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BYW80FP-200

STMicroelectronics

BYW80FP-200 by STMicroelectronics

BYW80FP-200 by STMicroelectronics is a single rectifier diode designed for high efficiency applications. It features a max reverse recovery time of 0.035 µs, supports up to 10 A output current, and operates at temperatures up to 150 °C. Ideal for power management in electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,525 parts In-Stock

1+ parts

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6,525

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Digiode

USA . 3,275 parts In-Stock

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3,275

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Anansix

USA . 686 parts In-Stock

1+ parts

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686

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Prism Electronics

USA . 6 parts In-Stock

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6

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,984 parts In-Stock

1+ parts

$0.029

100+ parts

-

1k+ parts

$0.026

10k+ parts

-

1,984

$0.029

-

$0.026

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MKK Technologies

India . 567 parts In-Stock

1+ parts

$0.054

100+ parts

-

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567

$0.054

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DigiPath Technology Company

USA . 567 parts In-Stock

1+ parts

$0.054

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-

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567

$0.054

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AZTECH Wire

Italy . 979 parts In-Stock

1+ parts

$17.330

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979

$17.330

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Native Components

USA . 119 parts In-Stock

1+ parts

$49.925

100+ parts

-

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$47.928

119

$49.925

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$47.928

Northwest PG Solutions

USA . 2,350 parts In-Stock

1+ parts

$54.917

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2,350

$54.917

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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56,986

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QUARKTWIN TECHNOLOGY LTD

USA . 18,252 parts In-Stock

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Kepictronics

USA . 13,000 parts In-Stock

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13,000

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Perfect Parts

USA . 560 parts In-Stock

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560

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Parana Technologies

USA . 202 parts In-Stock

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$0.034

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202

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$0.034

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Corphita

USA . 98 parts In-Stock

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98

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Overview

Unlock the power of reliability with the BYW80FP-200 from STMicroelectronics, a leader in semiconductor innovation. This rectifier diode boasts exceptional efficiency, perfect for a diverse range of applications, from power supplies to automotive circuits. Crafted from high-quality materials and designed for optimal performance, it ensures durability and minimal downtime. Choose STMicroelectronics for unmatched quality and experience the benefits of superior reliability and efficiency in your projects!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material offers excellent durability and resistance to environmental factors, ensuring long-term reliable performance in various applications.

Config: SINGLE

A single configuration simplifies the circuit design while still delivering essential rectification functions efficiently.

Maximum Reverse Recovery Time: 0.035 us

A short reverse recovery time enhances the efficiency and speed of the diode, making it suitable for high-frequency applications.

Package Shape: RECTANGULAR

The rectangular shape allows for easy integration into a variety of PCB layouts, optimizing space and connectivity.

No. of Terminals: 2

With two terminals, the diode provides straightforward connectivity and functionality for basic rectification tasks.

Package Style (Meter): FLANGE MOUNT

Flange mount design supports secure installation and helps maintain stable performance, even in demanding applications.

Application: EFFICIENCY

Designed for high efficiency, this diode minimizes energy loss, contributing to enhanced overall system performance.

Maximum Operating Temperature: 150 °C

High operating temperature tolerance allows the diode to function reliably in extreme conditions, increasing its versatility in applications.

Terminal Finish: MATTE TIN

The matte tin finish ensures good solderability and corrosion resistance, enhancing the longevity of the diode in circuit assemblies.

Terminal Position: SINGLE

A single terminal position minimizes layout complexity and facilitates easier integration into existing designs.

Case Connection: ISOLATED

Isolated case connections prevent unwanted current paths, ensuring safe and reliable operation in sensitive applications.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it effectively converts AC to DC, making it essential for power supply and rectification applications.

Maximum Forward Voltage (VF): 0.85 V

A low forward voltage drop helps enhance energy efficiency by minimizing power losses during operation.

Maximum Output Current: 10 A

Supporting a high output current allows this diode to handle demanding electrical loads, making it ideal for robust applications.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide reliable mechanical and electrical connections, particularly beneficial in high-stress environments.

Maximum Repetitive Peak Reverse Voltage: 200 V

A high reverse voltage rating ensures the diode can withstand significant voltage reversals, adding protection in various circuits.

Maximum Non Repetitive Peak Forward Current: 100 A

This capability allows the diode to handle surges and peaks, which is critical in protecting the circuit during transient events.

Diode Element Material: SILICON

Silicon material contributes to the performance and reliability of diodes, allowing for efficient current flow and temperature tolerance.

Technical Specifications

Diodes & Rectifiers BYW80FP-200 attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

FREE WHEELING DIODE

Application:

EFFICIENCY

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.85 V

JEDEC-95 Code:

TO-220AC

JESD-30 Code:

R-PSFM-T2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

100 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

10 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

200 V

Maximum Reverse Recovery Time:

.035 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

BYW80FP-200 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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