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RSF010P05TL

ROHM

RSF010P05TL by ROHM

ROHM RSF010P05TL is a P-CHANNEL FET with 45V DS breakdown voltage and 1A max drain current. Ideal for switching applications, it features a single configuration with built-in diode in a small outline package. Operating in enhancement mode, it has 0.46 ohm max drain-source resistance and can withstand up to 260°C peak reflow temperature.

Median Price

$0.552

Lifecycle Status

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12

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1k+

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Chip1Stop

Japan . 28,724 parts In-Stock

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$0.676

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$0.676

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Mouser Electronics

USA . 75 parts In-Stock

1+ parts

$0.720

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$0.291

1k+ parts

$0.196

10k+ parts

$0.148

75

$0.720

$0.291

$0.196

$0.148

DigiKey

USA . 17 parts In-Stock

1+ parts

$0.730

100+ parts

$0.290

1k+ parts

$0.199

10k+ parts

$0.148

17

$0.730

$0.290

$0.199

$0.148

Newark

USA . 401 parts In-Stock

1+ parts

$0.981

100+ parts

$0.442

1k+ parts

$0.261

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401

$0.981

$0.442

$0.261

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Verical

USA . 3,978 parts In-Stock

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$0.272

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$0.264

3,978

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$0.272

$0.264

RS (Exports)

UK . 2,900 parts In-Stock

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$0.108

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$0.284

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$0.265

2,900

-

$0.108

$0.284

$0.265

Farnell

UK . 501 parts In-Stock

1+ parts

-

100+ parts

$0.247

1k+ parts

$0.166

10k+ parts

$0.144

501

-

$0.247

$0.166

$0.144

Element14

Singapore . 501 parts In-Stock

1+ parts

-

100+ parts

$0.428

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$0.295

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501

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$0.428

$0.295

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Rutronik

Germany . 9,000 parts In-Stock

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$0.169

9,000

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$0.169

Cyclops Electronics Ltd

UK . 6,000 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 709 parts In-Stock

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Nova Conductors

Japan . 150 parts In-Stock

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Ampacity Inc.

Singapore . 13,340 parts In-Stock

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$0.092

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$0.092

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CoreStaff

Japan . 5,802 parts In-Stock

1+ parts

$0.390

100+ parts

$0.203

1k+ parts

$0.150

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5,802

$0.390

$0.203

$0.150

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Advanced Electronics

New Zealand . 81 parts In-Stock

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$1.053

100+ parts

$0.958

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$0.863

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81

$1.053

$0.958

$0.863

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RC Electronics

USA . 82,458 parts In-Stock

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$0.200

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$0.180

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$0.170

82,458

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$0.170

Authorized Procurement Solutions

USA . 18,000 parts In-Stock

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Epart123

USA . 9,000 parts In-Stock

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$0.150

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$0.150

GreenTree Electronics

Israel . 6,000 parts In-Stock

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Continental Prestige Electronics

USA . 2,226 parts In-Stock

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$0.187

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$0.114

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$0.088

2,226

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$0.187

$0.114

$0.088

Kepictronics

USA . 1,670 parts In-Stock

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1,670

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Perfect Parts

USA . 112 parts In-Stock

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Aranea Global

USA . 50 parts In-Stock

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Overview

Unleash the power of cutting-edge technology with the RSF010P05TL by ROHM. This small signal field effect transistor offers unmatched quality and reliability, thanks to ROHM's reputation as a leading manufacturer in the industry. Ideal for switching applications, this P-channel transistor provides seamless operation and enhanced performance. With its built-in diode and high power dissipation capabilities, the RSF010P05TL delivers unparalleled value and efficiency to customers. Experience the advantages of ROHM's advanced technology with this innovative transistor.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: P-CHANNEL

P-channel transistors typically have lower ON-resistance, higher current capability, and better thermal stability compared to N-channel transistors.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for efficient switching and protection against reverse voltage, enhancing the performance of the transistor.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable and efficient operation.

Surface Mount: YES

Easily mounted on PCBs, saving space and simplifying assembly process.

Minimum DS Breakdown Voltage: 45 V

With a high breakdown voltage, this transistor can handle higher voltages without breakdown or damage.

Maximum Drain Current (Abs) (ID): 1 A

Capable of handling relatively high drain currents, allowing for a wide range of applications.

Maximum Power Dissipation (Abs): 0.8 W

Efficient power dissipation capability ensures reliable operation under various conditions.

Maximum Drain-Source On Resistance: 0.46 ohm

Low ON-resistance minimizes power loss and heat generation, improving efficiency.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without performance degradation, suitable for industrial applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) RSF010P05TL attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from ROHM

Specs

Minimum DS Breakdown Voltage:

45 V

Maximum Drain Current (Abs) (ID):

1 A

Maximum Drain Current (ID):

1 A

Maximum Drain-Source On Resistance:

.46 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-F3

JESD-609 Code:

e2

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN COPPER

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

RSF010P05TL Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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