Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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ROHM RJU002N06T106 is a N-CHANNEL FET with 60V DS breakdown voltage, 0.2A max drain current, and 3.1 ohm RDS(on). Ideal for switching applications in small outline packages with GULL WING terminals. Operating at up to 150°C, it features an enhancement mode for efficient performance.
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This material provides a durable and lightweight package for the FET, making it suitable for various applications.
N-channel FETs typically have better performance and lower on-resistance compared to P-channel FETs, making them ideal for switching applications.
With a high breakdown voltage, this FET can handle higher voltages without getting damaged, making it reliable for switching applications.
This FET can handle a maximum drain current of 0.2 A, which is suitable for low-power switching applications.
With a low power dissipation, this FET generates less heat during operation, increasing its efficiency and reliability.
Being able to operate at up to 150°C, this FET can withstand high temperatures, making it suitable for various environments.
Small Signal Field Effect Transistors (FET) RJU002N06T106 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from ROHM
Configuration:
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RJU002N06T106 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.
SN65HVD234DR
Texas Instruments
SN65HVD234DR by Texas Instruments is an 8-terminal interface circuit with a data rate of 1 Mbps. Operating temperature ranges from -40 to 125 °C, making it ideal for automotive applications. With a supply voltage of 3.3 V and low current draw of 6 mA, it's suitable for network interfaces in compact designs.
2N7002
Panjit International
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Maximum Time At Peak Reflow Temperature (s): 40; Minimum DS Breakdown Voltage: 60 V;
ABS10-32.768KHZ-T
Abracon
Abracon's ABS10-32.768KHZ-T crystal oscillator offers 20 ppm frequency tolerance, 122% stability, and 70000 ohm series resistance. Ideal for applications requiring precise timing at 0.032768 MHz, such as IoT devices and wearables due to its compact size and low power consumption.
DS18B20Z+T&R
Maxim Integrated
TEMPERATURE SENSOR,SWITCH/DIGITAL OUTPUT,SERIAL; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Shape or Style: RECTANGULAR; Minimum Operating Temperature: -55 Cel; Package Body Material: PLASTIC/EPOXY;
1N4148WS
Rugao Dachang Electronic
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LM317T
Comset Semiconductors
Other Regulators; No. of Terminals: 3; Terminal Pitch: 2.54 mm; Minimum Output Voltage-1: 1.2 V; Technology: BIPOLAR; Operating Temperature (TJ-Max): 125 Cel;
BAV99
Jiangsu Changjiang Electronics Technology
RECTIFIER DIODE; Surface Mount: YES; Maximum Forward Voltage (VF): .715 V; Maximum Operating Temperature: 150 Cel; Maximum Reverse Recovery Time: .006 us; Maximum Output Current: .2 A;
1N4148
Hitano Enterprise
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
DS18B20Z+
TEMPERATURE SENSOR,SWITCH/DIGITAL OUTPUT,SERIAL; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Shape or Style: RECTANGULAR; Body Width: 3.9 inch; Maximum Supply Voltage: 5.5 V;
Plessey Semiconductors Discrete Components Div
Other Transistors;
2N2222A
Electronic Transistors
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
BAV99WT1G
Onsemi
BAV99WT1G by Onsemi is a series connected diode with 0.006 us reverse recovery time. It is a small outline rectifier diode with 70V peak reverse voltage, ideal for surface mount applications in electronics requiring fast switching and low forward voltage drop.
Yangzhou Yangjie Electronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Terminal Form: GULL WING; Maximum Drain Current (ID): .34 A;
ROHM
1N4148WT
Formosa Microsemi
LM555CN
LM555CN by Texas Instruments is an Analog Waveform Generation IC with a supply voltage range of 4.5V to 16V. It operates b/w 0°C to 70°C, making it suitable for commercial applications. This rectangular package IC has dual terminals and uses bipolar technology for pulse generation in various electronic circuits.
Motorola
ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Package Code: TO-220; Terminal Form: THROUGH-HOLE; No. of Outputs: 1; Package Equivalence Code: SIP3,.1TB;
LL4148
Good-ark Electronics
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
Sinyork
RECTIFIER DIODE; Surface Mount: NO; Maximum Non Repetitive Peak Forward Current: .5 A; Maximum Output Current: .15 A; Maximum Repetitive Peak Reverse Voltage: 100 V; No. of Phases: 1;
Micronas Semiconductor Holding Ag
RECTIFIER DIODE; Surface Mount: YES; No. of Phases: 1; Maximum Repetitive Peak Reverse Voltage: 100 V; Maximum Output Current: .2 A; Maximum Forward Voltage (VF): 1.2 V;
ZXM61P03FTA
Zetex Plc
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .806 W; No. of Terminals: 3; JESD-609 Code: e3;
SI2333DDS-T1-GE3
Vishay Intertechnology
SI2333DDS-T1-GE3 by Vishay Intertechnology is a P-channel FET with 12V breakdown voltage and 6A drain current. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 1.7W. The transistor features a small outline package style and can withstand temperatures from -55 to 150°C.
