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DTD113EKT146

ROHM

DTD113EKT146 by ROHM

ROHM DTD113EKT146 is a NPN BJT transistor with VCEsat of 0.3V, hFE of 33, and IC of 0.5A. Ideal for switching applications due to its built-in resistor and small outline package style. Operates at up to 150°C with a max collector-emitter voltage of 50V.

Median Price

$0.202

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Arrow

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$0.510

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$0.202

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$0.133

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$0.082

4,760

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$0.202

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$0.082

DigiKey

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$0.570

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$0.223

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$0.150

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Mouser Electronics

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$0.570

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$0.150

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$0.089

791

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Edge Electronics

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Verical

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$0.082

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TTI

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$0.045

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$0.049

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$0.097

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Component Stockers USA

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$0.070

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Perfect Parts

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Overview

ROHM's DTD113EKT146 is a top-of-the-line Small Signal Bipolar Junction Transistor (BJT) designed for switching applications. With a built-in resistor and NPN configuration, this transistor offers unparalleled performance and reliability. Its low VCEsat of 0.3V ensures efficient power consumption, while its high DC current gain of 33 provides excellent amplification. Perfect for a wide range of electronics projects, the DTD113EKT146 by ROHM is the ideal choice for customers seeking quality, value, and innovation in their components.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: NPN

Allows for easy integration into NPN circuits for versatile functionality.

Configuration: SINGLE WITH BUILT-IN RESISTOR

Simplifies circuit design by incorporating a resistor, saving space and reducing components needed.

Transistor Application: SWITCHING

Designed specifically for switching applications, providing efficient performance in those scenarios.

Surface Mount: YES

Enables easy and secure mounting on PCBs, facilitating manufacturing processes.

Maximum VCEsat: 0.3 V

Low VCEsat minimizes power loss and improves efficiency in switching operations.

Package Shape: RECTANGULAR

Sleek design that saves space and allows for efficient PCB layout.

Terminal Form: GULL WING

Facilitates easy soldering and reliable electrical connections during assembly.

No. of Terminals: 3

Simple 3-terminal setup for easy integration into circuit designs.

Maximum Power Dissipation (Abs): 0.2 W

Allows for handling of moderate power levels without overheating, ensuring reliability.

Package Style (Meter): SMALL OUTLINE

Compact form factor ideal for space-constrained applications.

Minimum DC Current Gain (hFE): 33

Reliable amplification capability with a minimum hFE value of 33.

Maximum Operating Temperature: 150 °C

Can operate efficiently at high temperatures, making it suitable for a range of environments.

Maximum Collector-Emitter Voltage: 50 V

Supports higher voltage applications, increasing the versatility of the transistor.

Transistor Element Material: SILICON

Silicon material ensures reliable performance and longevity of the transistor.

Maximum Collector Current (IC): 0.5 A

With a maximum IC of 0.5 A, it can handle moderate current levels effectively.

Terminal Finish: TIN SILVER COPPER

Provides a reliable and durable finish for the terminals, ensuring secure connections.

Terminal Position: DUAL

Dual terminal design for easy installation and connections in a circuit.

Maximum Time At Peak Reflow Temperature (s): 10

Can withstand peak reflow temperatures for a duration of 10 seconds, ensuring reliable soldering.

Peak Reflow Temperature °C: 260

High peak reflow temperature tolerance for reliable solder joints during assembly.

Nominal Transition Frequency (fT): 200 MHz

High transition frequency for fast switching speeds, making it ideal for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) DTD113EKT146 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from ROHM

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

33

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e1

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.3 V

Trade Compliance

DTD113EKT146 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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