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SZNZ8F2V4MX2WT5G

Onsemi

SZNZ8F2V4MX2WT5G by Onsemi

SZNZ8F2V4MX2WT5G by Onsemi is a Zener diode with 5mA test current, 50uA reverse current, and 1V reverse test voltage. It is ideal for applications requiring precise voltage regulation in automotive electronics due to its AEC-Q101 reference standard compliance and small outline package style.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Vyrian

USA . 8,975 parts In-Stock

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Digiode

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AZTECH Wire

Italy . 928 parts In-Stock

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TANS Electronics

Latvia . 6,106 parts In-Stock

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Kulean Microsystems

USA . 5,987 parts In-Stock

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SupplyDigital Components

Austria . 4,748 parts In-Stock

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Problanco Electronics

Mexico . 2,167 parts In-Stock

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UHIMA Technologies

Türkiye . 854 parts In-Stock

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Corohmni

South Africa . 177 parts In-Stock

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Corphita

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Overview

Discover the unparalleled quality and reliability of the SZNZ8F2V4MX2WT5G Zener Diode by Onsemi. With a reputation for excellence in manufacturing, Onsemi delivers superior products that meet the highest industry standards. Ideal for a wide range of applications, this Zener diode offers unmatched performance and precision. Experience the value and benefits of choosing Onsemi for all your electronic component needs. Upgrade to the SZNZ8F2V4MX2WT5G today and enjoy the advantages it brings to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material ensures durability and protection for the diode, making it suitable for various applications.

Working Test Current: 5 mA

With a working test current of 5 mA, this Zener diode can operate efficiently and reliably within its specified limits.

Maximum Reverse Current: 50 uA

The low maximum reverse current of 50 uA indicates high efficiency and low power consumption of the diode.

Maximum Operating Temperature: 150 °C

This Zener diode can withstand high temperatures up to 150 °C, making it suitable for industrial and automotive applications.

Nominal Reference Voltage: 2.4 V

With a nominal reference voltage of 2.4 V, this Zener diode provides precise and stable voltage regulation in electronic circuits.

Technical Specifications

Zener Diodes SZNZ8F2V4MX2WT5G attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

100 ohm

Maximum Forward Voltage (VF):

.9 V

JESD-30 Code:

R-PDSO-N2

JESD-609 Code:

e4

Maximum Knee Impedance:

1000 ohm

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.25 W

Reference Standard:

AEC-Q101

Nominal Reference Voltage:

2.4 V

Maximum Reverse Current:

50 uA

Reverse Test Voltage:

1 V

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Maximum Voltage Tolerance:

12.08 %

Working Test Current:

5 mA

Trade Compliance

SZNZ8F2V4MX2WT5G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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