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1N5239BT/R

NXP Semiconductors

1N5239BT/R by NXP Semiconductors

1N5239BT/R by NXP Semiconductors is a Zener diode with a working test current of 20 mA and max reverse current of 3 uA. It has a nominal reference voltage of 9.1 V, making it ideal for voltage regulation applications. With a max power dissipation of 0.4 W and operating temperature range from -65 to 200 °C, it ensures reliable performance in various electronic circuits.

Median Price

$0.044

Lifecycle Status

Suppliers In-Stock

30

In-Stock Inventory

1k+

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Adafruit Industries

USA . 100 parts In-Stock

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Future Electronics

Canada . 45,000 parts In-Stock

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Rochester

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DigiKey

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Element14

Singapore . 3,588 parts In-Stock

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Digiode

USA . 3,768 parts In-Stock

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Nova Conductors

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Component Electronics Inc.

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

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PC Components Company LLC

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Atlantic Semiconductor

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Semicontronic

India . 95,988 parts In-Stock

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Ampacity Inc.

Singapore . 84,188 parts In-Stock

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Component Stockers USA

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Argo Parts USA

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Continental Prestige Electronics

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Modulus Dynamics

Lithuania . 700 parts In-Stock

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Aztec Data Supply Inc.

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Robosynatics

Brazil . 350 parts In-Stock

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Lucentia Tech

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UHIMA Technologies

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Kulean Microsystems

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Overview

Unlock the power of reliable and efficient electronics with the 1N5239BT/R Zener Diode by NXP Semiconductors. Crafted with precision and quality, this diode ensures consistent performance in a wide range of applications. From voltage regulation to signal conditioning, this essential component offers unparalleled value and benefits to customers seeking superior quality and stability in their electronic devices. Trust NXP Semiconductors for innovative solutions that drive your projects forward.

Feature Benefit Bullets

Package Body Material: GLASS

Glass material provides better thermal conductivity and insulation, ensuring reliable performance and durability.

Working Test Current: 20 mA

Higher working test current allows for greater efficiency and stability in various electronic circuits.

Maximum Reverse Current: 3 uA

Low maximum reverse current ensures minimal leakage and improved overall circuit performance.

Maximum Voltage Tolerance: 5 %

Narrow voltage tolerance of 5% ensures precise voltage regulation in the circuit.

Maximum Operating Temperature: 200 °C

Wide temperature range of -65 to 200°C allows for reliable operation in extreme conditions.

Maximum Power Dissipation: 0.4 W

High maximum power dissipation of 0.4 W ensures efficient heat dissipation and prevents overheating.

Nominal Reference Voltage: 9.1 V

The nominal reference voltage of 9.1 V provides accurate voltage regulation in the circuit.

Diode Element Material: SILICON

Silicon material offers high thermal stability and low forward voltage drop, making it ideal for Zener diode applications.

Technical Specifications

Zener Diodes 1N5239BT/R attributes and parameters. Explore more Zener Diodes devices from NXP Semiconductors

Specs

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

JEDEC-95 Code:

DO-35

JESD-30 Code:

O-LALF-W2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.4 W

Qualification:

Not Qualified

Nominal Reference Voltage:

9.1 V

Maximum Reverse Current:

3 uA

Surface Mount:

NO

Technology:

ZENER

Terminal Form:

Terminal Position:

Maximum Voltage Temperature Coefficient:

6.188 mV/Cel

Maximum Voltage Tolerance:

5 %

Working Test Current:

20 mA

Trade Compliance

1N5239BT/R Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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