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RSF015N06TL

ROHM

RSF015N06TL by ROHM

ROHM's RSF015N06TL is an N-CHANNEL FET with 60V DS breakdown voltage and 1.5A max drain current. Ideal for switching applications, it features a 0.35 ohm on-resistance and operates in enhancement mode. The small outline package with flat terminals makes it suitable for surface mount designs.

Median Price

$0.500

Lifecycle Status

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11

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1k+

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Newark

USA . 17,985 parts In-Stock

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$0.495

100+ parts

$0.223

1k+ parts

$0.132

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17,985

$0.495

$0.223

$0.132

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Chip1Stop

Japan . 5,576 parts In-Stock

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$0.508

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$0.508

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DigiKey

USA . 9,203 parts In-Stock

1+ parts

$0.680

100+ parts

$0.271

1k+ parts

$0.185

10k+ parts

$0.137

9,203

$0.680

$0.271

$0.185

$0.137

Mouser Electronics

USA . 35 parts In-Stock

1+ parts

$0.680

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$0.271

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$0.185

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$0.135

35

$0.680

$0.271

$0.185

$0.135

Farnell

UK . 21,845 parts In-Stock

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-

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$0.260

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$0.166

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$0.162

21,845

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$0.260

$0.166

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Element14

Singapore . 21,845 parts In-Stock

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$0.271

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$0.172

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$0.169

21,845

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$0.271

$0.172

$0.169

Verical

USA . 1,884 parts In-Stock

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$0.500

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1,884

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$0.500

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Nova Conductors

Japan . 300 parts In-Stock

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$0.172

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300

$0.172

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Vyrian

USA . 16,485 parts In-Stock

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Bristol Electronics

USA . 2,320 parts In-Stock

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$0.352

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$0.141

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2,320

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Dan-Mar Components

USA . 2,320 parts In-Stock

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Ampacity Inc.

Singapore . 15,637 parts In-Stock

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$0.105

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Aranea Global

USA . 100 parts In-Stock

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$0.169

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$0.162

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100

$0.169

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$0.162

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CoreStaff

Japan . 4,776 parts In-Stock

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$0.391

100+ parts

$0.204

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$0.150

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4,776

$0.391

$0.204

$0.150

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Continental Prestige Electronics

USA . 38,885 parts In-Stock

1+ parts

$0.400

100+ parts

$0.224

1k+ parts

$0.140

10k+ parts

$0.122

38,885

$0.400

$0.224

$0.140

$0.122

Argo Parts USA

USA . 4,664 parts In-Stock

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Kepictronics

USA . 3,000 parts In-Stock

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Overview

Enhance your electronic projects with the RSF015N06TL by ROHM, a top-quality Small Signal Field Effect Transistor offering reliable performance and durability. With ROHM's reputation for excellence in semiconductor manufacturing, you can trust that this N-channel transistor will exceed your expectations. Ideal for switching applications, this transistor features a built-in diode and operates in enhancement mode, making it versatile for a wide range of projects. Upgrade your circuit designs with the RSF015N06TL and experience the superior value and benefits it brings to your creations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides good insulation and protection for the transistor, making it reliable and durable.

Polarity or Channel Type: N-CHANNEL

N-channel transistors typically have better performance characteristics than P-channel transistors, making this product a better choice for many applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for more efficient switching and can protect the transistor from reverse currents, enhancing its performance and reliability.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast response times and low power consumption, making it ideal for various electronic circuits.

Surface Mount: YES

Surface mount technology makes it easier to integrate this transistor into compact circuit designs, saving space and improving overall efficiency.

Minimum DS Breakdown Voltage: 60 V

With a high breakdown voltage, this transistor can withstand higher voltages and provide better protection against electrical overloads.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high performance, low power consumption, and excellent reliability, making this transistor a top choice for many applications.

Maximum Drain Current (ID): 1.5 A

With a high maximum drain current, this transistor can handle larger loads and provide more flexibility in circuit design.

Maximum Drain-Source On Resistance: 0.35 ohm

The low on resistance of this transistor results in minimal power loss and improved efficiency, making it suitable for high-performance applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) RSF015N06TL attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from ROHM

Specs

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (ID):

1.5 A

Maximum Drain-Source On Resistance:

.35 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-F3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

RSF015N06TL Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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