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SZNZ3F9V1T1G

Onsemi

SZNZ3F9V1T1G by Onsemi

The Onsemi SZNZ3F9V1T1G Zener Diode has a nominal reference voltage of 9.1V, max power dissipation of 0.8W, and operates in temperatures from -65 to 150 °C. It is ideal for applications requiring precise voltage regulation in automotive electronics, with AEC-Q101 certification ensuring high quality and reliability.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 6,006 parts In-Stock

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Digiode

USA . 753 parts In-Stock

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AZTECH Wire

Italy . 53 parts In-Stock

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$13.530

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53

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TANS Electronics

Latvia . 7,991 parts In-Stock

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Kulean Microsystems

USA . 7,511 parts In-Stock

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Problanco Electronics

Mexico . 4,159 parts In-Stock

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SupplyDigital Components

Austria . 3,858 parts In-Stock

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Corphita

USA . 1,572 parts In-Stock

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Corohmni

South Africa . 281 parts In-Stock

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UHIMA Technologies

Türkiye . 161 parts In-Stock

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Overview

Unlock the power of precision with the SZNZ3F9V1T1G Zener Diode by Onsemi. Manufactured with top-quality materials and cutting-edge technology, this diode offers unparalleled performance and reliability. Ideal for a wide range of applications, from automotive to industrial electronics, this diode ensures a stable voltage output, protecting your sensitive components. Say goodbye to voltage fluctuations and hello to seamless operation with the SZNZ3F9V1T1G. Choose Onsemi for superior quality and exceptional value.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body makes the zener diode lightweight and durable.

Working Test Current: 5 mA

The low working test current of 5 mA ensures efficient performance and reliability of the zener diode.

Surface Mount: YES

The surface mount feature allows for easy and convenient installation of the zener diode on a PCB.

Maximum Voltage Tolerance: 6.08 %

The tight maximum voltage tolerance of 6.08% ensures accurate voltage regulation in various applications.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150 °C makes this zener diode suitable for a wide range of temperature environments.

Nominal Reference Voltage: 9.1 V

The nominal reference voltage of 9.1V ensures precise voltage regulation and stability in electronic circuits.

Technical Specifications

Zener Diodes SZNZ3F9V1T1G attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

JESD-30 Code:

R-PDSO-F2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.8 W

Reference Standard:

AEC-Q101

Nominal Reference Voltage:

9.1 V

Surface Mount:

YES

Technology:

ZENER

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Maximum Voltage Tolerance:

6.08 %

Working Test Current:

5 mA

Trade Compliance

SZNZ3F9V1T1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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