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RJU003N03T106

ROHM

RJU003N03T106 by ROHM

ROHM's RJU003N03T106 is a small signal N-channel FET with a min DS breakdown voltage of 30V. It is used for switching applications and operates in enhancement mode. The transistor has a max drain current of 0.3A and a max drain-source on resistance of 1.9 ohm.

Median Price

$0.410

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DigiKey

USA . 32,196 parts In-Stock

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$0.410

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Nova Conductors

Japan . 80 parts In-Stock

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ComSIT Distribution GmbH

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Vyrian

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Cyclops Electronics Ltd

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Rutronik

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Connector Distribution Corp

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Right Parts Inc.

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First Choice Components Inc.

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Bristol Electronics

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Dan-Mar Components

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Ampacity Inc.

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Advanced Electronics

New Zealand . 350 parts In-Stock

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RC Electronics

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Perfect Parts

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Epart123

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GreenTree Electronics

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Glotronic Ltd.

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Argo Parts USA

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Authorized Procurement Solutions

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Overview

Looking for a high-quality small signal field effect transistor that offers outstanding performance? Look no further than the RJU003N03T106 by ROHM. As a renowned manufacturer, ROHM has a reputation for excellence and this product is no exception. Ideal for switching applications, this N-channel transistor comes with a built-in diode for added convenience. With its compact package shape and surface mount capability, it offers easy integration into various electronic devices. But what sets this transistor apart is its exceptional value and benefits. With a minimum DS breakdown voltage of 30V and a maximum drain current of 0.3A, it delivers reliable and efficient operation. Plus, its low on-resistance of 1.9 ohm ensures minimal power loss. Don't compromise on quality - choose the RJU003N03T106 and experience the advantages it brings to your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material enhances the durability and reliability of the product, making it resistant to external impacts.

Polarity or Channel Type: N-CHANNEL

The N-channel polarity allows for efficient and high-performance switching operations, making this product suitable for use in various electronic applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode in this transistor provides protection against reverse currents, making it ideal for applications where reverse voltage is a concern.

Transistor Application: SWITCHING

With excellent switching characteristics, this transistor is designed specifically for switching applications, ensuring fast and efficient electrical switching.

Surface Mount: YES

The surface mount capability of this transistor simplifies the PCB design process and allows for easy and efficient assembly, making it suitable for compact and space-constrained applications.

Minimum DS Breakdown Voltage: 30 V

The minimum breakdown voltage of 30V ensures that the transistor can handle higher voltage requirements while maintaining optimal performance and reliability.

Package Shape: RECTANGULAR

The rectangular shape of the package facilitates easy integration and mounting, optimizing the space utilization on the PCB.

Terminal Form: GULL WING

The gull-wing terminal form provides strong mechanical stability and excellent solderability, minimizing the risk of connectivity issues and ensuring reliable electrical connections.

Operating Mode: ENHANCEMENT MODE

The enhancement mode operation enables precise control over the transistor's functionality, allowing for efficient amplification and signal processing.

Maximum Drain Current (Abs) (ID): 0.3 A

With a maximum drain current of 0.3A, this transistor can handle higher current loads, making it suitable for demanding applications that require high power output.

No. of Terminals: 3

The availability of three terminals in this transistor enables easy integration into various circuit designs and allows for versatile connectivity options.

Maximum Power Dissipation (Abs): 0.2 W

With a maximum power dissipation of 0.2W, this transistor can handle moderate power levels without the risk of overheating, ensuring stable operation under varying conditions.

Package Style (Meter): SMALL OUTLINE

The small outline package style offers space-saving benefits, making this transistor ideal for compact device designs without compromising on performance.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Utilizing metal-oxide semiconductor technology ensures improved electrical performance, high-speed operation, and low power consumption, making this transistor an efficient choice for various applications.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can withstand higher temperature environments, ensuring reliable performance even under demanding conditions.

Transistor Element Material: SILICON

The use of silicon as the transistor element material provides superior electrical properties, stability, and compatibility with various electronic systems, making it a reliable choice.

Terminal Finish: TIN SILVER COPPER

The tin silver copper terminal finish offers excellent solderability and corrosion resistance, ensuring long-term reliability and easy integration into electronic circuits.

Maximum Drain-Source On Resistance: 1.9 ohm

With a maximum drain-source on resistance of 1.9 ohms, this transistor minimizes power losses and provides efficient current flow during switching operations.

Terminal Position: DUAL

The dual terminal position allows for convenient connection options and enables flexible PCB layout designs, enhancing overall circuit versatility.

Maximum Time At Peak Reflow Temperature (s): 10

The maximum time at peak reflow temperature of 10 seconds ensures reliable solder joint integrity during assembly processes, minimizing the risk of component failure.

Peak Reflow Temperature °C: 260

The peak reflow temperature of 260°C ensures proper solder reflow and a strong bond between the transistor and the PCB, guaranteeing a durable and long-lasting connection.

Technical Specifications

Small Signal Field Effect Transistors (FET) RJU003N03T106 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from ROHM

Specs

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (Abs) (ID):

.3 A

Maximum Drain Current (ID):

.3 A

Maximum Drain-Source On Resistance:

1.9 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e1

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

RJU003N03T106 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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