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SZSMS24CT1G

Onsemi

SZSMS24CT1G by Onsemi

SZSMS24CT1G by Onsemi is a transient suppression device with 5 common anode elements. It has a max power dissipation of 350W, breakdown voltage of 29.35V, and reverse current of 1uA. Ideal for applications requiring protection against voltage transients in electronic circuits.

Median Price

$0.690

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 2,625 parts In-Stock

1+ parts

$0.690

100+ parts

$0.273

1k+ parts

$0.207

10k+ parts

-

2,625

$0.690

$0.273

$0.207

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Distributors (In-Stock)

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Chip Stock

USA . 25,000 parts In-Stock

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Flip Electronics

USA . 9,000 parts In-Stock

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9,000

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Digiode

USA . 666 parts In-Stock

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666

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Vyrian

USA . 267 parts In-Stock

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267

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Nova Conductors

Japan . 22 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 1,099 parts In-Stock

1+ parts

$3.010

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1,099

$3.010

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AZTECH Wire

Italy . 267 parts In-Stock

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$9.774

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267

$9.774

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Kulean Microsystems

USA . 4,241 parts In-Stock

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Continental Prestige Electronics

USA . 2,996 parts In-Stock

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SupplyDigital Components

Austria . 1,800 parts In-Stock

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Corphita

USA . 1,797 parts In-Stock

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TANS Electronics

Latvia . 1,381 parts In-Stock

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Argo Parts USA

USA . 1,049 parts In-Stock

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UHIMA Technologies

Türkiye . 506 parts In-Stock

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Problanco Electronics

Mexico . 504 parts In-Stock

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Corohmni

South Africa . 356 parts In-Stock

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Bastille Electronics

Australia . 120 parts In-Stock

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Overview

Discover the power of the SZSMS24CT1G by Onsemi, a top-of-the-line Transient Suppression Device designed for superior protection. With a common anode configuration and 5 elements, this product offers unmatched quality and reliability from a trusted manufacturer. Ideal for a wide range of applications, this device ensures peace of mind by safeguarding your electronics from damaging voltage spikes. Trust in Onsemi's expertise and invest in the SZSMS24CT1G for unbeatable protection and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes this product lightweight and durable.

Config: COMMON ANODE, 5 ELEMENTS

The common anode configuration with 5 elements provides efficient transient suppression for multiple circuits.

Surface Mount: YES

Being surface mount compatible allows for easy and convenient installation onto circuit boards.

Maximum Non Repetitive Peak Reverse Power Dissipation: 350 W

With a high power dissipation capacity, this product can effectively handle sudden spikes in voltage.

Nominal Breakdown Voltage: 29.35 V

The nominal breakdown voltage ensures reliable protection against overvoltage situations.

Maximum Reverse Current: 1 uA

The low reverse current minimizes power loss and ensures efficient operation.

Package Shape: RECTANGULAR

The rectangular shape of the package allows for space-saving installation in various applications.

Reverse Test Voltage: 24 V

The reverse test voltage rating ensures the product can withstand reverse voltage without damage.

No. of Terminals: 6

The 6 terminals provide secure connections for stable performance.

Package Style (Meter): SMALL OUTLINE

The small outline package style is suitable for compact circuit designs.

Maximum Operating Temperature: 150 °C

The high operating temperature range ensures reliability in different environmental conditions.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature allows for use in extreme cold environments.

Terminal Finish: MATTE TIN

The matte tin finish on the terminals prevents corrosion and ensures good conductivity.

Terminal Position: DUAL

The dual terminal position provides flexibility in circuit layouts.

Minimum Breakdown Voltage: 26.7 V

The minimum breakdown voltage protects against voltage surges effectively.

Maximum Time At Peak Reflow Temperature (s): 30

The maximum time at peak reflow temperature ensures proper soldering during installation.

Peak Reflow Temperature °C: 260

The high peak reflow temperature ensures secure solder joints for reliable performance.

Maximum Breakdown Voltage: 32 V

The maximum breakdown voltage offers added protection against high voltage spikes.

Reference Standard: IEC-61000-4-2

Complies with the industry standard, ensuring quality and performance.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The Trans Voltage Suppressor Diode type effectively suppresses transient voltages.

Technology: AVALANCHE

The avalanche technology provides high energy handling capacity for efficient transient suppression.

Terminal Form: GULL WING

The gull-wing terminal form facilitates easy soldering and secure connection.

No. of Elements: 5

The 5 diode elements provide enhanced protection against transients.

Maximum Repetitive Peak Reverse Voltage: 24 V

The maximum repetitive peak reverse voltage rating ensures continuous protection against voltage spikes.

Polarity: UNIDIRECTIONAL

The unidirectional polarity ensures protection in one direction only.

Maximum Clamping Voltage: 44 V

The maximum clamping voltage limits peak voltage levels to protect downstream components.

Diode Element Material: SILICON

The use of silicon material in the diode elements ensures reliability and durability.

Technical Specifications

Transient Suppression Devices SZSMS24CT1G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Maximum Breakdown Voltage:

32 V

Minimum Breakdown Voltage:

26.7 V

Nominal Breakdown Voltage:

29.35 V

Maximum Clamping Voltage:

44 V

Config:

COMMON ANODE, 5 ELEMENTS

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

350 W

No. of Elements:

5

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Reference Standard:

IEC-61000-4-2

Maximum Repetitive Peak Reverse Voltage:

24 V

Maximum Reverse Current:

1 uA

Reverse Test Voltage:

24 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SZSMS24CT1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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