035 µs

A low reverse recovery time enhances the diode's efficiency in high-speed applications, reducing energy losses and improving overall performance.

Package Shape: RECTANGULAR

The rectangular shape allows for easier placement and mounting on PCBs, facilitating streamlined assembly and space optimization.

No. of Terminals: 2

Having only two terminals simplifies connections, which can reduce assembly time and errors in circuit design.

Package Style (Meter): FLANGE MOUNT

Flange mount design ensures secure attachment to heat sinks or mounting surfaces, providing reliable thermal management for prolonged diode life.

Application: EFFICIENCY

Designed for efficiency, this diode's specifications are optimized for minimal power loss, making it ideal for energy-conscious applications.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows for usage in demanding environments, increasing design flexibility for various applications.

Minimum Operating Temperature: -65 °C

With a wide temperature range, this diode can function reliably in extreme conditions, ensuring stability in diverse settings.

Terminal Finish: TIN LEAD

The tin lead finish promotes good solderability, enhancing the reliability and longevity of connections in electronic assemblies.

Terminal Position: SINGLE

Having a single terminal position simplifies layout alignment in circuit designs, contributing to ease of use and reliability.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it efficiently converts AC to DC, making it a crucial component for power conversion applications.

Maximum Forward Voltage (VF): 1.2 V

A low forward voltage drop leads to reduced energy losses during operation, enhancing overall circuit efficiency.

Maximum Output Current: 10 A

The ability to handle high output current makes this diode suitable for applications that require significant power handling.

Technology: AVALANCHE

Avalanche technology provides reliable operation in high-voltage scenarios, ensuring protection against breakdown and enhancing durability.

Terminal Form: THROUGH-HOLE

Through-hole construction is robust and easy to work with, providing solid mechanical connections and good thermal performance.

Maximum Repetitive Peak Reverse Voltage: 100 V

A high voltage rating allows this diode to operate safely in circuits with significant voltage demands, providing reliability and performance.

Maximum Non-Repetitive Peak Forward Current: 100 A

The capability to handle high peak currents makes this diode suitable for applications subject to transient spikes, ensuring durability under stress.

Diode Element Material: SILICON

Silicon-based diodes offer excellent electrical characteristics, reliability, and are commonly used, making them a trusted choice for engineers.

Technical Specifications

Diodes & Rectifiers BYW80-100 attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

FREE WHEELING DIODE

Application:

EFFICIENCY

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.2 V

JESD-30 Code:

R-PSFM-T2

JESD-609 Code:

e0

Maximum Non Repetitive Peak Forward Current:

100 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

10 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

100 V

Maximum Reverse Recovery Time:

.035 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

AVALANCHE

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

BYW80-100 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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