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DTD113EZL1

Onsemi

DTD113EZL1 by Onsemi

DTD113EZL1 by Onsemi is a NPN BJT with built-in resistor for switching applications. It has a max operating temp of 150 °C, max VCE of 50V, and max IC of 0.1A. This transistor comes in a cylindrical package with through-hole terminals made of silicon material.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,966 parts In-Stock

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Digiode

USA . 1,076 parts In-Stock

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SupplyDigital Components

Austria . 7,623 parts In-Stock

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Kulean Microsystems

USA . 6,327 parts In-Stock

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TANS Electronics

Latvia . 3,360 parts In-Stock

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Problanco Electronics

Mexico . 2,160 parts In-Stock

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Northwest PG Solutions

USA . 596 parts In-Stock

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Native Components

USA . 337 parts In-Stock

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Corphita

USA . 248 parts In-Stock

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UHIMA Technologies

Türkiye . 146 parts In-Stock

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Corohmni

South Africa . 135 parts In-Stock

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Overview

Unlock the full potential of your electronic projects with the DTD113EZL1 by Onsemi. Crafted with precision and expertise, this small signal bipolar junction transistor offers unmatched quality and reliability. Ideal for switching applications, this NPN transistor boasts a single configuration with a built-in resistor for seamless integration. Whether you're a DIY enthusiast or a seasoned professional, this product delivers value and performance that exceeds expectations. Elevate your projects with the DTD113EZL1 and experience the difference in quality and efficiency.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan and reliability in various operating conditions.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, offering versatility and compatibility with a wide range of applications.

Configuration: SINGLE WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and saves space, making it convenient for applications where space is limited.

Transistor Application: SWITCHING

Ideal for switching applications, providing fast switching speeds and efficient performance in various electronic circuits.

Package Shape: ROUND

The round package shape offers easy installation and soldering, ensuring a secure connection in the circuit.

No. of Terminals: 3

Three terminals provide flexibility in circuit connections and enable a wider range of circuit designs and applications.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand elevated temperatures without compromising performance.

Maximum Collector-Emitter Voltage: 50 V

The high collector-emitter voltage rating allows for a wide range of voltage applications, increasing the versatility of the transistor.

Maximum Collector Current (IC): 0.1 A

Capable of handling a maximum collector current of 0.1 A, making it suitable for low to medium power applications.

Terminal Finish: TIN LEAD

The tin lead terminal finish ensures a reliable and secure connection in the circuit, enhancing the overall performance and stability.

Terminal Position: BOTTOM

The bottom terminal position facilitates easy PCB mounting and soldering, providing convenience during the assembly process.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) DTD113EZL1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT IN BIAS RESISTOR RATIO IS 1, EUROPEAN PART NUMBER

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

3

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

DTD113EZL1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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