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SZSMS05T1G

Onsemi

SZSMS05T1G by Onsemi

SZSMS05T1G by Onsemi is a Transient Suppression Device with 4 common anode elements. It has a max power dissipation of 0.225W and operates b/w -55 to 150°C. Ideal for applications requiring protection against voltage transients in automotive and industrial electronics.

Median Price

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Lifecycle Status

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8

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Flip Electronics (Authorized)

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Chip Stock

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DigiKey Marketplace

USA . 6,000 parts In-Stock

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Vyrian

USA . 5,507 parts In-Stock

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Bristol Electronics

USA . 3,000 parts In-Stock

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Digiode

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Nova Conductors

Japan . 75 parts In-Stock

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Aztec Data Supply Inc.

USA . 4,822 parts In-Stock

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Ampacity Inc.

Singapore . 5,902 parts In-Stock

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Semicontronic

India . 5,515 parts In-Stock

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Corohmni

South Africa . 56 parts In-Stock

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Kepictronics

USA . 66,540 parts In-Stock

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SupplyDigital Components

Austria . 7,268 parts In-Stock

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Kulean Microsystems

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Continental Prestige Electronics

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Argo Parts USA

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Problanco Electronics

Mexico . 1,634 parts In-Stock

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Corphita

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TANS Electronics

Latvia . 1,204 parts In-Stock

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UHIMA Technologies

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Bastille Electronics

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Overview

Enhance the reliability of your electronic devices with the SZSMS05T1G by Onsemi. Crafted with precision and expertise, this transient suppression device offers unparalleled protection against voltage surges and spikes. Designed for common anode configurations, this product is ideal for a wide range of applications. With a maximum power dissipation of 350W and a compact small outline package style, the SZSMS05T1G ensures optimal performance even in harsh operating conditions. Trust in Onsemi's commitment to quality and innovation, and experience the peace of mind that comes with superior surge protection. Choose the SZSMS05T1G for unmatched value and reliability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and reliability for long-term use.

Config: COMMON ANODE, 4 ELEMENTS

The common anode configuration with 4 elements allows for effective transient suppression and protection of connected devices.

Maximum Non Repetitive Peak Reverse Power Dissipation: 350 W

High maximum peak reverse power dissipation capacity makes it suitable for handling sudden surges or spikes in voltage.

Package Shape: RECTANGULAR

Rectangular shape allows for easy integration and placement within electronic circuits or systems.

No. of Terminals: 6

Having 6 terminals provides flexibility in connectivity and installation options.

Maximum Operating Temperature: 150 °C

High maximum operating temperature ensures stable performance even in demanding environments.

Terminal Finish: MATTE TIN

Matte tin finish provides good conductivity and corrosion resistance for long-lasting connection.

Maximum Breakdown Voltage: 7.2 V

High maximum breakdown voltage ensures effective protection against voltage surges or transients.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Being a trans voltage suppressor diode, it efficiently suppresses voltage transients to protect connected devices.

Technology: AVALANCHE

Avalanche technology enables quick response to voltage spikes and ensures reliable transient suppression.

Technical Specifications

Transient Suppression Devices SZSMS05T1G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Maximum Breakdown Voltage:

7.2 V

Minimum Breakdown Voltage:

6 V

Config:

COMMON ANODE, 4 ELEMENTS

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

350 W

No. of Elements:

4

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.225 W

Reference Standard:

AEC-Q101; IEC-61000-4-2, 4-4, 4-5

Maximum Repetitive Peak Reverse Voltage:

5 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SZSMS05T1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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