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SZSMF05CT2G

Onsemi

SZSMF05CT2G by Onsemi

SZSMF05CT2G by Onsemi is a transient suppression device with 5 elements in common anode configuration. It has a max non-repetitive peak reverse power dissipation of 100W and breakdown voltage of 6.7V. Ideal for applications requiring protection against voltage transients, such as automotive electronics or industrial equipment.

Median Price

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Lifecycle Status

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4

In-Stock Inventory

1k+

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Chip Stock

USA . 74,000 parts In-Stock

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Digiode

USA . 1,848 parts In-Stock

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Nova Conductors

Japan . 870 parts In-Stock

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Vyrian

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Ampacity Inc.

Singapore . 762 parts In-Stock

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$0.010

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762

$0.010

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Advanced Electronics

New Zealand . 89 parts In-Stock

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$0.095

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$0.090

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Aztec Data Supply Inc.

USA . 2,131 parts In-Stock

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$0.190

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Semicontronic

India . 908 parts In-Stock

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$2.010

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$1.960

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$1.950

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908

$2.010

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AZTECH Wire

Italy . 756 parts In-Stock

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$9.490

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Continental Prestige Electronics

USA . 5,820 parts In-Stock

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Kulean Microsystems

USA . 4,455 parts In-Stock

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SupplyDigital Components

Austria . 4,124 parts In-Stock

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Problanco Electronics

Mexico . 4,030 parts In-Stock

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TANS Electronics

Latvia . 2,760 parts In-Stock

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Corphita

USA . 983 parts In-Stock

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UHIMA Technologies

Türkiye . 283 parts In-Stock

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Argo Parts USA

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Corohmni

South Africa . 113 parts In-Stock

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Bastille Electronics

Australia . 50 parts In-Stock

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Overview

Discover the SZSMF05CT2G by Onsemi, a high-quality Transient Suppression Device designed to provide reliable protection against voltage spikes. With a sleek surface mount design and superior manufacturing by Onsemi, this product offers peace of mind in various applications. Whether you're safeguarding sensitive electronics or ensuring equipment longevity, this device delivers unmatched value with its impressive performance and durability. Trust Onsemi for innovative solutions that prioritize customer satisfaction and deliver exceptional results every time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the device lightweight and durable, ideal for saving space and ensuring long-term reliability.

Nominal Breakdown Voltage: 6.7 V

This specific breakdown voltage is suitable for transient suppression in various electronic circuits, providing protection against voltage spikes without affecting normal operation.

Maximum Repetitive Peak Reverse Voltage: 5 V

The maximum repetitive peak reverse voltage of 5 V ensures efficient protection from voltage surges in electronic systems while maintaining functionality without compromising safety.

Maximum Clamping Voltage: 12.5 V

The maximum clamping voltage of 12.5 V indicates the device's ability to limit the voltage spikes to a safe level, thus safeguarding connected components from damage.

Technology: AVALANCHE

The use of avalanche technology allows for rapid response to transient events, ensuring effective suppression of voltage spikes and preventing damage to sensitive electronics.

Technical Specifications

Transient Suppression Devices SZSMF05CT2G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Maximum Breakdown Voltage:

7.2 V

Minimum Breakdown Voltage:

6.2 V

Nominal Breakdown Voltage:

6.7 V

Maximum Clamping Voltage:

12.5 V

Config:

COMMAN ANODE, 5 ELEMENTS

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

100 W

No. of Elements:

5

No. of Terminals:

6

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Reference Standard:

AEC-Q101, IEC-61000-4-2

Maximum Repetitive Peak Reverse Voltage:

5 V

Maximum Reverse Current:

5 uA

Reverse Test Voltage:

5 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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