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SZSMF12AT1G

Onsemi

SZSMF12AT1G by Onsemi

SZSMF12AT1G by Onsemi is a Zener diode with 12V breakdown voltage, 1000W peak power dissipation, and AEC-Q101 standard. It is used for transient suppression in automotive electronics due to its unidirectional polarity and silicon material.

Median Price

$0.307

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 2,052 parts In-Stock

1+ parts

$0.710

100+ parts

$0.278

1k+ parts

$0.189

10k+ parts

$0.132

2,052

$0.710

$0.278

$0.189

$0.132

DigiKey

USA . 1,171 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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$0.121

1,171

-

-

-

$0.121

Element14

Singapore . 32 parts In-Stock

1+ parts

-

100+ parts

$0.307

1k+ parts

$0.242

10k+ parts

$0.220

32

-

$0.307

$0.242

$0.220

Farnell

UK . 22 parts In-Stock

1+ parts

-

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22

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 900 parts In-Stock

1+ parts

$0.200

100+ parts

-

1k+ parts

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900

$0.200

-

-

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Digiode

USA . 1,905 parts In-Stock

1+ parts

$0.428

100+ parts

-

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1,905

$0.428

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Vyrian

USA . 3,670 parts In-Stock

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3,670

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 3,034 parts In-Stock

1+ parts

$0.070

100+ parts

-

1k+ parts

-

10k+ parts

-

3,034

$0.070

-

-

-

Corohmni

South Africa . 196 parts In-Stock

1+ parts

$0.119

100+ parts

-

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196

$0.119

-

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Semicontronic

India . 3,288 parts In-Stock

1+ parts

$0.145

100+ parts

$0.141

1k+ parts

$0.141

10k+ parts

-

3,288

$0.145

$0.141

$0.141

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Ampacity Inc.

Singapore . 3,694 parts In-Stock

1+ parts

$0.174

100+ parts

-

1k+ parts

-

10k+ parts

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3,694

$0.174

-

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Bastille Electronics

Australia . 300 parts In-Stock

1+ parts

$0.200

100+ parts

$0.190

1k+ parts

$0.180

10k+ parts

$0.178

300

$0.200

$0.190

$0.180

$0.178

Argo Parts USA

USA . 4,713 parts In-Stock

1+ parts

$0.200

100+ parts

-

1k+ parts

-

10k+ parts

$0.194

4,713

$0.200

-

-

$0.194

Continental Prestige Electronics

USA . 1,520 parts In-Stock

1+ parts

$0.260

100+ parts

$0.189

1k+ parts

$0.156

10k+ parts

$0.127

1,520

$0.260

$0.189

$0.156

$0.127

Corphita

USA . 1,566 parts In-Stock

1+ parts

$0.405

100+ parts

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1,566

$0.405

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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10,000

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Problanco Electronics

Mexico . 7,211 parts In-Stock

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7,211

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Kulean Microsystems

USA . 5,626 parts In-Stock

1+ parts

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5,626

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SupplyDigital Components

Austria . 5,237 parts In-Stock

1+ parts

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5,237

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TANS Electronics

Latvia . 5,105 parts In-Stock

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5,105

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UHIMA Technologies

Türkiye . 571 parts In-Stock

1+ parts

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571

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Overview

Protect your electronics with the SZSMF12AT1G by Onsemi, a high-quality transient suppression device that offers unparalleled reliability and performance. Manufactured by Onsemi, a trusted leader in the industry, this product is perfect for a wide range of applications where protection against voltage spikes is crucial. With its compact size and advanced technology, the SZSMF12AT1G provides peace of mind for customers looking to safeguard their valuable equipment. Invest in the best with Onsemi's SZSMF12AT1G and ensure your devices are protected at all times.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the device, making it a reliable choice for transient suppression.

Config: SINGLE

Single configuration simplifies installation and ensures easy operation of the suppression device.

Surface Mount: YES

Surface mount capability allows for easy and convenient installation in various electronic applications.

Maximum Non Repetitive Peak Reverse Power Dissipation: 1000 W

High power dissipation capacity ensures effective suppression of transient overvoltages.

Package Shape: RECTANGULAR

Rectangular shape allows for compact and space-saving installation of the device in tight spaces.

No. of Terminals: 2

Two terminals offer easy connectivity and installation of the transient suppression device.

Package Style (Meter): SMALL OUTLINE

Small outline package design makes it suitable for applications with limited space availability.

Maximum Operating Temperature: 150 °C

High maximum operating temperature range ensures reliable performance even in extreme environments.

Minimum Operating Temperature: -55 °C

Wide temperature range allows for operation in harsh temperature conditions.

Terminal Finish: MATTE TIN

Matte tin finish provides corrosion resistance and ensures long-lasting performance of the terminals.

Terminal Position: DUAL

Dual terminal position offers flexibility in installation and ensures secure connections.

Maximum Power Dissipation: 0.385 W

Efficient power dissipation capabilities help in protecting the device from overvoltages.

Minimum Breakdown Voltage: 13.3 V

Low breakdown voltage ensures effective suppression of transient voltage spikes.

Maximum Breakdown Voltage: 14.7 V

High maximum breakdown voltage provides protection against higher voltage surges.

Reference Standard: AEC-Q101

Compliance with AEC-Q101 standard ensures high-quality and reliable performance in automotive applications.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Transient voltage suppressor diode type offers fast response and effective protection against voltage spikes.

Technology: ZENER

Zener technology ensures precise voltage regulation and transient suppression capabilities.

Terminal Form: FLAT

Flat terminal form allows for easy soldering and secure connections during installation.

Maximum Repetitive Peak Reverse Voltage: 12 V

High repetitive peak reverse voltage handling capacity ensures protection against repeated voltage surges.

Polarity: UNIDIRECTIONAL

Unidirectional polarity ensures effective suppression of voltage spikes in a single direction.

Diode Element Material: SILICON

Silicon diode element material offers high efficiency and reliability in transient suppression applications.

Technical Specifications

Transient Suppression Devices SZSMF12AT1G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY, LOW ZENER IMPEDANCE

Maximum Breakdown Voltage:

14.7 V

Minimum Breakdown Voltage:

13.3 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-F2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Reverse Power Dissipation:

1000 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.385 W

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

12 V

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

SZSMF12AT1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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