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T2G6001528-SG

Qorvo

T2G6001528-SG by Qorvo

T2G6001528-SG by Qorvo is a P-CHANNEL RF FET with CERAMIC, METAL-SEALED COFIRED package. It operates in DEPLETION MODE for AMPLIFIER applications in C BAND. Featuring GALLIUM NITRIDE technology, it has a max ID of 5A and can withstand peak reflow temp of 260°C for 30s.

Median Price

$163.530

Lifecycle Status

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In-Stock Inventory

1k+

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Nova Conductors

Japan . 100 parts In-Stock

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$163.530

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Vyrian

USA . 1,371 parts In-Stock

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 542 parts In-Stock

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$12.241

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542

$12.241

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Netroflash

USA . 1,000 parts In-Stock

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$163.530

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Perfect Parts

USA . 112 parts In-Stock

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Overview

Elevate your RF power applications to the next level with the T2G6001528-SG by Qorvo. Crafted with precision using high-quality materials and cutting-edge technology, this P-Channel RF Power Field Effect Transistor offers unmatched performance and reliability. Whether you're amplifying signals or enhancing communication systems, this transistor's depletion mode operation and Gallium Nitride element material ensure maximum efficiency and power. Trust Qorvo to deliver innovative solutions that empower your projects to reach new heights of success. Unlock the potential of your RF power applications with the T2G6001528-SG today.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

This material provides excellent thermal and electrical properties, ensuring efficient heat dissipation and reliability in operation.

Polarity or Channel Type: P-CHANNEL

Polarity type allows for efficient amplification and control of current flow in the transistor, making it suitable for amplifier applications.

Configuration: SINGLE

Single configuration simplifies the design and integration process, making it easier to use in various applications.

Transistor Application: AMPLIFIER

Specifically designed for amplification purposes, ensuring high performance and stability in amplifier circuits.

Surface Mount: YES

Surface mount capability allows for easy and convenient installation on circuit boards, saving space and facilitating mass production.

Package Shape: RECTANGULAR

Rectangular shape provides compatibility with standard PCB layouts and allows for efficient use of space in electronic systems.

Terminal Form: FLAT

Flat terminal form simplifies soldering process and ensures secure connections for reliable performance.

Operating Mode: DEPLETION MODE

Depletion mode operation allows for precise control of current flow and enhances the transistor's performance in various operating conditions.

Highest Frequency Band: C BAND

Optimized for C Band frequencies, ensuring high-speed data transmission and efficient signal processing.

No. of Terminals: 2

Two terminals configuration simplifies the circuit design and enhances the overall efficiency of the transistor.

Package Style (Meter): FLATPACK

Flatpack package style provides a compact and durable housing for the transistor, making it ideal for space-constrained applications.

Field Effect Transistor Technology: HIGH ELECTRON MOBILITY

High electron mobility technology enhances the transistor's performance in high-frequency applications, ensuring fast and reliable signal processing.

Transistor Element Material: GALLIUM NITRIDE

Gallium nitride material offers superior electrical properties, allowing for high-power handling and increased efficiency in operation.

Maximum Drain Current (ID): 5 A

High maximum drain current capability enables the transistor to handle large current flows, making it suitable for high-power applications.

Terminal Position: DUAL

Dual terminal positioning provides flexibility in circuit integration and allows for versatile use in various electronic systems.

Case Connection: SOURCE

Source case connection enhances the transistor's stability and reliability in operation, ensuring consistent performance over time.

Maximum Time At Peak Reflow Temperature (s): 30

Capable of withstanding peak reflow temperatures for a longer duration, ensuring reliable soldering and secure connections in manufacturing processes.

Peak Reflow Temperature °C: 260

High peak reflow temperature tolerance provides reliability in soldering processes and ensures stable performance under extreme temperature conditions.

Technical Specifications

RF Power Field Effect Transistors (FET) T2G6001528-SG attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from Qorvo

Specs

Case Connection:

SOURCE

Configuration:

Maximum Drain Current (ID):

5 A

Field Effect Transistor Technology:

HIGH ELECTRON MOBILITY

Highest Frequency Band:

C BAND

JESD-30 Code:

R-CDFP-F2

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

DEPLETION MODE

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLATPACK

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

GALLIUM NITRIDE

Trade Compliance

T2G6001528-SG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Qorvo

Your car. Your smartphone. Your wrist. Your heart. Even outer space. Qorvo products are at work connecting, protecting and powering the planet. We bring core radio frequency (RF) and power technologies and solutions to mobile, infrastructure, the IoT, defense/aerospace and power management markets. Transforming the way you live, work, play and communicate — that's what inspires us. Innovation. Product Leadership. Scale. Speed. At Qorvo, we are driven by the possibility of discovery — of new RF and power technologies and advancements in design, manufacturing and communications that make the world a better, cleaner and more connected place. We've been working on that for more than 30 years, both as innovators and as stewards of our planet. And we are just getting started.

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