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2SK1183

Sanken Electric

2SK1183 by Sanken Electric

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Drain Current (ID): 3 A; JEDEC-95 Code: TO-220AB; Minimum DS Breakdown Voltage: 200 V;

Median Price

-

Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Technical Specifications

Power Field Effect Transistors (FET) 2SK1183 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Sanken Electric

Specs

Avalanche Energy Rating (EAS):

30 mJ

Case Connection:

ISOLATED

Configuration:

Minimum DS Breakdown Voltage:

200 V

Maximum Drain Current (ID):

3 A

Maximum Drain-Source On Resistance:

1.5 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

12 A

Qualification:

Not Qualified

Reference Standard:

UL APPROVED

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Element Material:

SILICON

Trade Compliance

2SK1183 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Sanken Electric

In 1937, as part of the 50th anniversary project of the former Toho Electric Power Co., Ltd., the Toho Industrial Research Institute was invited by the late Yasuzaemon Matsunaga, president of the company at the time, to develop industries that would actually benefit society. It was created with the intention of doing In 1946, the late Tetsuji Kotani, chief of the semiconductor research laboratory at the same research institute, established Toho Sanken Denki Co., Ltd., taking over the engineers and equipment of the research institute, which was dissolved after the end of the war. In 1962, the company name was changed to the current name, Sanken Electric Co., Ltd. Founded a factory specializing in semiconductors with the results of cuprous oxide and selenium rectifiers that have continued since the laboratory days. In 1958, we succeeded in making prototypes of thermal diffusion silicon diodes, which were groundbreaking in the world at the time, followed by silicon power transistors. Since then, we have grown together with the electronics industry, established a solid position as a manufacturer in the power electronics field, and grasped the changes of the times. We have provided solutions. We have been and will continue to supply unique and advanced products and strive to be a prominent innovator in the field of power electronics.

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