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DTD113ECT116

ROHM

DTD113ECT116 by ROHM

ROHM DTD113ECT116 is a NPN BJT with VCEsat of 0.3V, hFE of 33, and IC of 0.5A. Ideal for switching applications, it operates at up to 150°C and has a fT of 200MHz. Its GULL WING terminals make it suitable for surface mount designs.

Median Price

$0.190

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5

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1k+

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Arrow

USA . 330 parts In-Stock

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$0.291

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$0.100

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$0.066

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$0.034

330

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$0.066

$0.034

Mouser Electronics

USA . 290 parts In-Stock

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$0.360

100+ parts

$0.156

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$0.086

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$0.043

290

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$0.156

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$0.043

Verical

USA . 3,000 parts In-Stock

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$0.088

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$0.085

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$0.088

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Chip1Stop

Japan . 2,500 parts In-Stock

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$0.026

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$0.025

2,500

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$0.026

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$0.025

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ACDS - Activité Composants Distribution Service

France . 1,390 parts In-Stock

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1,390

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CoreStaff

Japan . 3,000 parts In-Stock

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$0.131

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$0.057

10k+ parts

$0.050

3,000

$0.131

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$0.057

$0.050

QUARKTWIN TECHNOLOGY LTD

USA . 12,366 parts In-Stock

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12,366

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Perfect Parts

USA . 6,720 parts In-Stock

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6,720

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iodParts Technologies Inc.

India . 2,071 parts In-Stock

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Overview

Enhance your electronic projects with the DTD113ECT116 by ROHM, a high-quality Small Signal Bipolar Junction Transistor. Manufactured by the reputable brand ROHM, this NPN transistor is ideal for switching applications and comes in a convenient surface mount package. With a low VCEsat of 0.3V and a built-in resistor, this transistor offers exceptional performance and efficiency. Maximize your project's potential with the DTD113ECT116 and experience reliable operation and impressive results. Discover the difference that ROHM transistors can make in your designs today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: NPN

NPN transistors are commonly used and versatile for various applications, making this product compatible with a wide range of circuits.

Configuration: SINGLE WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and saves space, making this transistor convenient for use in compact designs.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor provides efficient performance in turning on and off circuits rapidly.

Maximum VCEsat: 0.3 V

Low VCEsat ensures minimal power loss and high efficiency in operation, making this transistor energy-efficient.

Package Shape: RECTANGULAR

The rectangular shape allows for easy mounting and placement in circuit boards, enhancing convenience in assembly.

Terminal Form: GULL WING

Gull wing terminals provide secure connections and ease of soldering, ensuring reliable performance in various applications.

No. of Terminals: 3

With 3 terminals, this transistor offers flexibility in circuit connections and versatility in use.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the circuit board, making this transistor suitable for compact designs.

Minimum DC Current Gain (hFE): 33

A minimum hFE of 33 ensures consistent amplification of current in the transistor, providing stable performance in various circuit applications.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can withstand high temperatures, making it suitable for demanding industrial applications.

Maximum Collector-Emitter Voltage: 50 V

The 50V maximum VCE rating allows this transistor to handle higher voltage levels, expanding its range of applications.

Transistor Element Material: SILICON

Silicon transistors offer higher performance and reliability compared to other materials, ensuring stable operation in various circuit conditions.

Maximum Collector Current (IC): 0.5 A

With a maximum collector current of 0.5A, this transistor can handle moderate current loads, making it suitable for a wide range of applications.

Terminal Position: DUAL

Dual terminal positioning offers flexibility in connection options, allowing this transistor to be used in various circuit configurations.

Maximum Time At Peak Reflow Temperature (s): 10

The 10 second maximum reflow time allows for efficient soldering during assembly, ensuring reliable connections for the transistor.

Peak Reflow Temperature °C: 260

The peak reflow temperature of 260°C ensures proper soldering and reflow process, enhancing the durability and reliability of the transistor.

Nominal Transition Frequency (fT): 200 MHz

With a high transition frequency of 200MHz, this transistor can switch rapidly between on and off states, making it ideal for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) DTD113ECT116 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from ROHM

Specs

Additional Features:

DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

33

JESD-30 Code:

R-PDSO-G3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.3 V

Trade Compliance

DTD113ECT116 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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