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2SC1890AFTZ

Renesas Technology

2SC1890AFTZ by Renesas Technology

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .05 A; Maximum Collector-Emitter Voltage: 120 V;

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In-Stock Inventory

< 1k

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Native Components

USA . 172 parts In-Stock

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$1.104

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172

$1.104

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Northwest PG Solutions

USA . 295 parts In-Stock

1+ parts

$1.214

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295

$1.214

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Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SC1890AFTZ attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Renesas Technology

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

120 V

Configuration:

Minimum DC Current Gain (hFE):

600

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SC1890AFTZ Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Renesas Technology

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