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DTD113ZKT146

ROHM

DTD113ZKT146 by ROHM

ROHM DTD113ZKT146 is a NPN BJT transistor with VCEsat of 0.3V, hFE of 82, and IC of 0.5A. It is used for switching applications in small outline packages with GULL WING terminals. Operating at up to 150°C, it has a peak reflow temperature of 260°C and transition frequency of 200MHz.

Median Price

$0.538

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Chip1Stop

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DigiKey

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Mouser Electronics

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11,986

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TTI

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TME

Poland . 2,800 parts In-Stock

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$0.530

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$0.221

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$0.134

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$0.095

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NAC Semi

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Cyclops Electronics Ltd

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Germany . 6,000 parts In-Stock

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PC Components Company LLC

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Ampacity Inc.

Singapore . 28,866 parts In-Stock

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CoreStaff

Japan . 10,119 parts In-Stock

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Continental Prestige Electronics

USA . 1,405 parts In-Stock

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$0.408

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$0.197

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$0.086

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Benley Electronics

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Overview

Enhance your electronic projects with the DTD113ZKT146 by ROHM, a high-quality Small Signal Bipolar Junction Transistor that offers reliable performance and durability. Manufactured by industry leader ROHM, this NPN transistor with built-in resistor is perfect for switching applications, providing fast and efficient operation. With a maximum collector-emitter voltage of 50V and a low VCEsat of 0.3V, this transistor delivers exceptional value and benefits to customers seeking high-performance components for their designs. Upgrade your projects today with the DTD113ZKT146 and experience the difference in quality and reliability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and resistance to environmental factors, making the transistor suitable for a variety of applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, offering versatile functionality.

Configuration: SINGLE WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and saves space, making it easier to use in various applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable performance in such scenarios.

Surface Mount: YES

Allows for easy and secure mounting on circuit boards, simplifying the manufacturing process.

Maximum VCEsat: 0.3 V

Low saturation voltage minimizes power loss and improves efficiency of the transistor during operation.

Package Shape: RECTANGULAR

Rectangular shape facilitates easy placement and compact layout on circuit boards.

Terminal Form: GULL WING

Gull wing terminals provide secure connections and aid in efficient soldering during assembly.

Maximum Power Dissipation (Abs): 0.2 W

With a low power dissipation, the transistor can handle moderate power levels without overheating.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space and is ideal for compact electronic devices.

Minimum DC Current Gain (hFE): 82

High DC current gain ensures amplification of input signals with minimal distortion.

Maximum Operating Temperature: 150 °C

Wide operating temperature range allows for reliable performance in various environmental conditions.

Maximum Collector-Emitter Voltage: 50 V

Suitable for applications requiring higher voltage handling capabilities.

Transistor Element Material: SILICON

Silicon material offers high performance and reliability in electronic components.

Maximum Collector Current (IC): 0.5 A

Able to handle moderate current levels, making it suitable for a variety of circuit designs.

Terminal Finish: TIN SILVER COPPER

Provides good conductivity and corrosion resistance for reliable connections.

Terminal Position: DUAL

Dual terminal position allows for flexible mounting options in circuit layouts.

Maximum Time At Peak Reflow Temperature (s): 10

Can withstand peak reflow temperatures for a short duration during manufacturing processes.

Peak Reflow Temperature °C: 260

Can withstand high temperatures during manufacturing processes without degrading performance.

Nominal Transition Frequency (fT): 200 MHz

High transition frequency allows for fast switching speeds and improved signal processing capabilities.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) DTD113ZKT146 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from ROHM

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO IS 10

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

82

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e1

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.3 V

Trade Compliance

DTD113ZKT146 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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