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DTD113ZUT106

ROHM

DTD113ZUT106 by ROHM

ROHM DTD113ZUT106 is a NPN BJT transistor with built-in resistor for switching applications. Features include 0.2W power dissipation, 50V collector-emitter voltage, and 200MHz transition frequency. Its Gull Wing terminals and small outline package make it suitable for surface mount designs.

Median Price

$0.442

Lifecycle Status

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Chip1Stop

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Mouser Electronics

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$0.770

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$0.308

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$0.163

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$0.163

Verical

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$0.106

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$0.106

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DigiKey

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$0.157

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Nova Conductors

Japan . 1,000 parts In-Stock

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PC Components Company LLC

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600

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Bristol Electronics

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600

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Semtec, LLC

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Ampacity Inc.

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CoreStaff

Japan . 19,933 parts In-Stock

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$0.614

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$0.273

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$0.174

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Epart123

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Overview

Unlock the potential of your electronic projects with the high-quality DTD113ZUT106 by ROHM. Manufactured by a trusted name in the industry, this Small Signal Bipolar Junction Transistor offers reliable performance and versatility for a wide range of switching applications. With a built-in resistor and NPN configuration, this transistor is designed for convenience and efficiency. Whether you're a hobbyist or a professional, trust ROHM to deliver exceptional value and performance with the DTD113ZUT106.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good protection for the transistor, making it durable and reliable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in switching applications, making this product suitable for a wide range of electronic circuits.

Configuration: SINGLE WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and saves space on the PCB, making this transistor more convenient to use.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring high performance and efficiency in such circuits.

Surface Mount: YES

Surface mount technology allows for easy assembly onto PCBs and saves space, making this transistor suitable for compact electronic devices.

Package Shape: RECTANGULAR

The rectangular shape of the package allows for efficient placement on the PCB and optimal use of space in electronic designs.

No. of Terminals: 3

With 3 terminals, this transistor can easily be integrated into various electronic circuits and provides flexibility in connectivity.

Maximum Power Dissipation (Abs): 0.2 W

With a maximum power dissipation of 0.2W, this transistor can handle moderate power loads without overheating, ensuring reliable operation.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB, making this transistor suitable for compact electronic devices where size is a consideration.

Minimum DC Current Gain (hFE): 82

A minimum DC current gain of 82 ensures stable and consistent performance in amplification circuits, making this transistor reliable in signal processing applications.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can withstand high temperatures, making it suitable for various environments and applications.

Maximum Collector-Emitter Voltage: 50 V

The maximum collector-emitter voltage of 50V allows this transistor to handle a range of voltages, making it versatile in different circuit designs.

Transistor Element Material: SILICON

Silicon transistors offer high performance, reliability, and efficiency, making this product a good choice for various electronic applications.

Maximum Collector Current (IC): 0.5 A

With a maximum collector current of 0.5A, this transistor can handle moderate current loads, making it suitable for a wide range of circuit designs.

Terminal Finish: TIN SILVER COPPER

The terminal finish of tin, silver, and copper ensures good conductivity and corrosion resistance, enhancing the reliability and longevity of this transistor.

Terminal Position: DUAL

With dual terminal positions, this transistor offers flexibility in circuit design and component placement, making it easy to integrate into various electronic systems.

Maximum Time At Peak Reflow Temperature (s): 10

With a maximum time at peak reflow temperature of 10 seconds, this transistor can be easily and quickly mounted onto PCBs during manufacturing processes.

Peak Reflow Temperature °C: 260

The peak reflow temperature of 260°C ensures reliable soldering and mounting of this transistor onto PCBs, making it suitable for automated assembly processes.

Nominal Transition Frequency (fT): 200 MHz

With a nominal transition frequency of 200MHz, this transistor can operate at high frequencies, making it suitable for RF and high-speed digital applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) DTD113ZUT106 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from ROHM

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO IS 10

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

82

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e1

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

DTD113ZUT106 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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