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R6047KNZ4C13

ROHM

R6047KNZ4C13 by ROHM

ROHM R6047KNZ4C13 is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for switching applications. Features include 141A max pulsed drain current and 0.072 ohm max drain-source resistance. Suitable for enhancement mode operation in various power electronics systems.

Median Price

$7.623

Lifecycle Status

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4

In-Stock Inventory

< 1k

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Chip1Stop

Japan . 12 parts In-Stock

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$8.320

100+ parts

$5.050

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$4.440

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12

$8.320

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$4.440

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Verical

USA . 600 parts In-Stock

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$6.926

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$6.926

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Semtec, LLC

USA . 12 parts In-Stock

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12

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ACDS - Activité Composants Distribution Service

France . 12 parts In-Stock

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CoreStaff

Japan . 600 parts In-Stock

1+ parts

$10.668

100+ parts

$4.849

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600

$10.668

$4.849

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QUARKTWIN TECHNOLOGY LTD

USA . 21,161 parts In-Stock

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USA . 10,000 parts In-Stock

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Microchip USA

USA . 6,537 parts In-Stock

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Overview

Unlock the power of efficiency and reliability with the R6047KNZ4C13 by ROHM. As a leader in the industry, ROHM delivers top-quality Power Field Effect Transistors that are perfect for a variety of switching applications. With a 600V minimum DS breakdown voltage and a maximum drain current of 47A, this N-CHANNEL transistor offers unparalleled performance and durability. Say goodbye to frequent replacements and hello to seamless operation with the R6047KNZ4C13. Trust ROHM for all your power transistor needs and experience the difference in quality and value today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: N-CHANNEL

N-channel transistors are known for their high performance and efficiency, making this product a reliable choice for various applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode improves efficiency and control in switching applications, making this transistor a versatile and practical option.

Minimum DS Breakdown Voltage: 600 V

With a high breakdown voltage, this transistor can handle high voltage applications with ease, ensuring reliable performance and safety.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy installation and mounting, making it convenient to integrate into various electronic systems.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high efficiency and performance, making this transistor a suitable choice for demanding applications.

Technical Specifications

Power Field Effect Transistors (FET) R6047KNZ4C13 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from ROHM

Specs

Avalanche Energy Rating (EAS):

1135 mJ

Minimum DS Breakdown Voltage:

600 V

Maximum Drain Current (ID):

47 A

Maximum Drain-Source On Resistance:

.072 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-247

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

141 A

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

R6047KNZ4C13 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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