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R6002END3TL1

ROHM

R6002END3TL1 by ROHM

ROHM R6002END3TL1 is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for switching applications. Features include 4A IDM, 6mJ EAS, and 3.4Ω max RDS(on). Its small outline package and gull wing terminals make it suitable for surface mount designs.

Median Price

$0.775

Lifecycle Status

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8

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1k+

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Farnell

UK . 100 parts In-Stock

1+ parts

$0.775

100+ parts

$0.475

1k+ parts

$0.345

10k+ parts

$0.297

100

$0.775

$0.475

$0.345

$0.297

Element14

Singapore . 100 parts In-Stock

1+ parts

$1.540

100+ parts

$0.905

1k+ parts

$0.766

10k+ parts

-

100

$1.540

$0.905

$0.766

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DigiKey

USA . 1,857 parts In-Stock

1+ parts

$1.640

100+ parts

$0.692

1k+ parts

$0.497

10k+ parts

$0.398

1,857

$1.640

$0.692

$0.497

$0.398

Verical

USA . 2,500 parts In-Stock

1+ parts

-

100+ parts

$0.678

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2,500

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$0.678

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Chip1Stop

Japan . 754 parts In-Stock

1+ parts

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100+ parts

$0.655

1k+ parts

$0.477

10k+ parts

$0.396

754

-

$0.655

$0.477

$0.396

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Demsay Elektronik

Türkiye . 500,000 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 2,447 parts In-Stock

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2,447

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Nova Conductors

Japan . 300 parts In-Stock

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300

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Ampacity Inc.

Singapore . 1,472 parts In-Stock

1+ parts

$0.466

100+ parts

-

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1,472

$0.466

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Continental Prestige Electronics

USA . 100 parts In-Stock

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$0.775

100+ parts

$0.475

1k+ parts

$0.345

10k+ parts

-

100

$0.775

$0.475

$0.345

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CoreStaff

Japan . 2,500 parts In-Stock

1+ parts

$0.830

100+ parts

$0.366

1k+ parts

$0.319

10k+ parts

-

2,500

$0.830

$0.366

$0.319

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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5,000

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Argo Parts USA

USA . 1,610 parts In-Stock

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1,610

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Aranea Global

USA . 100 parts In-Stock

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100

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Overview

Upgrade your power management with the R6002END3TL1 by ROHM. Designed for efficiency and reliability, this N-CHANNEL Power FET offers enhanced performance in switching applications. With a maximum DS Breakdown Voltage of 600V and a built-in diode, this transistor delivers exceptional value and benefits to customers. Whether you're looking to optimize your system's power usage or improve overall performance, the R6002END3TL1 is the perfect solution. Trust ROHM's reputation for quality and innovation to take your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLastic/Epoxy material provides good thermal conductivity and electrical insulation, making the product durable and reliable.

Polarity or Channel Type: N-CHANNEL

N-Channel design allows for efficient switching and control of current flow, enhancing the performance of the device.

Configuration: SINGLE WITH BUILT-IN DIODE

Built-in diode simplifies the circuit design and ensures better protection against reverse voltage spikes.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable operation.

Minimum DS Breakdown Voltage: 600 V

High breakdown voltage allows for operation in high voltage applications, making the product versatile.

Surface Mount: YES

Surface mount capability makes the product easy to install and saves space on the circuit board.

Maximum Drain Current (ID): 1.7 A

High maximum drain current rating allows for handling higher loads, making the product suitable for a variety of applications.

Technical Specifications

Power Field Effect Transistors (FET) R6002END3TL1 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from ROHM

Specs

Avalanche Energy Rating (EAS):

6 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

600 V

Maximum Drain Current (ID):

1.7 A

Maximum Drain-Source On Resistance:

3.4 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-252

JESD-30 Code:

R-PSSO-G2

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

4 A

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

R6002END3TL1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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