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SZSMF05CT1G

Onsemi

SZSMF05CT1G by Onsemi

SZSMF05CT1G by Onsemi is a Transient Suppression Device with 5 elements in common anode configuration. It offers a max non-repetitive peak reverse power dissipation of 100W, breakdown voltage of 6.7V, and max clamping voltage of 12.5V. Ideal for applications requiring protection against transient voltage spikes in electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Chip Stock

USA . 33,000 parts In-Stock

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Digiode

USA . 918 parts In-Stock

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918

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Vyrian

USA . 517 parts In-Stock

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517

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Nova Conductors

Japan . 45 parts In-Stock

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Semicontronic

India . 1,607 parts In-Stock

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$0.010

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$0.010

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$0.010

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1,607

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Aztec Data Supply Inc.

USA . 77 parts In-Stock

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$0.080

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77

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Advanced Electronics

New Zealand . 20 parts In-Stock

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$0.128

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$0.121

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20

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$0.121

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Ampacity Inc.

Singapore . 716 parts In-Stock

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$3.010

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AZTECH Wire

Italy . 300 parts In-Stock

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$5.889

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Problanco Electronics

Mexico . 7,713 parts In-Stock

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Continental Prestige Electronics

USA . 4,468 parts In-Stock

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TANS Electronics

Latvia . 3,979 parts In-Stock

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SupplyDigital Components

Austria . 2,268 parts In-Stock

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Kulean Microsystems

USA . 1,973 parts In-Stock

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Argo Parts USA

USA . 832 parts In-Stock

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Modulus Dynamics

Lithuania . 550 parts In-Stock

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550

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Corphita

USA . 490 parts In-Stock

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490

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Corohmni

South Africa . 382 parts In-Stock

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382

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Bastille Electronics

Australia . 200 parts In-Stock

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200

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Robosynatics

Brazil . 100 parts In-Stock

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100

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Lucentia Tech

USA . 100 parts In-Stock

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UHIMA Technologies

Türkiye . 55 parts In-Stock

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Overview

Experience superior protection with the SZSMF05CT1G by Onsemi, a leading manufacturer in transient suppression devices. Ideal for a wide range of applications, this product offers unmatched quality and reliability. Safeguard your electronics with its advanced technology and robust construction, providing peace of mind against voltage spikes and surges. Trust Onsemi for innovative solutions that deliver value and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides durability and protection for the components inside, ensuring a longer lifespan for the product.

Maximum Non Repetitive Peak Reverse Power Dissipation: 100 W

The high peak power dissipation capability makes this product suitable for handling transient overvoltage events effectively without getting damaged.

Nominal Breakdown Voltage: 6.7 V

The nominal breakdown voltage ensures that the device activates at the specified voltage, providing reliable protection against voltage spikes.

Maximum Reverse Current: 5 uA

The low reverse current helps in maintaining the efficiency of the device by minimizing power loss during normal operation.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this product can withstand harsh environmental conditions, making it suitable for a wide range of applications.

Reference Standard: AEC-Q101, IEC-61000-4-2

Compliance with industry standards like AEC-Q101 and IEC-61000-4-2 ensures reliability and performance consistency of the product.

Technical Specifications

Transient Suppression Devices SZSMF05CT1G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Maximum Breakdown Voltage:

7.2 V

Minimum Breakdown Voltage:

6.2 V

Nominal Breakdown Voltage:

6.7 V

Maximum Clamping Voltage:

12.5 V

Config:

COMMAN ANODE, 5 ELEMENTS

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

100 W

No. of Elements:

5

No. of Terminals:

6

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Reference Standard:

AEC-Q101, IEC-61000-4-2

Maximum Repetitive Peak Reverse Voltage:

5 V

Maximum Reverse Current:

5 uA

Reverse Test Voltage:

5 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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