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SZSMF26AT1G

Onsemi

SZSMF26AT1G by Onsemi

SZSMF26AT1G by Onsemi is a Zener diode with 26V breakdown voltage, ideal for transient suppression applications. It has a max power dissipation of 0.385W and can handle non-repetitive peak reverse power up to 1000W. This single-configured device comes in a small outline package suitable for surface mount technology.

Median Price

$0.715

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 6,255 parts In-Stock

1+ parts

$0.700

100+ parts

$0.277

1k+ parts

$0.189

10k+ parts

$0.132

6,255

$0.700

$0.277

$0.189

$0.132

DigiKey

USA . 1,507 parts In-Stock

1+ parts

$0.730

100+ parts

$0.288

1k+ parts

$0.196

10k+ parts

-

1,507

$0.730

$0.288

$0.196

-

Distributors (In-Stock)

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Nova Conductors

Japan . 870 parts In-Stock

1+ parts

$0.197

100+ parts

-

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870

$0.197

-

-

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Digiode

USA . 1,864 parts In-Stock

1+ parts

$0.618

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-

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1,864

$0.618

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Vyrian

USA . 2,918 parts In-Stock

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2,918

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Distributors (Availability)

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Corohmni

South Africa . 181 parts In-Stock

1+ parts

$0.193

100+ parts

-

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181

$0.193

-

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Argo Parts USA

USA . 2,662 parts In-Stock

1+ parts

$0.197

100+ parts

-

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-

10k+ parts

$0.191

2,662

$0.197

-

-

$0.191

Continental Prestige Electronics

USA . 208 parts In-Stock

1+ parts

$0.197

100+ parts

-

1k+ parts

-

10k+ parts

$0.193

208

$0.197

-

-

$0.193

Netroflash

USA . 50 parts In-Stock

1+ parts

$0.197

100+ parts

-

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50

$0.197

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Ampacity Inc.

Singapore . 4,086 parts In-Stock

1+ parts

$0.442

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4,086

$0.442

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Corphita

USA . 1,302 parts In-Stock

1+ parts

$0.585

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1,302

$0.585

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Kepictronics

USA . 22,293 parts In-Stock

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22,293

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SupplyDigital Components

Austria . 7,247 parts In-Stock

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TANS Electronics

Latvia . 4,546 parts In-Stock

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4,546

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Kulean Microsystems

USA . 2,981 parts In-Stock

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2,981

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Problanco Electronics

Mexico . 2,091 parts In-Stock

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2,091

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UHIMA Technologies

Türkiye . 652 parts In-Stock

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652

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Overview

Enhance the protection of your electronic devices with the SZSMF26AT1G by Onsemi. As a leading manufacturer in the industry, Onsemi ensures top-notch quality and reliability in their Transient Suppression Devices. This small outline package contains a powerful Zener diode that safeguards against voltage spikes, making it ideal for a wide range of applications. Trust in Onsemi to provide high-performance solutions that deliver peace of mind and value to customers seeking superior transient protection.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material for the package body provides good insulation and protection for the internal components of the transient suppression device.

Surface Mount: YES

Being surface mountable makes it easier for automated assembly processes, saving time and increasing efficiency in manufacturing.

Maximum Non Repetitive Peak Reverse Power Dissipation: 1000 W

With a high maximum non repetitive peak reverse power dissipation, this transient suppression device can effectively handle large spikes in voltage without being damaged.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows this device to function reliably in a wide range of environments.

Minimum Breakdown Voltage: 28.9 V

The low minimum breakdown voltage ensures that the device triggers at a relatively low voltage, providing effective protection against transient surges.

Maximum Repetitive Peak Reverse Voltage: 26 V

The maximum repetitive peak reverse voltage of 26 V makes this device suitable for applications where protection against relatively low voltage spikes is required.

Technical Specifications

Transient Suppression Devices SZSMF26AT1G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY, LOW ZENER IMPEDANCE

Maximum Breakdown Voltage:

31.9 V

Minimum Breakdown Voltage:

28.9 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-F2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Reverse Power Dissipation:

1000 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.385 W

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

26 V

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

SZSMF26AT1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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