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DTD113ERLRM

Onsemi

DTD113ERLRM by Onsemi

DTD113ERLRM by Onsemi is a NPN BJT with built-in resistor for switching applications. It has a max collector-emitter voltage of 50V, max collector current of 0.1A, and min DC current gain of 3. The transistor comes in a cylindrical package with through-hole terminals made of silicon material.

Median Price

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< 1k

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Digiode

USA . 678 parts In-Stock

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Vyrian

USA . 321 parts In-Stock

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321

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Native Components

USA . 900 parts In-Stock

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$1.060

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900

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Northwest PG Solutions

USA . 1,480 parts In-Stock

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$1.166

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TANS Electronics

Latvia . 7,175 parts In-Stock

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Problanco Electronics

Mexico . 5,588 parts In-Stock

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SupplyDigital Components

Austria . 2,574 parts In-Stock

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Corphita

USA . 1,833 parts In-Stock

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Kulean Microsystems

USA . 1,066 parts In-Stock

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UHIMA Technologies

Türkiye . 700 parts In-Stock

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Corohmni

South Africa . 176 parts In-Stock

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Overview

Enhance your electronic projects with the DTD113ERLRM by Onsemi, a high-quality Small Signal Bipolar Junction Transistor (BJT) that offers reliable performance and durability. With Onsemi's reputation for excellence in manufacturing, this NPN transistor is ideal for switching applications, providing customers with seamless functionality and efficiency. The built-in resistor simplifies installation, while the compact cylindrical package ensures easy integration into various systems. Trust the DTD113ERLRM for superior performance and unmatched value in your electronics projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides good insulation and protection for the transistor, ensuring reliable performance and durability.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, making them versatile and suitable for a wide range of applications.

Configuration: SINGLE WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and saves space, making this transistor a convenient choice for compact electronic devices.

Transistor Application: SWITCHING

Designed for switching applications, this transistor can quickly turn on and off, making it ideal for controlling power flow in various electronic systems.

Package Shape: ROUND

The round package shape allows for easy mounting and handling, making it suitable for automated assembly processes.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and mechanical stability, ensuring reliable performance in demanding environments.

Maximum Power Dissipation (Abs): 0.35 W

With a maximum power dissipation of 0.35 W, this transistor can handle moderate power levels without overheating, ensuring long-term reliability.

Minimum DC Current Gain (hFE): 3

A minimum DC current gain of 3 ensures sufficient amplification in the circuit, allowing for accurate signal processing and control.

Maximum Collector-Emitter Voltage: 50 V

The high collector-emitter voltage rating of 50 V enables this transistor to withstand high voltage levels, making it suitable for a wide range of applications.

Transistor Element Material: SILICON

Silicon is a common semiconductor material known for its reliability and efficiency, making this transistor a dependable choice for electronic circuits.

Maximum Collector Current (IC): 0.1 A

With a maximum collector current of 0.1 A, this transistor can handle moderate current levels, making it suitable for switching and amplification applications.

Terminal Finish: TIN LEAD

Tin lead terminal finish provides good solderability and conductivity, ensuring secure connections and reliable performance in various electronic systems.

Terminal Position: BOTTOM

Bottom terminal position facilitates easy soldering and assembly, making this transistor convenient to use in various circuit layouts.

Peak Reflow Temperature °C: 235

With a peak reflow temperature of 235 °C, this transistor can withstand high-temperature soldering processes, ensuring reliable performance during assembly.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) DTD113ERLRM attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT IN BIAS RESISTOR RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

3

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

DTD113ERLRM Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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