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BTB16-700CWRG

STMicroelectronics

BTB16-700CWRG by STMicroelectronics

BTB16-700CWRG by STMicroelectronics is a snubberless TRIAC designed for AC control applications. It features a max RMS on-state current of 16 A, repetitive peak off-state voltage of 700 V, and operates b/w -40 °C to 125 °C. Ideal for lighting and motor control systems.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 9,639 parts In-Stock

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9,639

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Anansix

USA . 2,071 parts In-Stock

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Digiode

USA . 1,567 parts In-Stock

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1,567

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Distributors (Availability)

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Corohmni

South Africa . 203 parts In-Stock

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$3.595

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203

$3.595

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Advanced Electronics

New Zealand . 20 parts In-Stock

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$3.781

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$3.441

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$3.100

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20

$3.781

$3.441

$3.100

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IDEA Electronic Components Group

UK . 1,094 parts In-Stock

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$4.061

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$3.655

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1,094

$4.061

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MKK Technologies

India . 263 parts In-Stock

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$7.636

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$7.636

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DigiPath Technology Company

USA . 263 parts In-Stock

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$7.636

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263

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Native Components

USA . 519 parts In-Stock

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$9.921

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519

$9.921

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Northwest PG Solutions

USA . 674 parts In-Stock

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$10.913

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$9.822

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674

$10.913

$9.822

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AZTECH Wire

Italy . 269 parts In-Stock

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$12.300

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QUARKTWIN TECHNOLOGY LTD

USA . 16,031 parts In-Stock

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Corphita

USA . 4,955 parts In-Stock

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Parana Technologies

USA . 1,933 parts In-Stock

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$4.855

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$4.855

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Overview

Unlock the power of efficiency with the BTB16-700CWRG from STMicroelectronics, a leading name in semiconductor innovation. This snubberless TRIAC is designed to deliver unparalleled performance in AC switching applications, boasting high reliability and minimal leakage current. Its robust plastic/epoxy construction ensures durability across diverse operating environments. Elevate your designs with a component that combines quality, versatility, and exceptional value, making it the ideal choice for advanced electrical solutions.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material enhances durability and insulation, making it suitable for a variety of environments.

Maximum DC Gate Trigger Current: 35 mA

A maximum gate trigger current of 35 mA ensures compatibility with a wide range of control circuits, facilitating easier integration.

Configuration: SINGLE

The single configuration allows for simplified circuit designs, making it convenient for applications requiring straightforward compatibility.

Package Shape: RECTANGULAR

The rectangular package shape aids in efficient space utilization on circuit boards, providing flexibility in design layout.

Terminal Form: THROUGH-HOLE

Through-hole terminals enhance mechanical stability and ease of soldering, improving reliability in high-vibration applications.

Maximum Leakage Current: 2 mA

A low maximum leakage current of 2 mA minimizes power losses, enhancing overall efficiency in AC applications.

No. of Terminals: 3

Three terminals allow for versatile connections, enabling simpler circuit designs and a variety of operational configurations.

Package Style (Meter): FLANGE MOUNT

Flange mount design promotes easy installation and secure mounting in various electronic applications.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature of 125 °C, this TRIAC can function reliably in demanding thermal environments.

Trigger Device Type: SNUBBERLESS TRIAC

Being a snubberless TRIAC provides efficient operation without the need for additional snubber circuitry, simplifying design.

Minimum Operating Temperature: -40 °C

A minimum operating temperature of -40 °C allows for reliable performance in harsh, low-temperature environments.

Terminal Finish: MATTE TIN

Matte tin terminal finish offers excellent solderability and corrosion resistance, ensuring longevity and reliability.

Terminal Position: SINGLE

Single terminal position simplifies layout and design considerations, making it easier for engineers to integrate into systems.

Maximum RMS On-state Current: 16 A

The capability of handling 16 A RMS on-state current makes this TRIAC suitable for high-power applications.

Maximum DC Gate Trigger Voltage: 1.3 V

A low trigger voltage of 1.3 V enhances the TRIAC's efficiency, requiring less energy to activate, thus saving resources.

Case Connection: MAIN TERMINAL 2

Main terminal connection supports standard practices in circuit configurations, making it easy to integrate into existing systems.

Repetitive Peak Off-state Voltage: 700 V

With a high off-state voltage rating of 700 V, this TRIAC is ideal for use in high-voltage applications, enhancing versatility.

Minimum Critical Rate of Rise of Off-state Voltage: 500 V/us

A minimum critical rate of rise ensures robustness against voltage spikes, providing reliability and stability in operation.

Maximum Holding Current: 35 mA

A maximum holding current of 35 mA allows the TRIAC to maintain its conductive state with minimal control power, increasing efficiency.

Technical Specifications

Triode For Alternating Current (TRIAC) BTB16-700CWRG attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from STMicroelectronics

Specs

Case Connection:

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

500 V/us

Maximum DC Gate Trigger Current:

35 mA

Maximum DC Gate Trigger Voltage:

1.3 V

Maximum Holding Current:

35 mA

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Leakage Current:

2 mA

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

16 A

Repetitive Peak Off-state Voltage:

700 V

Sub-Category:

TRIACs

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

Trade Compliance

BTB16-700CWRG Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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