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RSF014N03TL

ROHM

RSF014N03TL by ROHM

ROHM's RSF014N03TL is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max ID of 1.4A, 0.38 ohm Drain-Source On Resistance, and operates in ENHANCEMENT MODE. With a small outline package style and peak reflow temp of 260°C, it offers high performance in compact designs.

Median Price

$0.632

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DigiKey

USA . 8,127 parts In-Stock

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$0.910

100+ parts

$0.369

1k+ parts

$0.256

10k+ parts

$0.194

8,127

$0.910

$0.369

$0.256

$0.194

Mouser Electronics

USA . 4,619 parts In-Stock

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$0.910

100+ parts

$0.369

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$0.256

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$0.202

4,619

$0.910

$0.369

$0.256

$0.202

Chip1Stop

Japan . 3,592 parts In-Stock

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-

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$0.354

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$0.241

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$0.190

3,592

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Verical

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$0.237

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2,490

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IBS Electronics

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$0.143

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NAC Semi

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$0.258

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$0.258

ACDS - Activité Composants Distribution Service

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Nova Conductors

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Ampacity Inc.

Singapore . 3,776 parts In-Stock

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CoreStaff

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$0.333

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Perfect Parts

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Overview

Looking for a reliable Small Signal Field Effect Transistor (FET)? Look no further than the RSF014N03TL by ROHM. With a durable plastic/epoxy package body and N-channel configuration, this transistor is perfect for switching applications. Its single design with built-in diode offers convenience and efficiency. Trust in ROHM's reputation for quality and innovation. Upgrade your electronics with the RSF014N03TL for enhanced performance and reliability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body ensures durability and reliability of the FET in various operating conditions.

Polarity or Channel Type: N-CHANNEL

N-channel FETs generally have higher mobility and faster switching speed compared to P-channel FETs, making them suitable for high-speed switching applications.

Minimum DS Breakdown Voltage: 30 V

The minimum breakdown voltage of 30V ensures that the FET can handle higher voltages without breakdown, making it suitable for switching applications in various circuits.

Maximum Drain Current (Abs) (ID): 1.4 A

With a maximum drain current of 1.4A, this FET can handle higher current loads, making it suitable for applications where higher current handling capability is required.

Maximum Power Dissipation (Abs): 0.8 W

The maximum power dissipation of 0.8W indicates the FET's ability to dissipate heat effectively, ensuring stable and reliable performance in high-power applications.

Maximum Operating Temperature: 150 °C

The FET can operate effectively at temperatures up to 150°C, making it suitable for use in harsh environment applications where temperature can vary.

Technical Specifications

Small Signal Field Effect Transistors (FET) RSF014N03TL attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from ROHM

Specs

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (Abs) (ID):

1.4 A

Maximum Drain Current (ID):

1.4 A

Maximum Drain-Source On Resistance:

.38 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-F3

JESD-609 Code:

e2

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

TIN COPPER

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

RSF014N03TL Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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