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SZNZ3F10VT1G

Onsemi

SZNZ3F10VT1G by Onsemi

SZNZ3F10VT1G by Onsemi is a Zener diode with 10V nominal reference voltage, 6% max voltage tolerance, and 5mA test current. It is ideal for automotive applications due to AEC-Q101 standard compliance and unidirectional polarity. This small outline diode operates b/w -65 °C to 150°C, making it suitable for various temperature conditions.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Vyrian

USA . 6,733 parts In-Stock

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Digiode

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AZTECH Wire

Italy . 169 parts In-Stock

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$19.220

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SupplyDigital Components

Austria . 5,744 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 5,563 parts In-Stock

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Problanco Electronics

Mexico . 5,381 parts In-Stock

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TANS Electronics

Latvia . 4,571 parts In-Stock

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Kulean Microsystems

USA . 2,267 parts In-Stock

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Corphita

USA . 1,750 parts In-Stock

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UHIMA Technologies

Türkiye . 821 parts In-Stock

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Corohmni

South Africa . 498 parts In-Stock

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Overview

Experience the top-notch quality and reliability of the SZNZ3F10VT1G Zener Diode by Onsemi. This high-performance component is designed to meet the demanding needs of various applications, offering customers unmatched value and benefits. With a wide operating temperature range, precise voltage tolerance, and excellent power dissipation capabilities, this Zener diode ensures consistent and stable performance in any environment. Trust Onsemi's reputation for excellence and innovation, and elevate your electronic designs with the SZNZ3F10VT1G today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy package provides durability and protection for the zener diode, making it suitable for various environmental conditions.

Working Test Current: 5 mA

With a working test current of 5 mA, this zener diode can reliably regulate voltage within the specified range.

Surface Mount: YES

Being surface mountable allows for easy installation and integration on circuit boards, making it space-efficient.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150 °C, this zener diode can withstand elevated temperatures without compromising performance.

Maximum Power Dissipation: 0.8 W

The maximum power dissipation of 0.8W ensures that the zener diode can handle power spikes and fluctuations without getting damaged.

Nominal Reference Voltage: 10 V

The nominal reference voltage of 10V indicates the voltage at which the zener diode will regulate and maintain a stable output.

Technical Specifications

Zener Diodes SZNZ3F10VT1G attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

JESD-30 Code:

R-PDSO-F2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.8 W

Reference Standard:

AEC-Q101

Nominal Reference Voltage:

10 V

Surface Mount:

YES

Technology:

ZENER

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Maximum Voltage Tolerance:

6 %

Working Test Current:

5 mA

Trade Compliance

SZNZ3F10VT1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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