Loading...

R6006KND3TL1

ROHM

R6006KND3TL1 by ROHM

ROHM R6006KND3TL1 is a N-CHANNEL FET with 600V DS breakdown voltage and 18A IDM. Ideal for switching applications, it features a built-in diode, 0.83 ohm RDS(on), and 65mJ EAS rating. Suitable for enhancement mode operation in drain connection cases.

Median Price

$1.271

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 90 parts In-Stock

1+ parts

$0.905

100+ parts

$0.545

1k+ parts

$0.476

10k+ parts

-

90

$0.905

$0.545

$0.476

-

DigiKey

USA . 2,621 parts In-Stock

1+ parts

$2.900

100+ parts

$1.297

1k+ parts

$0.968

10k+ parts

$0.876

2,621

$2.900

$1.297

$0.968

$0.876

Verical

USA . 2,192 parts In-Stock

1+ parts

-

100+ parts

$1.271

1k+ parts

$0.953

10k+ parts

-

2,192

-

$1.271

$0.953

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

ACDS - Activité Composants Distribution Service

France . 2,492 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,492

-

-

-

-

Bristol Electronics

USA . 2,288 parts In-Stock

1+ parts

-

100+ parts

$1.314

1k+ parts

$0.736

10k+ parts

$0.694

2,288

-

$1.314

$0.736

$0.694

Dan-Mar Components

USA . 2,288 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,288

-

-

-

-

Nova Conductors

Japan . 50 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

50

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 1,543 parts In-Stock

1+ parts

$0.770

100+ parts

-

1k+ parts

-

10k+ parts

-

1,543

$0.770

-

-

-

Component Stockers USA

USA . 13,020 parts In-Stock

1+ parts

$1.090

100+ parts

$0.620

1k+ parts

$0.560

10k+ parts

-

13,020

$1.090

$0.620

$0.560

-

CoreStaff

Japan . 2,392 parts In-Stock

1+ parts

$1.394

100+ parts

$0.575

1k+ parts

$0.527

10k+ parts

-

2,392

$1.394

$0.575

$0.527

-

Continental Prestige Electronics

USA . 100 parts In-Stock

1+ parts

$1.490

100+ parts

$0.869

1k+ parts

$0.629

10k+ parts

-

100

$1.490

$0.869

$0.629

-

Microchip USA

USA . 7,053 parts In-Stock

1+ parts

$6.459

100+ parts

-

1k+ parts

-

10k+ parts

-

7,053

$6.459

-

-

-

Authorized Procurement Solutions

USA . 5,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,000

-

-

-

-

Argo Parts USA

USA . 3,570 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,570

-

-

-

-

Aranea Global

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,000

-

-

-

-

Overview

Experience the power of innovation with the R6006KND3TL1 by ROHM. As a leader in the industry, ROHM delivers top-quality Power Field Effect Transistors that are perfect for switching applications. This N-CHANNEL transistor offers a high breakdown voltage of 600V and a maximum drain current of 6A, making it ideal for a wide range of projects. With its built-in diode and small outline package style, this transistor provides unmatched performance and reliability. Trust ROHM to deliver cutting-edge technology that exceeds your expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the product.

Polarity or Channel Type: N-CHANNEL

N-Channel FETs typically have better performance characteristics compared to P-Channel FETs, making this product a reliable choice for various applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies circuit design and protects the transistor from reverse current flow, enhancing overall performance.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable operation in various circuits.

Minimum DS Breakdown Voltage: 600 V

High breakdown voltage allows for operation in high voltage applications, making this FET suitable for a wide range of power circuits.

Package Shape: RECTANGULAR

Rectangular shape is space-saving and convenient for mounting on circuit boards with limited space.

Terminal Form: GULL WING

Gull wing terminals provide a strong connection and ease of soldering during assembly, improving overall reliability of the product.

Operating Mode: ENHANCEMENT MODE

Enhancement mode FETs offer better control over the switching operation, resulting in improved efficiency and performance.

Maximum Pulsed Drain Current (IDM): 18 A

High pulsed drain current rating allows for handling sudden spikes in current, making this FET suitable for high-power applications.

Avalanche Energy Rating (EAS): 65 mJ

A high avalanche energy rating indicates the FET's ability to withstand voltage surges and spikes, ensuring reliable performance in harsh environments.

No. of Terminals: 2

Simplifies circuit design and reduces complexity in connections, making it easier to integrate into existing systems.

Package Style (Meter): SMALL OUTLINE

Compact small outline package style saves space and is ideal for applications where size constraints are a consideration.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology provides high switching speeds and low gate drive requirements, ensuring efficient operation of the FET.

Transistor Element Material: SILICON

Silicon-based transistors offer high performance, reliability, and temperature stability, making this FET a durable choice for various applications.

Maximum Drain Current (ID): 6 A

Suitable for handling moderate current loads in a wide range of applications, providing flexibility and versatility in circuit design.

Maximum Drain-Source On Resistance: 0.83 ohm

Low on-resistance results in reduced power losses and improved efficiency in the circuit, making this FET an energy-efficient choice.

Terminal Position: SINGLE

Single terminal position simplifies connections and board layout, improving ease of installation and maintenance.

Case Connection: DRAIN

Drain connection allows for easy integration into existing circuits and provides a reliable connection point for the output signal.

Technical Specifications

Power Field Effect Transistors (FET) R6006KND3TL1 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from ROHM

Specs

Avalanche Energy Rating (EAS):

65 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

600 V

Maximum Drain Current (ID):

6 A

Maximum Drain-Source On Resistance:

.83 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-252

JESD-30 Code:

R-PSSO-G2

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

18 A

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

R6006KND3TL1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 15