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JANTXV2N4957UB

Semicoa

JANTXV2N4957UB by Semicoa

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 1200 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .03 A;

Median Price

-

Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 307 parts In-Stock

1+ parts

$24.050

100+ parts

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1k+ parts

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307

$24.050

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Component Stockers USA

USA . 403 parts In-Stock

1+ parts

$99.990

100+ parts

-

1k+ parts

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10k+ parts

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403

$99.990

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QUARKTWIN TECHNOLOGY LTD

USA . 10,068 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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10,068

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Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) JANTXV2N4957UB attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Semicoa

Specs

Additional Features:

LOW NOISE

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

.8 pF

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

20

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

R-CDSO-N3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

200 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Qualified

Reference Standard:

MIL-19500/426

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Form:

NO LEAD

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

JANTXV2N4957UB Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Semicoa

Trusted Everywhere for Mission Success is our commitment statement to our customers. This means the Semicoa Team operates as one to ensure the product exceeds expectation. SEMICOA is a leader in the design and development of bipolar power devices for high-reliability military, defense, aerospace, and space applications. Quality and high reliability are cornerstones upon which space, military, and aerospace applications are built. In many instances, there is absolutely no room for error. These critical industries require a partner that they can trust to deliver time after time. For 50 years, SEMICOA has been Trusted Everywhere. Semicoa specializes in the manufacture of discrete silicon semiconductors focusing on small signal transistors for space, military, and aerospace industries globally. The design, development and wafer fabrication operations are located in Southern California. The company achieved the highest U.S. government qualification (JANS, MIL-PRF-19500, Space Level) for the production of electronic components and it is AS9100:2009D certified. Semicoa is ITAR registered. Semicoa is also an active member of the JEDEC Community. Its leading edge manufacturing facility performs discrete and hybrid assembly utilizing innovative techniques and processes. High volume production is performed on dedicated assembly lines to reduce cost and increase throughput. Semicoa constantly expands product, equipment and production capabilities to meet the growing demand of its customers for high reliability and Rad Hard products.

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