BSS84PH6327XTSA2
Infineon Technologies
BSS84PH6327XTSA2 by Infineon is a P-CHANNEL FET with 60V DS breakdown voltage, ideal for switching applications. It features a single configuration with built-in diode and operates in enhancement mode. With a max drain current of 0.17A and on-resistance of 8 ohm, it offers reliable performance in small outline packages.
IRLML6402TRPBF-1
International Rectifier
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; No. of Elements: 1; Maximum Drain Current (Abs) (ID): 4.3 A;
2N7000TA
Fairchild Semiconductor
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; Operating Mode: ENHANCEMENT MODE; No. of Elements: 1;
NTR4171PT1G
NTR4171PT1G by Onsemi is a P-CHANNEL FET with 30V DS breakdown voltage, 2.2A max drain current, and 0.075 ohm max on resistance. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 1.25W at 150°C.
BSS308PEH6327XTSA1
BSS308PEH6327XTSA1 by Infineon Technologies is a P-CHANNEL FET with 30V DS Breakdown Voltage, 0.08 ohm RDS(on), and 2A ID. Ideal for small outline applications, it operates in enhancement mode with a max temperature of 150°C. Suitable for various electronic devices requiring high performance in compact designs.
FDN358P
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Maximum Drain Current (Abs) (ID): 1.5 A; Maximum Time At Peak Reflow Temperature (s): 30;
BSS138L
BSS138L by Onsemi is a N-CHANNEL FET with 50V DS breakdown voltage, ideal for switching applications. It features a built-in diode, operates in enhancement mode, and has a max drain current of 0.2A. With surface mount capability and small outline package style, it offers efficient performance in various electronic circuits.
BSS123
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Maximum Time At Peak Reflow Temperature (s): 40; Maximum Drain Current (Abs) (ID): .17 A;
FDV304PD87Z
Fairchild Semiconductor's FDV304PD87Z is a P-CHANNEL FET with 25V DS Breakdown Voltage, 0.46A ID, and 1.1 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at up to 150°C. The SMALL OUTLINE package features GULL WING terminals and METAL-OXIDE SEMICONDUCTOR technology.
2N7002L
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): .115 A; Operating Mode: ENHANCEMENT MODE; Terminal Finish: TIN LEAD;
BSS138WH6327XTSA1
Infineon BSS138WH6327XTSA1 is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features SINGLE configuration with BUILT-IN DIODE and operates in ENHANCEMENT MODE. With 0.5W power dissipation and -55 to 150 °C operating temperature range, it offers reliable performance in various electronic devices.
NTGS5120PT1G
NTGS5120PT1G by Onsemi is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features a single configuration with built-in diode, GULL WING terminals, and operates in ENHANCEMENT MODE. With a max ID of 2.5A and 0.111 ohm RDS(on), it offers high performance in a small outline package style.
ZXMP6A13FTA
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .625 W; No. of Terminals: 3; Minimum DS Breakdown Voltage: 60 V;
NDC7003P
NDC7003P by Onsemi is a P-CHANNEL FET with 2 elements and built-in diode, ideal for switching applications. It features a max drain current of 0.34A, operating at 150°C with a breakdown voltage of 60V. With a package style of small outline and gull wing terminals, it offers efficient performance in compact designs.
SI2308BDS-T1-E3
SI2308BDS-T1-E3 by Vishay Intertechnology is a N-CHANNEL FET for SWITCHING applications. It has a 60V DS Breakdown Voltage, 2.3A Drain Current, and 0.156 ohm On Resistance. With an Operating Temperature range of -55 to 150 °C, it is ideal for small outline surface mount designs requiring high power dissipation.
SI4909DY-T1-GE3
Vishay Siliconix
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): 8 A; Terminal Form: GULL WING; Maximum Drain-Source On Resistance: .027 ohm;
BSS138WQ-13-F
Diodes Incorporated
BSS138WQ-13-F by Diodes Inc. is a N-channel FET with 50V DS breakdown voltage, ideal for switching applications. It features single configuration with built-in diode, Gull Wing terminals, and operates in enhancement mode. With 0.2W max power dissipation and -55 to 150°C operating temp range, it's suitable for small outline SMT designs.
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Terminal Form: GULL WING; JESD-30 Code: R-PDSO-G3;
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RJU002N06FRAT106
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Form: GULL WING; Maximum Drain Current (ID): .2 A; JESD-30 Code: R-PDSO-G3;
RJU003N03FRAT106
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Elements: 1;
RJU003N03T106
ROHM's RJU003N03T106 is a small signal N-channel FET with a min DS breakdown voltage of 30V. It is used for switching applications and operates in enhancement mode. The transistor has a max drain current of 0.3A and a max drain-source on resistance of 1.9 ohm.
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